Room temperature deposition of amorphous p-type CuFeO2 and fabrication of CuFeO2/n-Si heterojunction by RF sputtering method

Abstract

Transparent conducting amorphous p-type CuFeO 2 (CFO) thin film was prepared by radio-frequency (RF) magnetron sputtering method at room temperature using polycrystalline CuFeO 2 target. Amorphous structure of as-deposited film was confirmed by XRD. XPS analysis convinced that the chemical state of Cu + and Fe 3+ in the film, and the chemical composition of the thin films is close to the stoichiometry of CuFeO 2 . Surface morphology of the film was analysed by SEM studies. p-type nature and concentration of carriers was investigated by Hall effect measurement. The p-n heterojunction in the structure of Al/n-Si/p-CuFeO 2 /Al showed good rectifying behaviour with a forward and reverse currents ratio of 555 at 2 V. The turn-on voltage and reverse leakage current values were found to be 0.9 V and 4 μA at −2 V. Further, the conduction mechanism of forward bias voltage was controlled by thermionic emission (TE) and trap-space charge limited current (TCLC) mechanisms.

Band gap determination in multi-band-gap CuFeO2 delafossite epitaxial thin film by photoconductivity

“…The band gap results for CuFeO 2 have displayed strong absorption edges determined in the near infrared region ~ 1.2 eV [16][17][18][19][20][21]; absorption in the mid-visible region ~ 2.0 eV [22][23][24][25][26]; and absorption in higher energy, from blue to ultraviolet region ~ 3.0 eV [27][28][29][30][31][32][33][34]. Several groups have also reported multi-band gap results [22,23,25,26].…”

Supercritical foaming of novel poly(ether‐b‐amide) elastomer and compression property characterization

“…Two reasons can be derived from the combination of Zhai's research on TPU foam materials 47 and Dong's research on PEBA. 48,49 When the foams were compressed for the first time, their regularly crystalline superstructures were be destroyed or yielded, since the compressive strain of 50% was relatively large, permanent, and irrecoverable damage to cellular structures could be expected. This phenomenon occurs in E Y and σ s as well, which is named stress softening or Mullins effect.…”

Large-Scale Transparent Photovoltaics for a Sustainable Energy Future: Review of Inorganic Transparent Photovoltaics

“…In the TPVs, the p-n heterojunction is typically prepared using the reactive sputtering technique, and consequently, this review article highlights the optoelectrical properties of the reactivesputtered wide-band-gap metal-oxide films. II compares the optical and electrical properties of these metal oxides along with their deposition parameters [37,39,[47][48][49][50][51][52][53][54][55][56][57][58][59]. Figure 3 presents an energy-level diagram of both the p-type and n-type metal oxides [33,[60][61][62][63][64][65][66].…”