Room-temperature direct bonding of diamond and Al

Liang, Jianbo; yamajo, shoji; Kuball, Martin; Shigekawa, Naoteru

doi:10.1016/j.scriptamat.2018.09.016

Cited by 24 publications

(10 citation statements)

References 15 publications

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“…3(a)]. The amorphous layer was also reported for the Si/GaAs, GaP/GaAs, Al/diamond, and Si/Si bonding interface fabricated by SAB [31][32][33][34]. We found that the amorphous layer thickness decreased with increasing annealing temperature.…”

Section: Resultssupporting

confidence: 66%

Annealing effect of surface-activated bonded diamond/Si interface

Liang

Zhou

Masuya

et al. 2019

Diamond and Related Materials

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Highlights•Diamond/Si bonding interface could withstand a load of high temperature as high as 800 °C.•The amorphous layer observed at the bonding interface decreased with annealing temperature.•The residual stress released in the diamond of the bonding interface decreased with annealing temperature.•The residual stress formed in the bonding interface annealed at 1000˚C is much smaller than that of diamond grown on Si.

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Section: Resultssupporting

confidence: 66%

Annealing effect of surface-activated bonded diamond/Si interface

Liang

Zhou

Masuya

et al. 2019

Diamond and Related Materials

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“…In addition to the SiC wafer, the diamond substrate is another preferred choice in the heat dissipation. [79][80][81] To grow the diamond thin film onto the GaN device layer, the chemical vapor deposition technique using SiN as a seeding layer is usually employed at a temperature of above 600 C. Unfortunately, such high temperatures will induce undesired nucleation layer and thermal stress. In the approach of GaN growth on the diamond, a single-crystal diamond is used as the substrate for GaN epitaxial growth.…”

Section: Direct Bonding Of the Wide-bandgap Semiconductors Towards Himentioning

confidence: 99%

Progress in wafer bonding technology towards MEMS, high-power electronics, optoelectronics, and optofluidics

Tian

et al. 2020

International Journal of Optomechatronics

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“…No oxygen atoms were detected at the as-bonded interface, which is different from the result previously reported for an Al/diamond interface. 23 This result could have occurred because no oxide layer was formed at the interface or because the concentration of O atoms distributed at the interface was too low to detect. The oxidation temperature of copper is higher than 300 °C under atmospheric ambient conditions.…”

Section: Uncertainties Of Tbr (mentioning

confidence: 99%

“…Furthermore, the TBR could be greatly improved by the annealing process due to the recrystallization of the amorphous layer formed at the interface. We have previously reported the direct bonding of diamond with Al and Cu at room temperature by surface-activated bonding (SAB) and demonstrated the thermal stability of their bonding interfaces. , However, the effect of the annealing temperature on the atomic diffusion of the Cu/diamond interface, the thermal stability mechanism, and the thermal conductivity of the interface still remain unknown, and these are crucially important characteristics for better understanding the physical properties of the bonding interface and the application of the bonding interface for the heat dissipation of devices.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Nanoscopic Cu/Diamond Interfaces Prepared by Surface-Activated Bonding: Implications for Thermal Management

Liang

Ohno

Yamashita

et al. 2020

ACS Appl. Nano Mater.

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The microstructures of Cu/diamond interfaces prepared by surface-activated bonding at room temperature are examined by cross-sectional scanning transmission electron microscopy (STEM). A crystalline defect layer composed of Cu and diamond with a thickness of approximately 4.5 nm is formed at the as-bonded interface, which is introduced by irradiation with an Ar beam during the bonding process. No crystalline defect layer is observed at the 700 °C-annealed interface, which is attributed to the recrystallization of the defect layer due to the high-temperature annealing process.Instead of the defect layer, a mating interface layer and a copper oxide layer are formed at the interface.The mating interface layer and the copper oxide layer play a role in relieving the residual stress caused by the different thermal expansion coefficients of diamond and Cu. The thermal boundary resistance (TBR) of the as-bonded interface is measured to be 1.7± 0.2×10 -8 m 2 K/W by the time domain pulsedlight-heating thermoreflectance technique, and this value is virtually the same as the theoretical calculation value. These results indicate that the direct bonding of diamond and Cu is a very effective technique for improving the heat-dissipation performance of power devices.

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Room-temperature direct bonding of diamond and Al

Cited by 24 publications

References 15 publications

Annealing effect of surface-activated bonded diamond/Si interface

Annealing effect of surface-activated bonded diamond/Si interface

Progress in wafer bonding technology towards MEMS, high-power electronics, optoelectronics, and optofluidics

Characterization of Nanoscopic Cu/Diamond Interfaces Prepared by Surface-Activated Bonding: Implications for Thermal Management

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