Room temperature deposition of high figure of merit p-type transparent conducting Cu–Zn–S thin films and their application in organic solar cells as an efficient hole transport layer

Jose, Edwin; Mohan, Minu; Namboothiry, Manoj A. G.; Kumar, M.C. Santhosh

doi:10.1016/j.jallcom.2020.154507

Cited by 9 publications

(4 citation statements)

References 57 publications

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“…However, upon incorporation of copper into the films, the electrical measurements were found to be reliable. For all the remaining samples, the conductivity was found to be p-type according to the measured Hall coefficient and these results are in correspondence with other reports found in the literature. ,,,, It is possible to observe that the carrier concentration increases with an increasing copper concentration in the films, going from 10 13 up to 10 21 cm –3 spanning almost 8 orders of magnitude in the studied range. From the behavior of the carrier concentration, an increase of the copper concentration in the cationic solution will not improve the electrical properties because we have reached the maximum that corresponds to covellite deposited by a SILAR methodology.…”

Section: Resultssupporting

confidence: 91%

“…Recent optoelectronic and photovoltaic technology challenges include the finding of the so-called suitable “p-type” transparent conductors (TCs), which are sought-after materials that must possess optical transparency and high electrical conductivity that can further improve the overall efficiency of several electronic devices. − Furthermore, there is a keen interest in materials composed of abundant elements in the Earth’s crust, with low toxicity, and economically synthesized at low temperatures for applications in flexible transparent electronics. ,, …”

Section: Introductionmentioning

confidence: 99%

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Insights into the SILAR Processing of Cu_xZn_1–xS Thin Films via a Chemical, Structural, and Optoelectronic Assessment

Cabrera-German,

Martínez-Gil,

Fuentes-Ríos

et al. 2023

ACS Omega

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Careful analysis of the chemical state of Cu x Zn 1– x S thin films remains an underdeveloped topic although it is key to a better understanding of the phase transformations and the linking between structural and optoelectronic properties needed for tuning the performance of Cu x Zn 1– x S-based next-generation energy devices. Here, we propose a chemical formulation and formation mechanism, providing insights into the successive ionic layer adsorption and reaction (SILAR) processing of Cu x Zn 1– x S, in which the copper concentration directly affects the behavior of the optoelectronic properties. Via chemical, optoelectronic, and structural characterization, including quantitative X-ray photoelectron spectroscopy, we determine that the Cu x Zn 1– x S thin films at low copper concentration are composed of ZnS, metastable Cu x Zn 1– x S, and CuS, where the evidence suggests that a depth compositional gradient exists, which contrasts with homogeneous films reported in the literature. The oxidation states for copper and sulfide species indicate that the films grow following a formation mechanism governed by ionic exchange and diffusion processes. At high copper concentrations, the Cu x Zn 1– x S thin films are covellite CuS that grew on a ZnS seed layer. Hence, this work reiterates that future research related to fine-tuning the application of this material requires a careful analysis of the depth-profile compositional and structural characteristics that can enable high conductivity and transparency.

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Section: Resultssupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Insights into the SILAR Processing of Cu_xZn_1–xS Thin Films via a Chemical, Structural, and Optoelectronic Assessment

Cabrera-German,

Martínez-Gil,

Fuentes-Ríos

et al. 2023

ACS Omega

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“…Due to the decreased ohmic resistance, the device structure ITO/CuS/PTB7:P 71 BM/Al reached a high PCE of 4.32% due to the improved FF of 50.1%. A new room-temperature method known as Successive Ionic Layer Adsorption and Reaction (SILAR) was reported by Jose et al to produce efficient p -type Zn-doped CuS HTLs [ 207 ]. Due to the high conductivity and low light absorption in the visible region, a PCE of 1.87% was obtained with enhanced charge mobility of 1.5 cm 2 V −1 s −1 .…”

