Room temperature continuous-wave operation of buried ridge stripe lasers using InAs-InP (100) quantum dots as active core

Lelarge, F.; Rousseau, B.; Dagens, B.; Poingt, F.; Pommereau, F.; Accard, A.

doi:10.1109/lpt.2005.848279

Cited by 89 publications

(42 citation statements)

References 10 publications

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“…The optical feedback dynamics of the GS laser are first investigated. While bias conditions of 1.5×, 2.5× and 3×I th (25,33 and 50 mA resp.) were considered, the GS laser remains stable for the whole range of currents and feedback strengths studied, only a small red-shift of the FP modes was observed with no sign of spectral broadening.…”

confidence: 99%

“…The red-shift due to thermal effects, measured by varying the pump current right above threshold, was subtracted from the blue-shift measured below threshold to only consider the refractive index variation due to changes in carrier density. 33 The below-threshold LEF spectral variation ranges from 0.25 to 1.0 for the GS laser (red) and from 0.5 to 1.5 for the ES one (blue). At the gain peak, LEF is found to be of 0.5 for the ES laser and around 1 for the GS laser.…”

confidence: 99%

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Multimode optical feedback dynamics of InAs/GaAs quantum-dot lasers emitting on different lasing states

et al. 2016

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Quantum dot lasers are envisioned to be the next generation of optical transmitters used for short-reach communication links, owing to their low threshold current and high temperature operation. However, in a context of steady increase in both speed and reach, quantum dot lasers emitting on their upper energy levels have been recently of greater interest as they are touted for their faster modulation dynamics. This work aims at further evaluating the potential impact of such lasers in communication links by characterizing their long-delay optical feedback responses as well as the role of the lasing states on the multimode dynamics of InAs/GaAs quantum-dot Fabry-Perot devices sharing the same design. Results unveil that the excited-state laser shows a much larger sensitivity to optical feedback, with a more complex route to chaos, and a first destabilization point occurring at lower feedback strengths than for a comparable ground-state laser, which remains almost unaffected.

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confidence: 99%

Multimode optical feedback dynamics of InAs/GaAs quantum-dot lasers emitting on different lasing states

et al. 2016

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“…The first demonstration of the electrically injected InAs/InGaAsP/(100)-InP Qdots laser at low temperature (77 K) was reported on CBE system [118] followed by room temperature operation in both pulsed [119] and CW [120,121] Benefiting from the optimized MOCVD growth process, including reduced As flow rate during Qdots growth and utilization of GaAs interlayer, the Qdots uniformity and emission in a multi-stack structure was maintained due to suppression of As/P exchange. On the other hand, MBE grown optimized Qdots laser showed a threshold current density of 790 A/cm 2 (158 A/cm 2 per layer) [71], large temperature stability with T 0 of 69 K (20-70ºC) [123], high wavelength stability of 0.08 nm/K (80-310 K) [124], and lasing around ~1.55 µ m to ~1.65µm.…”

Section: Inas/ingaasp Materials Systemmentioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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“…From Figure 2, the modal gain of the QD laser was estimated to be ~29 cm −1 , (i.e., 2.9 cm −1 per QD layer on average). This value is lower than typical (InAs) type I QDs emitting in the near-infrared range which is in the order of 10 cm −1 [13,14], but is close to that of type II QWs emitting at a similar wavelength [12]. The relatively lower modal gain from type II structures is closely related to the large spatial separation between electrons and holes compared with type I structures, which results in a much smaller electron-hole wave function overlap.…”

Section: Gain From Insb Qdsmentioning

confidence: 57%

Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers

Zhuang

Krier

2015

Photonics

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Abstract:In this work, we improved the performance of mid-infrared type II InSb/InAs quantum dot (QD) laser diodes by incorporating a lattice-matched p-InAsSbP cladding layer. The resulting devices exhibited emission around 3.1 µm and operated up to 120 K in pulsed mode, which is the highest working temperature for this type of QD laser. The modal gain was estimated to be 2.9 cm −1 per QD layer. A large blue shift (~150 nm) was observed in the spontaneous emission spectrum below threshold due to charging effects. Because of the QD size distribution, only a small fraction of QDs achieve threshold at the same injection level at 4 K. Carrier leakage from the waveguide into the cladding layers was found to be the main reason for the high threshold current at higher temperatures.

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Room temperature continuous-wave operation of buried ridge stripe lasers using InAs-InP (100) quantum dots as active core

Cited by 89 publications

References 10 publications

Multimode optical feedback dynamics of InAs/GaAs quantum-dot lasers emitting on different lasing states

Multimode optical feedback dynamics of InAs/GaAs quantum-dot lasers emitting on different lasing states

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers

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