Room temperature colossal magnetoresistance in nanocrystalline La0.67Sr0.33MnO3 sputtered thin films

González, O.J.; Bistue, G.; Castaño, E.; Gracia, F.J.

doi:10.1016/s0304-8853(00)00534-5

Cited by 42 publications

(10 citation statements)

References 20 publications

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“…For example, the present ultrathin film exhibits ⌬͑H͒ / of −22%, −33%, and −36% at T = 300 K in a field of 3, 4.5, and 5 T, respectively. For comparison, there are reports of ⌬͑H͒ / at T = 300 K of −11% in a T MI = 355 K La 0.67 Sr 0.33 MnO 3 film at H =3 T, 26 −13% in a T MI = 230 K La 0.8 Sr 0.2 MnO 3 film at H = 4.5 T, 27 and −23% in a T MI = 250 K La 0.7 Ca 0.3 MnO 3 film at H =5 T. 28 We summarized these results in Table I.…”

Section: Resultsmentioning

confidence: 99%

Metal-insulator transition above room temperature in maximum colossal magnetoresistance manganite thin films

et al. 2005

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It has been suggested that the maximum magnitude of colossal magnetoresistance occurs in mixed-valent manganites with a tolerance factor t = 0.96 ͓Zhou, Archibald, and Goodenough, Nature ͑London͒ 381, 770 ͑1996͔͒. However, at t Ϸ 0.96 most manganites have relatively low values of the metal-insulator transition temperature T MI ͑ϳ60-150 K͒. Here, we report that a 50 Å La 0.9 Sr 0.1 MnO 3 thin film with t = 0.96 grown on a ͑100͒ SrTiO 3 substrate has a metal-insulator transition above room temperature, which represents a doubling of T MI compared with its value in the bulk material. We show that this spectacular increase of T MI is a result of the epitaxially compressive strain-induced reduction of the Jahn-Teller distortion.

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Section: Resultsmentioning

confidence: 99%

Metal-insulator transition above room temperature in maximum colossal magnetoresistance manganite thin films

et al. 2005

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“…In addition, it has also been shown that in-situ 16,95 or ex-situ 22,31,32,96,97 oxygen annealings is necessary to obtain the optimized properties. In particular, the postannealing of the films can lead to significant modification of the oxygen content and optimizes the physical properties 29,98,99 such as T IM 46 , T C and the CMR effect 1,3,5 .…”

Section: Deposition Procedures Structure and Propertiesmentioning

confidence: 99%

Colossal-magnetoresistive manganite thin films

Prellier

Lecoeur

Mercey

2001

J. Phys.: Condens. Matter

257

227

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Mixed-valence perovskite manganites (Re 1−x A x MnO 3 where Re=rare earth, A=alkaline earth) provide a unique opportunity to study the relationships between the structure and the magnetotransport properties due to an interplay among charge carriers, magnetic coupling, orbital ordering and structural distortion. This makes these compounds very exciting from both the basic research and from the technological view point. As the technology pursued with these materials requires film growth, extensive studies have been made on materials synthesis, structural and physical characterization and device fabrication. In this article, the results of the different experimental techniques and the effects of the deposition procedure of the manganite thin films are first reviewed. Second, the relation between the structural and the physical properties mentioned, and the influence of strains discussed. Finally, possible applications of manganite thin films for spin electronics are presented. *

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“…9 shows the output signal as a function of the magnetic field with a permanent NdFeB attached to the rotary axis for an input voltage of 5 V. The period of 360 and a peak-to-peak voltage of approximately 450 mV can be seen clearly. The magnetic bridge sensitivity can be written as function of the magnetoresistance value [9] as shown…”

Section: Resultsmentioning

confidence: 99%

High Temperature Circular Position Sensor Based on a Giant Magnetoresistance Nanogranular<tex>$hbox Ag_rm x$</tex><tex>$hbox Co_1-rm x$</tex>Alloy

2004

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A new circular position sensor based on giant magnetoresistances has been developed. The sensing film is an AgCo nanogranular thin film patterned in a circular Wheatstone bridge configuration. This alloy shows a high magnetoresistance (8%) at room temperature within the field generated by an NdFeB permanent magnet that provides a sensitivity of 440 V V ( ). The operational temperature range of this sensor is 40 C + 120 C, although the magnetic film tolerates higher temperatures up to 200 C. These parameters and the contactlessless way of sensing make this device appropriate for automotive applications. The developed sensor presents excellent characteristics for life, since it is not sensitive to pollution; it is frictionless and does not present any type of electrical noise generated by contacts.

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Room temperature colossal magnetoresistance in nanocrystalline La0.67Sr0.33MnO3 sputtered thin films

Cited by 42 publications

References 20 publications

Metal-insulator transition above room temperature in maximum colossal magnetoresistance manganite thin films

Metal-insulator transition above room temperature in maximum colossal magnetoresistance manganite thin films

Colossal-magnetoresistive manganite thin films

High Temperature Circular Position Sensor Based on a Giant Magnetoresistance Nanogranular<tex>$hbox Ag_rm x$</tex><tex>$hbox Co_1-rm x$</tex>Alloy

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Room temperature colossal magnetoresistance in nanocrystalline La0.67Sr0.33MnO3 sputtered thin films

Cited by 42 publications

References 20 publications

Metal-insulator transition above room temperature in maximum colossal magnetoresistance manganite thin films

Metal-insulator transition above room temperature in maximum colossal magnetoresistance manganite thin films

Colossal-magnetoresistive manganite thin films

High Temperature Circular Position Sensor Based on a Giant Magnetoresistance Nanogranular&lt;tex&gt;$hbox Ag_rm x$&lt;/tex&gt;&lt;tex&gt;$hbox Co_1-rm x$&lt;/tex&gt;Alloy

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About

High Temperature Circular Position Sensor Based on a Giant Magnetoresistance Nanogranular<tex>$hbox Ag_rm x$</tex><tex>$hbox Co_1-rm x$</tex>Alloy