Room-temperature compound semiconductor radiation detectors

McGregor, Douglas S.; Hermon, H.

doi:10.1016/s0168-9002(97)00620-7

Cited by 226 publications

(120 citation statements)

References 277 publications

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“…There is no system in the market based on the direct method yet, mainly due to problems in the development of the photoconductors as thin films. A compromise between high atomic number semiconductor materials, thin film deposition technique and final photoelectric properties must be optimized [6].…”

Section: Introductionmentioning

confidence: 99%

Stoichiometry, surface and structural characterization of lead iodide thin films

Condeles¹,

Lofrano²,

Rosolen³

et al. 2006

Braz. J. Phys.

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In this work we present the structural properties and stoichiometry analysis of thin films of lead iodide (PbI 2 ). This material is a very promising semiconductor material for the development of X-ray detectors in digital medical imaging. An alternative deposition method called Spray Pyrolysis was used. We discuss the main advantages and limitations of the deposition process comparing three different starting material powders. Extra iodine atmosphere during deposition and the effect of post-deposition thermal treatment is also discussed. The structural properties were studied by X-ray diffraction, Atomic Force Microscopy (AFM), Scanning Electronic Microscopy (SEM) and stoichiometry analysis were performed using Energy Dispersive Spectroscopy (EDS).

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Section: Introductionmentioning

confidence: 99%

Stoichiometry, surface and structural characterization of lead iodide thin films

Condeles¹,

Lofrano²,

Rosolen³

et al. 2006

Braz. J. Phys.

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“…The decrease in both the splitting and the band-gap energy indicates that the strain is relaxed to some extent with increasing the film thickness. [1][2][3][4][5][6][7][8][9][10], in which the lattice mismatch is reduced to 16 and 3% along the [1][2][3][4][5][6][7][8][9][10] and directions, respectively. The domains are compressed in both directions [6,16], which is different from the case of CdTe grown on GaAs(001) [17].…”

Section: Resultsmentioning

confidence: 99%

“…Unlike CdTe films grown on Si(100), the CdTe domains in the CdTe(111) GaAs(001) films are compressed along the [1][2][3][4][5][6][7][8][9][10] direction while extended along the [110] direction [12]. Furthermore, CdTe's thermal expansion coefficient (4.8 × 10 −6 /K) is smaller than GaAs (6.0 × 10 −6 /K).…”

Section: Cdte Films Grown On Gaas(100) Substratesmentioning

confidence: 99%

Strain relaxation of CdTe films growing on lattice-mismatched substrates

Walukiewicz

et al. 2009

Appl. Phys. A

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We have deposited CdTe films by laser-assisted epitaxy approach and investigated the influence of substrate and film thickness on the film properties. Grown on Si(001), GaAs(001), and quartz substrates; the CdTe films exhibit preferential orientation along the cubic CdTe (111) direction. When the films are thin (<500 nm), a blueshift of the band gap and splitting of valence bands were observed. These results are attributed to the existence of residual strains induced by mismatch of the film lattice constant with that of the substrate, and by their difference in thermal expansion coefficients. The bulk band-gap energy of 1.5 eV was achieved on the surface of thick CdTe films grown on Si(001) substrate, indicating that strain was almost completely relaxed in this case. Our results demonstrate that by a proper selection of substrate and film thickness it is possible to grow film semiconductors with band gap approaching those of bulk crystals.

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“…The proposed research plan for the remainder of the project as described in Phase I progress report has been modified by including the following stages in the current research plan: (1) synthesis of starting material from aqueous solutions of potassium iodide (KI) and mercuric chloride (HgCl 2 ), and (2) vapor growth of single crystals in vertical furnaces (or commonly known as the "EG&G method"). In addition, new equipment has been acquired to upgrade previously employed equipment and systems.…”

Section: Experimental Arrangements and Installationsmentioning

confidence: 99%

“…Additionally, the elements comprising the material have high atomic numbers, being 53 for iodine and 80 for mercury, important physical attributes that significantly increase the gamma-ray absorption probability over other semiconductor materials that have been traditionally used, such as Ge and Si. For instance, a piece of HgI 2 only 2 mm thick will absorb the same fraction of 100 keV gamma rays as will a 2 cm thick piece of Ge [1].…”

Section: Introductionmentioning

confidence: 99%

Horizontal Ampoule Growth and Characterization of Mercuric Iodide at Controlled Gas Pressures for X-Ray and Gamma Ray Spectrometers

Ariesanti¹

2004

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Room-temperature compound semiconductor radiation detectors

Cited by 226 publications

References 277 publications

Stoichiometry, surface and structural characterization of lead iodide thin films

Stoichiometry, surface and structural characterization of lead iodide thin films

Strain relaxation of CdTe films growing on lattice-mismatched substrates

Horizontal Ampoule Growth and Characterization of Mercuric Iodide at Controlled Gas Pressures for X-Ray and Gamma Ray Spectrometers

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