Room temperature direct bonding of diamond and InGaP in atmospheric air

Liang, Jianbo; Nakamura, Yuji; Ohno, Yutaka; Shimizu, Yasuo; Nagai, Y.; Wang, Hongxing; Shigekawa, Naoteru

doi:10.1080/26941112.2020.1869435

Cited by 14 publications

(8 citation statements)

References 29 publications

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“…One way to overcome the lattice and thermal expansion mismatches between the integrating substrates is wafer direct bonding. Recently, Ga 2 O 3 /diamond, [ 17 ] Si/diamond, [ 18 ] InGaP/diamond, [ 19 ] and GaN/Si [ 20 ] heterogeneous integrations using low‐temperature hydrophilic bonding or plasma activation bonding method have been demonstrated. Although the direct bonding of diamond and dissimilar materials can be achieved at low temperatures, the thermal stability of the bonding interface is very concerned.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

et al. 2021

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The direct integration of gallium nitride (GaN) and diamond holds much promise for high‐power devices. However, it is a big challenge to grow GaN on diamond due to the large lattice and thermal‐expansion coefficient mismatch between GaN and diamond. In this work, the fabrication of a GaN/diamond heterointerface is successfully achieved by a surface activated bonding (SAB) method at room temperature. A small compressive stress exists in the GaN/diamond heterointerface, which is significantly smaller than that of the GaN‐on‐diamond structure with a transition layer formed by crystal growth. A 5.3 nm‐thick intermediate layer composed of amorphous carbon and diamond is formed at the as‐bonded heterointerface. Ga and N atoms are distributed in the intermediate layer by diffusion during the bonding process. Both the thickness and the sp2‐bonded carbon ratio of the intermediate layer decrease as the annealing temperature increases, which indicates that the amorphous carbon is directly converted into diamond after annealing. The diamond of the intermediate layer acts as a seed crystal. After annealing at 1000 °C, the thickness of the intermediate layer is decreased to approximately 1.5 nm, where lattice fringes of the diamond (220) plane are observed.

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Section: Introductionmentioning

confidence: 99%

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

et al. 2021

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“…Diamond is a wide bandgap material suitable for various applications such as magnetometry, heat sink, MOSFETs, − nuclear batteries, , and solar-blind UV detectors. , Owing to the high resistivity of diamond, detectors made of intrinsic diamond show extremely low dark current even at elevated temperatures, which makes diamond photoconductors popular in scientific research. , However, these detectors usually work at high voltages. Self-powered detectors have many advantages, such as energy saving and strong environmental adaptability, enabling good application prospects.…”

Section: Introductionmentioning

confidence: 99%

Self-Powered Solar-Blind UV Detectors Based on O-Terminated Vertical Diamond Schottky Diode with Low Dark Current, High Detectivity, and High Signal-to-Noise Ratio

Liu

Zhang

et al. 2022

ACS Appl. Electron. Mater.

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Self-powered solar-blind UV detectors were fabricated using high-quality Ru/diamond Schottky diodes. Photocurrents of 1 nA and 1.3 nA were obtained for detector Semi and Mesh under the condition of zero bias and 220 nm UV light irradiation, while the dark currents of these two detectors were 0.53 pA and 0.007 pA at 0 V, respectively. Photosensitive areas of detector Semi and Mesh were 1 mm 2 and 0.74 mm 2 , respectively. Rectification ratios as high as 1.5 × 10 7 and 5.7 × 10 8 at ±5 V for Semi and Mesh were obtained, showing good rectifying characteristics for the vertical Schottky diodes. Responsivities at 0 V of Semi and Mesh were 10.3 mA/W and 16.2 mA/W, respectively. High detectivities of 3.8 × 10 12 Jones and 5.2 × 10 13 Jones for detector Semi and Mesh indicate excellent self-powered detection performance. To make a comprehensive comparison of the performance of diamond solar-blind UV detectors, a log(I ph ) versus log(I dark ) graph was proposed, and the detector in this work showed an ultrahigh SNR of 2 × 10 5 . A high linear dynamic range of 105.9 dB was achieved for the self-powered detector Mesh.

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“…For example, SOD (Silicon-On-Diamond) technology is a promising alternative to standard SOI (Silicon-On-Insulator) due to the high heat-spreading capability of diamond material [4]. In addition, diamond and InGaP can be room temperature bonding to reduce the heat generated in the high-power and high-frequency devices based on GaAs [5].…”

Section: Introductionmentioning

confidence: 99%

Wafer-Scale Polishing of Polycrystalline MPACVD-Diamond

Huang

Zhou

et al. 2022

Surfaces

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Diamond offers great potential for use as a thermal spreader in various applications, including power electronics and radio-frequency (RF) applications. However, to be used as an efficient thermal spreader, the atomically smooth surface of the diamond is critical to be bonded with chips. Herein, a polishing technique for a 2-inch diameter wafer-scale bulk polycrystalline diamond substrate is proposed. In this work, 350 μm thick polycrystalline diamond is grown by the microwave plasma-assisted chemical vapor deposition (MPACVD) technique on a Si substrate at a growth rate of 8 µm/h. Thereafter, a three-step polishing process was applied to achieve an atomically smooth surface, consisting of grinding using a diamond slurry with an iron plate, ICP etching using the SF6 gas, and final mechanical polishing using a resin-bonded diamond wheel. Surface roughness of diamond characterized by atomic force microscopy showed the significantly reduced from 900 nm to 0.3 nm. Hence, this study provide the practical methods for obtaining atomically smooth diamond films suitable for thermal management in various areas including power electronics and RF devices.

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Room temperature direct bonding of diamond and InGaP in atmospheric air

Cited by 14 publications

References 29 publications

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

Self-Powered Solar-Blind UV Detectors Based on O-Terminated Vertical Diamond Schottky Diode with Low Dark Current, High Detectivity, and High Signal-to-Noise Ratio

Wafer-Scale Polishing of Polycrystalline MPACVD-Diamond

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