Room-temperature continuous-wave lasing in GaN/InGaN microdisks

Tamboli, Adele C.; Haberer, Elaine D.; Sharma, Rajat; Lee, Kwan H.; Nakamura, Shuji; Hu, Evelyn L.

doi:10.1038/nphoton.2006.52

Cited by 288 publications

(220 citation statements)

References 14 publications

Supporting

Mentioning

209

Contrasting

Order By: Relevance

“…Compared with the TE 1,7 mode on the higher energy side (1406.2 nm), the slope efficiency of the TE 1,6 mode (1546.9 nm) is larger with a higher output intensity under the same pumping condition, suggesting (1) higher capture efficiency in larger QDs, 27 and (2) reabsorption of higher energy photons before coupling to cavity modes. 28 Figures 4(c) and 4(d) highlight the lasing peak wavelengths and thresholds of these two modes as a function of substrate temperature, respectively. First, the lasing wavelengths redshift by 0.07-0.09 nm/ C in the temperature range of 20-60 C for both modes, resulting from the InAs bandgap shrinkage and temperature-induced cavity effective refractive index change.…”

Section: -3mentioning

confidence: 99%

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Shi

Zhu

et al. 2017

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

Miniaturized laser sources can benefit a wide variety of applications ranging from on-chip optical communications and data processing, to biological sensing. There is a tremendous interest in integrating these lasers with rapidly advancing silicon photonics, aiming to provide the combined strength of the optoelectronic integrated circuits and existing large-volume, low-cost silicon-based manufacturing foundries. Using III-V quantum dots as the active medium has been proven to lower power consumption and improve device temperature stability. Here, we demonstrate room-temperature InAs/InAlGaAs quantum-dot subwavelength microdisk lasers epitaxially grown on (001) Si, with a lasing wavelength of 1563 nm, an ultralow-threshold of 2.73 μW, and lasing up to 60 °C under pulsed optical pumping. This result unambiguously offers a promising path towards large-scale integration of cost-effective and energy-efficient silicon-based long-wavelength lasers.

show abstract

Section: -3mentioning

confidence: 99%

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Shi

Zhu

et al. 2017

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

“…7,8 However, the superior optical confinement capabilities of GaN WGM microcavities are invariably weakened by optical leakage through its transparent sapphire substrate. Recently, GaN-based undercut two-dimensional (2D) WGM microdisk lasers fabricated through the removal of sacrificial layers embedded within the device structure by photoelectrochemical (PEC) or selective wet-etching [9][10][11] have been reported to effectively reduce such losses. Similar undercut microdisk structures have also been demonstrated by controlled wet-etch removal of the underlying Si substrate using GaN-on-Si materials.…”

mentioning

confidence: 99%

GaN hemispherical micro-cavities

Zhang

Cong

Wang

et al. 2016

Applied Physics Letters

View full text Add to dashboard Cite

GaN-based micro-dome optical cavities supported on Si pedestals have been demonstrated by dry etching through gradually shrinking microspheres followed by wet-etch undercutting. Optically pumped whispering-gallery modes (WGMs) have been observed in the near-ultraviolet within the mushroom-like cavities, which do not support Fabry-Pérot resonances. The WGMs blue-shift monotonously as the excitation energies are around the lasing threshold. Concurrently, the mode-hopping effect is observed as the gain spectrum red-shifts under higher excitations. As the excitation energy density exceeds ∼15.1 mJ/cm2, amplified spontaneous emission followed by optical lasing is attained at room temperature, evident from a super-linear increase in emission intensity together with linewidth reduction to ∼0.7 nm for the dominant WGM. Optical behaviors within these WGM microcavities are further investigated using numerical computations and three-dimensional finite-difference time-domain simulations.

show abstract

“…In recent years, semiconductor microdisk cavities have attracted a lot of attention for applications in photonic integrated circuits due to their promising and versatile optical functions, for instance, lasers [1][2][3][4][5], modulators [6][7][8] and sensors [9][10][11][12]. In addition, the optical curvature sensor had been studied widely with the long period fiber grating system [13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Compact optical curvature sensor with a flexible microdisk laser on a polymer substrate

Shih¹,

Hsu

Kunag

et al. 2009

Opt. Lett.

View full text Add to dashboard Cite

In this paper, a chip-scale compact optical curvature sensor was demonstrated. It consists of a low threshold InGaAsP microdisk laser on a flexible polydimethylsiloxane polymer substrate. The curvature dependence of lasing wavelength was characterized by bending the cavity at different bending radii. The measurements showed that the lasing wavelength decreases monotonously with an increasing bending curvature. A good agreement between experiment and three-dimensional finite-difference time-domain simulation was also obtained. The sensitivity of the compact device to the bending curvature is -23.7 nm/mm form the experiment.

show abstract

Room-temperature continuous-wave lasing in GaN/InGaN microdisks

Cited by 288 publications

References 14 publications

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

GaN hemispherical micro-cavities

Compact optical curvature sensor with a flexible microdisk laser on a polymer substrate

Contact Info

Product

Resources

About