Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ m

Abstract

Room-temperature cw operation has been achieved for stripe-geometry double-heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm. The heterostructures were grown by liquid-phase epitaxy on melt-grown InP substrates, and stripes were defined by using proton bombardment to produce high-resistance current-confining regions.

The lasers behind the communications revolution

“…The most attractive material system for this "long-wavelength" range, which dominates the long distance communications industry today, is the alloy In 1-x Ga x As y P 1-y latticematched to InP substrates. 10,11 The In 1-x Ga x As y P 1-y alloys can be grown by LPE in a very similar fashion to Al x Ga 1-x As alloys, using In metal melts with dissolved GaAs, InAs, InP, trace dopants, and InP substrates. The typical growth temperature is somewhat lower (650°C) due to the decomposition of P-containing compounds such as InP at high temperatures.…”

Role of Rare-Earth Elements in the Technology of III-V Semiconductors Prepared by Liquid Phase Epitaxy

“…InP itself had not received much interest until it was used as a substrate for InGaAsP-based LEDs and lasers (Hsieh et al, 1976) and InGaAs transport devices (Takeda et al, 1976).…”

Planar InAs photodiodes fabricated using He ion implantation

“…Multiple implantation energies and doses were used to create a flat damage distribution of approximately 1.7% up to a depth of just over 2 µm. In total four implantations were used to achieve this with the following conditions 1) 36 keV with a dose of 1.3x10 13 , 2) 120 keV at 7.4x10 13 , 3) 300 keV at 2.04x10 14 and 4) 600 keV at 4.62x10 14 ions/cm 2 . All the implants were performed, at the Surrey Ion Beam Centre, at room temperature and with the wafer at an angle of 7° to minimize channeling of the implanted ions.…”

“…This technique has previously been used in wider bandgap semiconductors such as GaAs and InP to form planar devices and define device active regions in the fabrication of HEMTs [11], IMPATT diodes [12] and in defining buried heterostructures in laser diodes [13]. A potential advantage to using ion implantation over a diffusion based technique is the greater flexibility in the species to be implanted, as well as potential to achieve greater depths with good uniformity.…”