Room Temperature Fabrication of MIMCAPs via Aerosol Deposition

Wang, C.; Kim, H. J.; Meng, Fan‐Yi; Kim, H. K.; Li, Y.; Yao, Zhao; Kim, N. Y.

doi:10.1109/led.2015.2506406

Cited by 7 publications

(2 citation statements)

References 22 publications

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“…Among the various dry etching techniques hitherto applied, inductively coupled plasma reactive ion etching (ICP-RIE) is the most widely adopted technique featuring a damage-free, highly anisotropic and selective, with a high etching rate. It also allows independent adjustment of the gas mixture and the flow rate 15 – 18 .…”

Section: Introductionmentioning

confidence: 99%

Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications

Sung

Qiang

Yao

et al. 2017

Sci Rep

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This study presents a detailed fabrication method, together with validation, discussion, and analysis, for state-of-the-art silicon carbide (SiC) etching of vertical and bevelled structures by using inductively coupled plasma reactive ion etching (ICP-RIE) for microelectronic applications. Applying different gas mixtures, a maximum bevel angle of 87° (almost vertical), large-angle bevels ranging from 40° to 80°, and small-angel bevels ranging from 7° to 17° were achieved separately using distinct gas mixtures at different ratios. We found that SF6 with additive O2 was effective for vertical etching, with a best etching rate of 3050 Å/min. As for the large-angle bevel structures, BCl3 + N2 gas mixtures show better characteristics, exhibiting a controllable and large etching angle range from 40° to 80° through the adjustment of the mixture ratio. Additionally, a Cl2 + O2 mixture at different ratios is applied to achieve a small-angel bevels ranging from 7° to 17°. A minimum bevel angel of approximately 7° was achieved under the specific volume of 2.4 sccm Cl2 and 3.6 sccm O2. These results can be used to improve performance in various microelectronic applications including MMIC via holes, PIN diodes, Schottky diodes, JFETs’ bevel mesa, and avalanche photodiode fabrication.

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Section: Introductionmentioning

confidence: 99%

Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications

Sung

Qiang

Yao

et al. 2017

Sci Rep

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“…Integrated passive device (IPD) fabrication is one of the best possible solutions to produce high-quality and miniaturized size passive devices [28]. Recently, Gallium Arsenide (GaAs) substrate based IPD technology has been considered as a best candidate for lumped element implementation due to its high substrate resistivity and low substrate loss [29], [30]. The high resistivity of a substrate helps to reduce coupling losses between lumped components, suppresses substrate noise, and minimizes parasitic effects such as stray capacitance and stray inductance at high frequency [31].…”

Section: Balun Design Concepts Are Broadly Classified Into Distributedmentioning

confidence: 99%

Design Analysis of Integrated Passive Device-Based Balun Devices With High Selectivity for Mobile Application

et al. 2019

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This paper presents highly selective, low-loss, and miniaturized balun devices fabricated using the integrated passive device (IPD) technique for the GSM band (900/1800 MHz) and the WiFi band (2400 MHz) in mobile applications. Balun devices were fabricated on a gallium arsenide (GaAs) substrate using the IPD fabrication process to reduce the overall size (0.05λ g × 0.036λ g at 900 MHz). Each device is the combination of lattice lumped structure with a low-pass filter and a high-pass filter configuration. This structural formation of lumped elements helps to reduce the phase mismatch error in the balun devices. For all the balun devices, the measured results indicated a minimum amplitude imbalance (<0.47 dB) and low phase imbalance (180 ± 2.6 • ). Mathematically calculated, calculated after considering parasitic effects, simulated and measured results exhibited a good correlation. The return loss is below 18 dB and insertion loss is below 0.25 dB for the entire fabricated devices. A balun device with a center frequency of 900 MHz has given the best results amongst all fabricated devices. INDEX TERMS Integrated passive device (IPD), gallium arsenide (GaAs), MIM capacitor, spiral inductor.

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Effects of post-deposition annealing on BaTiO3/4H-SiC MOS capacitors using aerosol deposition method

Choi,

Lee,

Lee

et al. 2024

Appl. Phys. A

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Room Temperature Fabrication of MIMCAPs via Aerosol Deposition

Cited by 7 publications

References 22 publications

Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications

Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications

Design Analysis of Integrated Passive Device-Based Balun Devices With High Selectivity for Mobile Application

Effects of post-deposition annealing on BaTiO3/4H-SiC MOS capacitors using aerosol deposition method

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