Room-temperature epitaxial growth of ferromagnetic Fe3Si films on Si(111) by facing target direct-current sputtering

Yoshitake, Tsuyoshi; Nakagauchi, D.; Ogawa, Tetsuya; Itakura, Masaru; Kuwano, Noriyuki; Tomokiyo, Yoshitsugu; Kajiwara, Toshinori; Nagayama, Kazuaki

doi:10.1063/1.1978984

Cited by 63 publications

(44 citation statements)

References 11 publications

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“…In low-temperature epitaxial growth of thin films, crystal nucleation occurs in preference to grain growth, which suppresses island type growth, sintering, and thermal diffusion. This results in not only a flat surface and sharp interface but also the appearance of a quantum size effect that could benefit the development of electronic devices including assembled thin films and nanomaterials [3][4][5]. As a strategy for epitaxial growth, pulsed laser deposition (PLD) involves the ablation of high-energy film precursors from the target onto a substrate at a supersonic speed (∼10 4 m/s); this method is especially useful for nucleation at low temperatures, room temperature in particular.…”

Section: Introductionmentioning

confidence: 99%

Room-temperature selective epitaxial growth of CoO (1 1 1) and Co3O4 (1 1 1) thin films with atomic steps by pulsed laser deposition

Matsuda

Yamauchi

Shiojiri

et al. 2015

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

Room-temperature selective epitaxial growth of CoO (1 1 1) and Co3O4 (1 1 1) thin films with atomic steps by pulsed laser deposition

Matsuda

Yamauchi

Shiojiri

et al. 2015

Applied Surface Science

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“…During the last decade, thin films of this material have been widely studied. A lot of papers deal with the interplay of their structural and magnetic characteristics [5,6], as well as with the transport properties and developments of prototypes of spintronic devices [7,8]. However, the electronic structure and optical properties of Fe 3 Si are still rather poorly studied.…”

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confidence: 99%

Optical characteristics of an epitaxial Fe3Si/Si(111) iron silicide film

et al. 2014

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1.Currently, ferromagnetic iron silicide Fe 3 Si turns out to be a promising material for such applications as spin transistors, magnetoresistive memory, and mag neto optical devices [1][2][3][4] owing to its high Curie temperature (about 840 K), relatively high magnetic permeability, low magnetic and crystallographic anisotropy, high electrical resistivity, and high spin polarization (as high as 43%). During the last decade, thin films of this material have been widely studied. A lot of papers deal with the interplay of their structural and magnetic characteristics [5,6], as well as with the transport properties and developments of prototypes of spintronic devices [7,8]. However, the electronic structure and optical properties of Fe 3 Si are still rather poorly studied. In particular, the energy dependence of its relative permittivity is treated only in one theo retical paper [9], the results of which have not been verified by experiment. The main aims of our work are to study the optical characteristics of an epitaxial Fe 3 Si/Si(111) iron silicide film and to determine the dispersion of the relative permittivity ε using the spec troscopic ellipsometry technique. 2.The Fe 3 Si film was obtained by the thermal evap oration technique in ultrahigh vacuum at the recon structed Si(111)7 × 7 surface. The formation of the film structure was controlled by an LEF 751M high speed laser ellipsometer [10]. The technique used for the preparation of the atomically clean Si(111)7 × 7 surface, the process of growth of Fe 3 Si/Si(111)7 × 7 film, and the data on the structure of this film and its magnetic properties were described in [11].The data obtained by single wavelength ellipsome try for the synthesized Fe 3 Si/Si(111) film (Fig. 1) were analyzed by the method described in [12]. This analy sis was based on the optical model involving a homo geneous isotropic film at a semi infinite isotropic sub strate. The value obtained for the thickness of the formed film agrees well with the data provided by transmission electron microscopy. It equals 27 nm.In Fig. 1, we can see that the behavior of the thick ness at the initial stages of the film growth is not phys ical. The calculated refractive index n and the coeffi cient of absorption k vary drastically beginning from values close to the optical parameters of silicon (n = 3.93 and k = 0.54) to those characteristic of conduct ing materials (n = 3.43 and k = 3.54). We attribute such behavior at the initial stage of the film formation to the epitaxial island growth mechanism, rather than to layer by layer growth. After 45 min of film growth, the thickness begins growing monotonically and n and k achieve values remaining unchanged in the course of further growth. Thus, when the effective thickness achieves 5 nm, the Fe 3 Si film forms as a continuous layer. The values of the real and imaginary parts of the relative permittivity determined by the laser ellipsom etry (λ = 632.8 nm) at a temperature of 150° are ε' = -0.97 and ε'' = 24.07, respectively.3. In the present work, the energy ...

