Room-temperature deposition of SiNx using ECR-PECVD for semiconductor microelectronics in lift-off technique

Wiersch, A.; Heedt, C.; Schneiders, S.; Tilders, R.; Buchali, Fred; Kuebart, W.; Prost, W.; Tegude, F.‐J.

doi:10.1016/0022-3093(95)00160-3

Cited by 16 publications

(3 citation statements)

References 8 publications

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“…Several MARK ECR-PECVD) have been developed over the past decades, in order to realize high quality SiN x [5], SiO x [6], or a-SiH layers with a good control of their stress and their optical and electronic properties. These capabilities of depositing passivating SiN x or SiO x films, around 100°C and even at room temperature offer many opportunities to use structured polymer coating on the wafer surfaces and thus to apply a lift-off technique for surface patterned coating [7]. In addition, thanks to a wide range of possible parameters to control the plasma, more or less conformal coatings on the profiled surfaces can be achieved.…”

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confidence: 99%

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Single lithography-step self-aligned fabrication process for Vertical-Cavity Surface-Emitting Lasers

Marigo-Lombart

Arnoult

Mazenq

et al. 2017

Materials Science in Semiconductor Processing

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We demonstrate a self-aligned process to fabricate Vertical-Cavity Surface-Emitting Lasers (VCSEL) which combines, within a single lithographic step the mesa etch, the surface passivation, the opening of the emission window and the top annular metallization. This process flow, based on a double photoresist layer enabling two lift-off steps, offers great advantages such as easy and fast implementation while insuring a perfect alignment between the emitting window, the passivation layer aperture and the metal-ring contact. VCSEL fabrication is drastically simplified and its repeatability improved. Finally, this process can be advantageously applied to other photonic devices such waveguide-ridge lasers, modulators, LED, etc.

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confidence: 99%

“…Later on, undercut resist profiles were successfully applied to lift off Si x N y ECR-PECVD deposited layers, in a very similar way to standard metal lift-off techniques [7]; enabling the lift off of more than 1 µm thick Bragg mirror stacks [12].…”

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confidence: 99%

Single lithography-step self-aligned fabrication process for Vertical-Cavity Surface-Emitting Lasers

Marigo-Lombart

Arnoult

Mazenq

et al. 2017

Materials Science in Semiconductor Processing

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“…The advantages of ECR-CVD are that it can produce high-density plasma of $10 12 cm --3 and SiN x film can be formed at room temperature. Therefore, lift-off technique can be used to pattern the passivation layer [6]. It was expected that this process would be easy and could not damage the device.…”

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confidence: 99%

The Silicon Nitride Film Formed by ECR-CVD for GaN-Based LED Passivation

Chang¹,

Lang²,

Cheng³

2001

phys. stat. sol. (a)

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Most GaN-LED epilayers are grown on sapphire, which is a kind of insulating substrate. From the top view, a GaN-based LED has two bonding pads, one for p-type conduction and the other for n-type conduction. These pads would affect the packaging yield because it is probable to touch the p-type material when a conducting wire is bonded to the n-pad. Besides, the reactive ion-etched sidewall is easily contaminated or adsorbed by moisture when exposed to the air. Consequently, a passivation layer is necessary to isolate these conduction paths. In this paper, we used electron cyclotron resonance chemical vapor deposition (ECR-CVD) to form the silicon nitride (SiN x ) passivation film at room temperature. The film was patterned by lift-off process and the surface of the whole wafer was covered except the bonding pads. After passivation, no distinguishable variation was found in the statistical data of forward voltage and leakage current, but the illumination intensity was raised by at least 6%. The bonding yield and reliability would be increased much. The change of electrostatic discharge (ESD) characteristics was also investigated.

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