Room temperature ferromagnetism in Mg-doped AlN semiconductor films

Xiong, Juan; Guo, Peng; Guo, Fei; Sun, Xiliang; Gu, Haoshuang

doi:10.1016/j.matlet.2013.12.018

Cited by 20 publications

(13 citation statements)

References 21 publications

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“…Aluminum nitride (AlN) thin films can be a promising candidate in optical, mechanical, and electronic applications. It can serve as a semiconductor when doped [1] and also as a passivation layer for semiconductors [2]. Besides, AlN thin films are integrated in surface acoustic wave (SAW) devices, where they insure high frequency ranges, a large electromechanical coupling factor (K 2 s ), and temperature stability of the respective device.…”

Section: Introductionmentioning

confidence: 99%

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

et al. 2021

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This paper reports the effect of Silicon substrate orientation and Aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by a DC magnetron sputtering technique at low temperatures. The structural analysis has revealed a strong (0001) fiber texture for both Si(100) and (111) substrates, and a hetero-epitaxial growth on a AlN buffer layer, which is only a few nanometers in size, grown by MBE onthe Si(111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si(111), in compression on Si(100) and under tension on a AlN buffer layer grown by MBE/Si(111) substrates, respectively. The interface between Si(111) and AlN grown by MBE is abrupt and well defined, contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at a low temperature (<250 °C).

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Section: Introductionmentioning

confidence: 99%

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

et al. 2021

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“…Meanwhile, it is noticed that the M s is enhanced with the increase of Mn content (approximately up to 1.3%), and then decreases. This decrease in M s is due to the fact that higher dopant ion concentrations result in shorter distances between the doped atoms, thus strengthening the antiferromagnetic interactions at the expense of ferromagnetic ordering [29,34,35]. Therefore, the Mn contents in AlN nanowires may exist a critical value.…”

Section: Resultsmentioning

confidence: 99%

Synthesis, magnetism and photoluminescence of Mn doped AlN nanowires

Yang

Zou

Wang

et al. 2022

Journal of Luminescence

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Manganese doped aluminum nitride (AlN:Mn) nanowires were fabricated by direct nitridation of Al and Mn mixed powders. The as-synthesized AlN:Mn nanowires were characterized by X-ray diffraction, Raman, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, scanning and transmission electron microscopy. The measurements reveal the successful incorporation of Mn 2+ ions into AlN nanowires. The magnetic and optical properties of the AlN:Mn nanowires were studied using vibrating sample magnetometer and photoluminescence spectroscopy. The AlN:Mn nanowires exhibit room temperature ferromagnetic behavior and a red emission band centered at 597 nm corresponding to the 4 T 1 ( 4 G)-6 A 1 ( 6 S) transition of Mn 2+ . The abnormal thermal quenching behavior and long afterglow feature are investigated through the temperature dependent emission and the afterglow spectrum. The thermoluminescence curve shows that AlN: Mn nanowires have a wide trap distribution, which leads to the abnormal thermal quenching behavior and persistent luminescence. Multifunctional AlN:Mn nanowires with magnetic and luminescence properties are expected to be used in spintronic and optoelectronic nanodevices.

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Section: Resultsmentioning

confidence: 99%

Synthesis, Magnetism and Photoluminescence of Mn Doped AlN Nanowires

Wang

et al. 2021

Preprint

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Manganese doped aluminum nitride (AlN:Mn) nanowires were fabricated by direct nitridation of Al and Mn mixed powders. The as-synthesized AlN:Mn nanowires were characterized by X-ray diffraction, Raman, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, scanning and transmission electron microscopy. The measurements reveal the successful incorporation of Mn2+ ions into AlN nanowires. The magnetic and optical properties of the AlN:Mn nanowires were studied using vibrating sample magnetometer and photoluminescence spectroscopy. The AlN:Mn nanowires exhibit room temperature ferromagnetic behavior and a red emission band centered at 597 nm corresponding to the 4T1(4G)-6A1(6S) transition of Mn2+. The abnormal thermal quenching behavior and long afterglow feature are investigated through the temperature dependent emission and the afterglow spectrum. The thermoluminescence curve shows that AlN: Mn nanowires have a wide trap distribution, which leads to the abnormal thermal quenching behavior and persistent luminescence. Multifunctional AlN:Mn nanowires with magnetic and luminescence properties are expected to be used in spintronic and optoelectronic nanodevices.

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Room temperature ferromagnetism in Mg-doped AlN semiconductor films

Cited by 20 publications

References 21 publications

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

Synthesis, magnetism and photoluminescence of Mn doped AlN nanowires

Synthesis, Magnetism and Photoluminescence of Mn Doped AlN Nanowires

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