Room temperature CW tunable green upconversion holmium fibre laser

Allain, J.Y.; Monerie, M.; Poignant, H.

doi:10.1049/el:19900174

Cited by 180 publications

(41 citation statements)

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“…Output power of 0.5 mW at 412 nm was produced for 320 mW of pump power at 590 nm [137]. In 1990, Allain et al [175] reported a room-temperature CW tunable green upconversion Ho 3+ -doped ZBLAN fiber laser between 540 nm and 553 nm for the first time. The pump source was a krypton-ion laser at 647.1 nm.…”

Section: Upconversion Ndmentioning

confidence: 99%

High-Power ZBLAN Glass Fiber Lasers: Review and Prospect

Zhu

Peyghambarian

2010

Advances in OptoElectronics

290

110

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-NaF), considered as the most stable heavy metal fluoride glass and the excellent host for rare-earth ions, has been extensively used for efficient and compact ultraviolet, visible, and infrared fiber lasers due to its low intrinsic loss, wide transparency window, and small phonon energy. In this paper, the historical progress and the properties of fluoride glasses and the fabrication of ZBLAN fibers are briefly described. Advances of infrared, upconversion, and supercontinuum ZBLAN fiber lasers are addressed in detail. Finally, constraints on the power scaling of ZBLAN fiber lasers are analyzed and discussed. ZBLAN fiber lasers are showing promise of generating high-power emissions covering from ultraviolet to mid-infrared considering the recent advances in newly designed optical fibers, beam-shaped high-power pump diodes, beam combining techniques, and heatdissipating technology.

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Section: Upconversion Ndmentioning

confidence: 99%

High-Power ZBLAN Glass Fiber Lasers: Review and Prospect

Zhu

Peyghambarian

2010

Advances in OptoElectronics

290

110

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“…A large effort has been put into engineering Er-doped glasses with minimal phonon energies and hence long excitedstate lifetimes. Indeed, green upconversion lasing has been observed in ZrF 4 -BaF 2 -LaF 3 -AlF 3 -NaF (ZBLAN) compound glasses [7][8][9], where Klitzing et al [10] have reported a green upconversion laser with a threshold power as low as 30 W using a ZBLAN microsphere as the resonant cavity.The ZBLAN material, however, is incompatible with Si processing technology. Pure silica, on the other hand, has proven to be an excellent material to fabricate on-chip microcavities [11,12], but so far, the short excited-state manifold lifetime that results from the relatively high phonon energy in silica has precluded the observation of upconversion lasing in such cavities.…”

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confidence: 99%

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confidence: 99%

On-chip green silica upconversion microlaser

et al. 2009

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We demonstrate an erbium-doped silica toroidal microcavity upconversion laser on a silicon chip lasing in the visible spectral range ͑510-580 nm͒. The microcavity is pumped at 1458 nm by a tapered optical fiber coupled to the cavity and the lasing threshold is 690 W. Lasing is observed at room temperature despite the high nonradiative relaxation rates of Er in pure silica that usually precludes upconversion lasing from higher excited states. This is attributed to the very high circulating pump power in the high-Q microcavity ͑Q Ͼ 10 7 ͒. One way to achieve green laser action from an Erdoped material is by using upconversion. Upconversion lasers operate through the excitation of a higherlying state either by absorption of multiple lowerenergy pump photons [5] or by cooperative upconversion due to dipole-dipole interaction between excited ions [6]. Rare-earth-doped glasses are ideal hosts for upconversion lasers due to the relatively long lifetimes of the 4f manifolds. A large effort has been put into engineering Er-doped glasses with minimal phonon energies and hence long excitedstate lifetimes. Indeed, green upconversion lasing has been observed in ZrF 4 -BaF 2 -LaF 3 -AlF 3 -NaF (ZBLAN) compound glasses [7][8][9], where Klitzing et al. [10] have reported a green upconversion laser with a threshold power as low as 30 W using a ZBLAN microsphere as the resonant cavity.The ZBLAN material, however, is incompatible with Si processing technology. Pure silica, on the other hand, has proven to be an excellent material to fabricate on-chip microcavities [11,12], but so far, the short excited-state manifold lifetime that results from the relatively high phonon energy in silica has precluded the observation of upconversion lasing in such cavities. In this Letter, we demonstrate a way to circumvent this limitation of the excited-state transition level in a silica host by using a resonant cavity with an extremely high quality factor ͑Q Ͼ 10 7 ͒. The resonator device is fabricated on a silicon wafer enabling integration of the green lasing emission with optoelectronic functionality on the same chip.Er-doped silica microcavities were fabricated on Si substrates using a sol-gel process [11,12]. The typical toroid major and minor diameters measured 40 and 4 m, respectively. The inset of Fig. 1(a) shows a scanning electron microscope image of an Er-doped toroidal microcavity. The typical Er concentration in the cavity is estimated to be 0.1-0.5 at. %. The typical intrinsic quality factor of these Er-doped cavities [4] is well above 10 7 . For a toroidal cavity with an intrinsic quality factor of Q =5ϫ 10 7 a pump power of 10 mW coupled into the cavity will build up a circulating power as high as 1 kW. This circulating power is concentrated into a cross sectional area of only several square micrometers, giving rise to an intensity that can exceed 1 GW/ cm 2 . As will be demonstrated below, such high intracavity intensities are sufficient to create population inversion of higher-lying excited states of Er 3+ , which is otherwise d...

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“…At room temperature, visible laser operation has so far only been demonstrated on the transition 5 F 4 , 5 S 2 → 5 I 7 in the deep red spectral region with the first results being reported by Chicklis et al [15]. Green laser emission of Ho 3+ -doped gain media at room temperature was so far only achieved in Ho 3+ -doped ZBLAN fibers [16,17].…”

Section: Introductionmentioning

confidence: 99%

Prospects of Holmium-doped fluorides as gain media for visible solid state lasers

Reichert¹,

Moglia²,

Metz³

et al. 2014

Opt. Mater. Express

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Abstract:In this paper we report on the suitability of Ho 3+ :LiLuF 4 and Ho 3+ :LaF 3 as active media for solid state lasers emitting in the green spectral region. The ground state absorption spectra were measured and employed to calculate the emission cross section spectra via the reciprocity method. These allowed to derive the gain characteristics for various inversion ratios. The decay dynamics of the 5 F 4 , 5 S 2 multiplet, which would act as upper laser level, were investigated to estimate the quantum efficiency. Measurements of the excited state absorption were conducted which showed that stimulated emission is the dominating effect around 550 nm. Laser operation was demonstrated in the green spectral region by employing Ho 3+ :LaF 3 as gain medium. Laser oscillation occurred in a self-pulsed regime with a maximum average output power of 7.7 mW, a repetition rate of 5.3 kHz, and a pulse duration of 1.6 µs. To the best of our knowledge this constitutes the first green laser emission of a Ho 3+ -doped crystal at room temperature.

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Room temperature CW tunable green upconversion holmium fibre laser

Cited by 180 publications

References 0 publications

High-Power ZBLAN Glass Fiber Lasers: Review and Prospect

High-Power ZBLAN Glass Fiber Lasers: Review and Prospect

On-chip green silica upconversion microlaser

Prospects of Holmium-doped fluorides as gain media for visible solid state lasers

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