Room-temperature deposition of nanocrystalline CuSCN film by the modified successive ionic layer adsorption and reaction method

Gao, Xiangdong; Li, Xiaomin; Yu, Weidong; Qiu, Jijun; Gan, Xueping

doi:10.1016/j.tsf.2008.06.077

Cited by 29 publications

(22 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, by carrying out the DFT calculation with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, Chen et al [22] obtained a value of 3.45 eV which is closer to the experimental values of 3.7-3.9 eV. [11,12,[25][26][27] However, the latter values were mostly obtained via Tauc analysis of the optical absorption spectra assuming a direct band gap (by setting the exponent parameter equal to 2 for the Tauc plot).…”

Section: Electronic Band Structure Of Cuscnmentioning

confidence: 83%

Electronic Properties of Copper(I) Thiocyanate (CuSCN)

Pattanasattayavong

Promarak

Anthopoulos

2017

Adv Elect Materials

View full text Add to dashboard Cite

With the emerging applications of copper(I) thiocyanate (CuSCN) as a transparent and solution-processable hole-transporting semiconductor in numerous opto/electronic devices, fundamental studies that cast light on the charge transport physics are essential as they provide insights critical for further materials and devices performance advancement. The aim of this article is to provide a comprehensive and up-to-date report of the electronic properties of CuSCN with key emphasis on the structure-property relationship. The article is divided into four parts. In the first section, we review recent works on density functional theory calculations of the electronic band structure of hexagonal β-CuSCN. Following, various defects that may contribute to the conductivity of CuSCN are discussed, and newly predicted phases characterized by layered 2-dimesnional-like structures are highlighted. Finally, a summary of recent studies on the band-tail states and hole transport mechanisms in solutiondeposited, polycrystalline CuSCN layers is presented.

show abstract

Section: Electronic Band Structure Of Cuscnmentioning

confidence: 83%

Electronic Properties of Copper(I) Thiocyanate (CuSCN)

Pattanasattayavong

Promarak

Anthopoulos

2017

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

“…For instance, Jaffe et al predicted the existence of an indirect bandgap of 3.5 eV from an electronic band structure model calculated using density functional theory, although absorption measurements performed on CuSCN samples indicated the presence of an indirect bandgap of 3.9 eV [24]. To this end, energies ranging from 3.6 eV to 3.94 eV are often quoted in the literature for various films deposited and characterized by different methods, but data to conclusively determine the nature of the bandgap remains inadequate [26,[31][32][33]. Nevertheless, most reported bandgap values greatly exceed photon energies corresponding to the visible spectral region, indicating that CuSCN is highly optically transparent.…”

Section: Copper(i) Thiocyanatementioning

confidence: 99%

“…Hence, all techniques utilized must involve low temperature and cost-efficient processes ideally performed at atmospheric pressure. A variety of methods, ranging from spray-coating [54,58], to successive ionic layer adsorption and reaction (SILAR) [33], have so far been implemented for the fabrication of CuSCN hole-transport layers (HTLs). However, in-depth analysis of each procedure is beyond the scope of this review.…”

Section: Deposition Of Cuscnmentioning

confidence: 99%

Copper(I) thiocyanate (CuSCN) as a hole-transport material for large-area opto/electronics

Wijeyasinghe

Anthopoulos

2015

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Recent advances in large-area optoelectronics research have demonstrated the tremendous potential of copper(I) thiocyanate (CuSCN) as a universal hole-transport interlayer material for numerous applications, including, transparent thin-film transistors, high-efficiency organic and hybrid organicinorganic photovoltaic cells, and organic light-emitting diodes (OLEDs). CuSCN combines intrinsic hole-transport (p-type) characteristics with a large bandgap (>3.5 eV) which facilitates optical transparency across the visible to near infrared part of the electromagnetic spectrum. Furthermore, CuSCN is readily available from commercial sources while it is inexpensive and can be processed at low-temperatures using solution-based techniques. This unique combination of desirable characteristics makes CuSCN a promising material for application in emerging large-area optoelectronics. In this review article, we outline some important properties of CuSCN and examine its use in the fabrication of potentially low-cost optoelectronic devices. The merits of using CuSCN in numerous emerging applications as an alternative to conventional hole-transport materials are also discussed.

show abstract

“…Based on the transport energy, the carrier transport in the VRH regime can be treated similar to that in the MTR regime, but instead of the mobility edge, the transport now happens at TR E . The mobility is still temperature activated and can also be described with Equation 13. The activation energy scale is now on the order of the characteristic energy of the DOS of the localized states.…”

Section: Hole Transport In Solution-processed Cuscn Layersmentioning

confidence: 99%

“…To this end, recent effort has been focused in developing solution-processing methods to enable the deposition of semiconducting films at low cost and onto large substrates. [7] In this respect, CuSCN can be solution-processed, [11][12][13] and its applications in various opto/electronic devices grown from solution have been demonstrated. [1, 3-5, 8, 14-19] Despite the tremendous promise, however, basic understanding of the electronic properties of CuSCN is still lacking.…”

Section: Introductionmentioning

confidence: 99%