Section: Hole-transporting Materials As Htls In Oscsmentioning

confidence: 99%

Recent Advances in Hole-Transporting Layers for Organic Solar Cells

et al. 2022

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Global energy demand is increasing; thus, emerging renewable energy sources, such as organic solar cells (OSCs), are fundamental to mitigate the negative effects of fuel consumption. Within OSC’s advancements, the development of efficient and stable interface materials is essential to achieve high performance, long-term stability, low costs, and broader applicability. Inorganic and nanocarbon-based materials show a suitable work function, tunable optical/electronic properties, stability to the presence of moisture, and facile solution processing, while organic conducting polymers and small molecules have some advantages such as fast and low-cost production, solution process, low energy payback time, light weight, and less adverse environmental impact, making them attractive as hole transporting layers (HTLs) for OSCs. This review looked at the recent progress in metal oxides, metal sulfides, nanocarbon materials, conducting polymers, and small organic molecules as HTLs in OSCs over the past five years. The endeavors in research and technology have optimized the preparation and deposition methods of HTLs. Strategies of doping, composite/hybrid formation, and modifications have also tuned the optical/electrical properties of these materials as HTLs to obtain efficient and stable OSCs. We highlighted the impact of structure, composition, and processing conditions of inorganic and organic materials as HTLs in conventional and inverted OSCs.

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“…Notably, a few studies on sulphide transparent electrodes have been reported, mostly based on copper-based materials. [231,232] These represent some of the very few reports of p-type transparent electrodes fabricated by SILAR, but they go behind the scope of this review. Doped ZnO is one of the most common TCOs synthesized via the SILAR technique.…”

Section: Transparent Electrodesmentioning

confidence: 99%

SILAR Deposition of Metal Oxide Nanostructured Films

Ratnayake

Ren

Colusso

et al. 2021

Small

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Methods for the fabrication of thin films with well controlled structure and properties are of great importance for the development of functional devices for a large range of applications. SILAR, the acronym for Successive Ionic Layer Adsorption and Reaction, is an evolution and combination of two other deposition methods, the Atomic Layer Deposition and Chemical Bath Deposition. Due to a relative simplicity and low cost, this method has gained increasing interest in the scientific community. There are, however, several aspects related to the influence of the many parameters involved, which deserve further deepening. In this review article, the basis of the method, its application to the fabrication of thin films, the importance of experimental parameters, and some recent advances in the application of oxide films are reviewed. At first the fundamental theoretical bases and experimental concepts of SILAR are discussed. Then, the fabrication of chalcogenides and metal oxides is reviewed, with special emphasis to metal oxides, trying to extract general information on the effect of experimental parameters on structural, morphological and functional properties. Finally, recent advances in the application of oxide films prepared by SILAR are described, focusing on supercapacitors, transparent electrodes, solar cells, and photoelectrochemical devices.

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Room temperature deposition of high figure of merit p-type transparent conducting Cu–Zn–S thin films and their application in organic solar cells as an efficient hole transport layer

Cited by 9 publications

References 57 publications

Insights into the SILAR Processing of Cu_xZn_1–xS Thin Films via a Chemical, Structural, and Optoelectronic Assessment

Insights into the SILAR Processing of Cu_xZn_1–xS Thin Films via a Chemical, Structural, and Optoelectronic Assessment

Recent Advances in Hole-Transporting Layers for Organic Solar Cells

SILAR Deposition of Metal Oxide Nanostructured Films

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Room temperature deposition of high figure of merit p-type transparent conducting Cu–Zn–S thin films and their application in organic solar cells as an efficient hole transport layer

Cited by 9 publications

References 57 publications

Insights into the SILAR Processing of CuxZn1–xS Thin Films via a Chemical, Structural, and Optoelectronic Assessment

Insights into the SILAR Processing of CuxZn1–xS Thin Films via a Chemical, Structural, and Optoelectronic Assessment

Recent Advances in Hole-Transporting Layers for Organic Solar Cells

SILAR Deposition of Metal Oxide Nanostructured Films

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Insights into the SILAR Processing of Cu_xZn_1–xS Thin Films via a Chemical, Structural, and Optoelectronic Assessment

Insights into the SILAR Processing of Cu_xZn_1–xS Thin Films via a Chemical, Structural, and Optoelectronic Assessment