“…Vacancy-induced ferromagnetism is a common phenomenon appearing in a wide range of semiconducting materials such as ZnO, − C-implanted ZnO, Mn:ZnO, , ZnS, Mn:ZnS, PbS, TiO 2 , , In 2 O 3 , SnO 2 , and HfO 2 . , In the interest of exploring the magnetic nature of the vacancies and Mn dopant, magnetization ( M ) versus applied magnetic field ( H ) was measured for each sample of the Mn-doped and undoped ZnS and CdS QD thin films at 5 and 300 K, as shown in Figure . At both 5 and 300 K, the undoped ZnS QD thin films exhibit a ferromagnetic hysteresis.…”