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“…It possesses two nonequivalent crystallographic and magnetic Fe sites with magnetic moments I Fe ¼ 2:2 B /atom and II Fe ¼ 1:35 B /atom, where B is the Bohr magneton. 15,16 Thus, Fe 3 Si can be considered as one of the simplest Heusler alloys: Fe II 2 Fe I Si. From theoretical calculations, 17 high spin polarization has been demonstrated at the Fermi level.…”

Section: Introductionmentioning

confidence: 99%

INFLUENCE OF Fe/Si THICKNESS RATIO ON STRUCTURAL AND MAGNETIC PROPERTIES OF Fe₃Si FILMS FABRICATED BY SPUTTERING

et al. 2019

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The structural and magnetic properties of Fe3Si films fabricated by layered sputtering on Si substrates dependent on the Fe/Si thickness ratio varying from 2:1 to 4:1 were investigated. X-ray diffraction (XRD) results show that over the whole range of the Fe/Si thickness ratio considered, all films consist of the polycrystalline Fe3Si phase. The film produced with the Fe/Si thickness ratio of 3:1 shows relatively high structural quality. Scanning electron microscopy (SEM) images reveal that the film layer can be clearly observed and the thickness of the film layer at Fe/Si thickness ratio of 3:1 is the thinnest. From the analysis of the magnetization curves, all of these films exhibit ferromagnetic behavior at room temperature. The sample at Fe/Si thickness ratio of 3:1 shows a high [Formula: see text] value of [Formula: see text]831[Formula: see text]emu/cm3, which is slightly lower than the bulk value of Fe3Si. The variety of its coercive force [Formula: see text] is associated with the change of grain size [Formula: see text] through [Formula: see text], and the discrepancy between the [Formula: see text] values of these films and the bulk Fe3Si is due to defects pinning magnetic domain. Meanwhile, the electrical resistivity remarkably decreases with the increase of the Fe/Si thickness ratio.

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Room-temperature epitaxial growth of ferromagnetic Fe3Si films on Si(111) by facing target direct-current sputtering

Cited by 63 publications

References 11 publications

Room-temperature selective epitaxial growth of CoO (1 1 1) and Co3O4 (1 1 1) thin films with atomic steps by pulsed laser deposition

Room-temperature selective epitaxial growth of CoO (1 1 1) and Co3O4 (1 1 1) thin films with atomic steps by pulsed laser deposition

Optical characteristics of an epitaxial Fe3Si/Si(111) iron silicide film

INFLUENCE OF Fe/Si THICKNESS RATIO ON STRUCTURAL AND MAGNETIC PROPERTIES OF Fe₃Si FILMS FABRICATED BY SPUTTERING

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Room-temperature epitaxial growth of ferromagnetic Fe3Si films on Si(111) by facing target direct-current sputtering

Cited by 63 publications

References 11 publications

Room-temperature selective epitaxial growth of CoO (1 1 1) and Co3O4 (1 1 1) thin films with atomic steps by pulsed laser deposition

Room-temperature selective epitaxial growth of CoO (1 1 1) and Co3O4 (1 1 1) thin films with atomic steps by pulsed laser deposition

Optical characteristics of an epitaxial Fe3Si/Si(111) iron silicide film

INFLUENCE OF Fe/Si THICKNESS RATIO ON STRUCTURAL AND MAGNETIC PROPERTIES OF Fe3Si FILMS FABRICATED BY SPUTTERING

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INFLUENCE OF Fe/Si THICKNESS RATIO ON STRUCTURAL AND MAGNETIC PROPERTIES OF Fe₃Si FILMS FABRICATED BY SPUTTERING