Room temperature deposited transparent p-channel CuO thin film transistors

Sanal, K.C.; Vikas, L. S.; Jayaraj, M. K.

doi:10.1016/j.apsusc.2014.01.109

Cited by 76 publications

(39 citation statements)

References 30 publications

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“…Research on Cu 2 O has a long history, and the fabrication of Cu 2 O thin films or nanostructures has been widely reported by various techniques, such as PLD, magnetron sputtering, and thermal oxidation; and chemical routes, such as electrodeposition, spin coating, atomic‐layer deposition, spray coating, molecular‐beam epitaxy, microwave irradiation from a Cu precursor, chemical vapor deposition, and ink printing . A summary of the most promising studies on binary copper oxide thin films is shown in Table 2 .…”

Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

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The development of transparent p-type oxide semiconductors with good performance could be a true enabler for a variety of applications, where transparency, power efficiency and more circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, we review recent developments in materials and devices based on p-type oxide semiconductors, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides and nickel oxides. The crystal and electronic structures of these materials are reviewed, along with approaches to enhance valence band dispersion to reduce effective mass and increase mobility.Strategies to reduce the interfacial defects, off state current, and material instability are discussed. Furthermore, we show that promising progress has been made in the performance of various type of devices based on p-type oxides. For example, transparent oxide-based p-n junction diodes have experienced significantly improved performance, where rectification ratios >10 7 have been achieved. The performances of thin-film transistors and inverters have also been modestly improved. For example, thin-film transistors with field-effect mobilities exceeding 5 cm 2 V -1 s -1 have been reported. In addition, several innovative approaches were developed to fabricate transparent complementary metal oxide semiconductor (CMOS) 2 devices. These approaches include novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains (as high as 120 has been demonstrated).Some progress has also been made in reducing the interfacial defects and off state currents using capping layers, high quality dielectrics and surface treatments. Resistive memory devices and hole transport layer in optoelectronic devices, mostly based on nickel oxide, have made decent progress. Transparent ferroelectric memory devices comprising p-type oxides have also been reported recently showing good hole mobilities (~3.3 cm 2 V -1 s -1 ) and good retention characteristics. This even includes multistate memory devices that show good stability. Nanoscale (e.g. nanowire) devices have now been reported using p-type oxides and do show performance improvements at scaled device geometry. New process developments have been reported, and some p-type oxides can now be deposited using atomic layer deposition and chemical routes, with promising performances. However, despite these recent developments, p-type oxides still lag in performance behind the n-type counterparts, which have entered volume production in the display market. The recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented in this review.

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Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

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“…Candidate p-type oxide semiconductors include copper oxide (CuO x ), tin oxide (SnO x ), and nickel oxide (NiO x ) [3][4][5][6][7]. Among them, copper oxide is a non-toxic, cost-effective material that may be deposited by various techniques such as sputtering, chemical vapor deposition, and even the sol-gel method [8][9][10][11]. As a transition metal, copper oxide may exhibit two different phases, namely cupric oxide (copper (II) oxide, CuO) and cuprous oxide (copper (I) oxide, Cu 2 O).…”

Section: Introductionmentioning

confidence: 99%

A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen

et al. 2019

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In the present study, the effects of nitrogen incorporation on the transition of a p-type copper oxide semiconductor are investigated. The properties of sputtered copper oxide and nitrogen-incorporated copper oxide are evaluated and compared at various nitrogen gas flow rates. The results indicate that the addition of nitrogen results in an increased optical bandgap, accompanied by significantly reduced tail states compared to pristine copper oxide. In addition, X-ray diffraction and X-ray photoelectron spectroscopy reveal that the incorporation of nitrogen stimulates the transition from copper (II) oxide to copper (I) oxide.

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“…The electrodeposited samples were cleaned in distilled water and dried before annealing at 350 °C for 6 h in air. P‐type CuO (70 nm) was deposited over ZNA by RF‐magnetron reactive sputtering . Au electrodes (60 nm) were deposited by thermal evaporation through a shadow mask.…”

Section: Methodsmentioning

confidence: 99%

Vertically aligned ZnO nanorod array/CuO heterojunction for UV detector application

Vikas

Sanal

Jayaraj

et al. 2014

Phys. Status Solidi A

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Vertically aligned ZnO nanorod array (ZNA) was deposited by electrodeposition technique over glass substrate coated with Al doped ZnO (AZO). The photo-luminescence spectrum of the ZNA showed a near band edge emission and deep level emission (DLE). The resolved DLE spectrum indicates the formation of various defect levels within the band gap of ZnO. P-type CuO was deposited on ZNA to form ZNA/CuO heterojunction. The voltage-current (V-I) characteristics show a turn on voltage of 0.65V. The device showed good rectification behavior and a rectification ratio of 50 at 1V. The heterojunction with a device structure AZO/ZNA/CuO/Au showed good response on ultra violet (UV) illumination. The device has stability even after long exposures to atmospheric conditions and UV light.Peer ReviewedPostprint (published version

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Room temperature deposited transparent p-channel CuO thin film transistors

Cited by 76 publications

References 30 publications

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen

Vertically aligned ZnO nanorod array/CuO heterojunction for UV detector application

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