Room-temperature deposition of transparent conducting Al-doped ZnO films by RF magnetron sputtering method

Yang, Weifeng; Liu, Zhuguang; Peng, Dong‐Liang; Feng, Zhaochi; Huang, Huolin; Xie, Yannan; Zhang, Wu

doi:10.1016/j.apsusc.2008.12.021

Cited by 203 publications

(70 citation statements)

References 24 publications

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“…ZnO normally has the hexagonal structure with a= 3.25Å and c= 5.12 Å; each Zn atom is tetrahedrally coordinated to four O atoms, where the Zn d-electrons hybridize with the O p-electrons; layers occupied by zinc atoms alternate with layers occupied by oxygen atoms. Several techniques can be used to grow ZnO thin films on variety of substrate (Si, glass, flexible substrate, and sapphire), such as spray pyrolysis, Magnetron sputtering, reactive plasma deposition, metal organic chemical vapor deposition, and pulse laser deposition [1][2][3][4][5].…”

Section: Introductionsmentioning

confidence: 99%

Effect of growth temperature on structural and electronic properties of ZnO thin films

Tahir

Jae

2017

AIP Conference Proceedings

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Abstract.The electronic and structural properties for RF magnetron sputtering deposited ZnO thin films grown on Si substrate was obtained by using X-ray diffraction (XRD) and reflection electron energy loss spectroscopy (REELS). XRD spectra show the intensity of the diffraction peak increases with increasing the growth temperature with (002) is strongest diffraction peak. The particle sizes for (002) are increase from 10.2 nm to 60.2 nm with increasing growth temperature from room temperature to 500 o C, respectively. The band gap of ZnO thin films REELS spectra are 3.1 0.1 eV. The dominant peak from REELS at about 18 eV is ascribed to a bulk Plasmon excitation, which represents the collective oscillation of the valence electrons excited by the incident fast electrons.

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Section: Introductionsmentioning

confidence: 99%

Effect of growth temperature on structural and electronic properties of ZnO thin films

Tahir

Jae

2017

AIP Conference Proceedings

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“…So far, the intense research in this field has focused on studying the electrical performance and the transparency in the visible and near infrared (300-2000 nm), as the two most relevant properties for visual displays and solar energy applications. Existing literature covers the impact of the fabrication method and deposition conditions [7,14,[18][19][20][21][22][23], the post-processing of the film (such as high temperature annealing treatments) [15,17,[24][25][26][27][28] or the role of the substrate in governing the properties of the TCOs [29,30]. In respect to the latter, most works use glass or SiO 2 as substrates [19,23,24,[31][32][33][34] or, more recently, flexible, lightweight materials like PET or PEN [30].…”

Section: Introductionmentioning

confidence: 99%

ITO and AZO films for low emissivity coatings in hybrid photovoltaic-thermal applications

et al. 2017

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Abstract:We report on the electrical and optical properties of ITO and AZO films fabricated directly on silicon substrates under several growth and annealing temperatures. We use broadband spectroscopic ellipsometry measurements (from 300 nm to 20 µm) to obtain a consistent model for the permittivity of each of the films. The results are then used to design an optimized, single layer, high transparency, high conductivity film, suitable as front transparent electrode and low thermal emissivity coating for silicon based solar cells. The best performance is found using the properties of the ITO film grown at 250 ºC, with a state of the art resistivity of 0.2 mΩ-cm and an optimized thickness of 75 nm which leads to 0.79 average absorptivity in the solar range (300-2000 nm) and 0.21 average emissivity in the thermal range (5-20 µm). The structural characterization of the films using X-Ray diffraction, and the Hall mobility and resistivity measurements of all the films are also provided, complementing and supporting the observed optical properties.

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“…ZnO with hexagonal structure has a wide optical band gap, 3.37 eV [1]. Zinc oxide has attracted extensive interest because of its important role in various applications, for example, gas sensor [2], surface acoustic wave devices [3], optical waveguides [4] as well as blue/UV light emitting devices [5].…”

Section: Introductionmentioning

confidence: 99%

Preparation and Electrochemical Performance of ZnO Films as Anode Materials for Li-Ion Batteries

et al. 2013

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In this work, the eect of rf power on the structural, electrical and electrochemical properties of ZnO thin lms was investigated. ZnO thin lms were deposited on glass and Cr coated stainless steel substrates by rf magnetron sputtering in pure Ar gas environment. ZnO thin lms for dierent rf powers (75, 100, and 125 W) were deposited keeping all other deposition parameters xed. ZnO thin lms were used as negative electrode materials for lithium-ion batteries, whose charge-discharge properties, cyclic voltammetry and cycle performance were examined. A high initial discharge capacity about 908 mAh g −1 was observed at a 0.5 C rate between 0.05 and 2.5 V. The crystallographic structure of the sample was determined by X-ray diraction. The electrical resistivity of the deposited lms was measured by the four-point-probe method. The thickness of the ZnO thin lms was measured using a prolometer.

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Room-temperature deposition of transparent conducting Al-doped ZnO films by RF magnetron sputtering method

Cited by 203 publications

References 24 publications

Effect of growth temperature on structural and electronic properties of ZnO thin films

Effect of growth temperature on structural and electronic properties of ZnO thin films

ITO and AZO films for low emissivity coatings in hybrid photovoltaic-thermal applications

Preparation and Electrochemical Performance of ZnO Films as Anode Materials for Li-Ion Batteries

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