Room temperature ferromagnetism in Mn-doped dilute ZnO semiconductor: An electronic structure study using X-ray photoemission

Singhal, R. K.; Dhawan, M. S.; Gaur, Shweta; Dolia, S. N.; Kumar, Sudhish; Shripathi, T.; Deshpande, Uday; Xing, Yutao; Baggio-Saitovitch, E.; Garg, K. B.

doi:10.1016/j.jallcom.2008.10.005

Cited by 103 publications

(35 citation statements)

References 36 publications

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“…A single peak centered at 639.9 eV, demonstrates the presence of only Mn 2? ions in this sample [42]. However a slight asymmetry in the higher binding energy region has been observed in Mn 2p 3/2 spectra of sample S 2 .…”

Section: Resultsmentioning

confidence: 54%

Magnetic properties of Mn doped ZnO: the role of synthesis route

Karmakar

Neogi

Midya

et al. 2016

J Mater Sci: Mater Electron

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Structural, morphological, optical, magnetic properties and chemical state of the constituent elements of 2 at% Mn doped ZnO samples synthesized by solid state reaction and sol-gel techniques were analyzed. The role of chemical or valency state in tuning the magnetic properties has been investigated. X-ray diffractometer, scanning electron microscope, UV-visible and X-ray photoelectron spectroscopes and superconducting quantum interference device vibrating sample magnetometer (SQUID VSM) were employed for investigation. Mn incorporation in ZnO lattice has been shown by single phase wurtzite structured samples. The presence of defects particularly zinc vacancy (V Zn ) has been evidenced from band tailing. Solid state reaction technique derived sample exhibit strong intrinsic ferromagnetism but sol-gel sample didn't show strong ferromagnetic (FM) ordering. Antiferromagnetic (AFM) interaction is present in both samples. The chemical state of Mn is ?2 for solid state reaction technique derived sample whereas for sol-gel technique derived sample it is a mixed chemical state (exists in both ?2 and ?3 states). Finally, the peculiar magnetic behavior has been interpreted from the interaction between V Zn and d-electrons of Mn 2? and Mn 3? states.

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Section: Resultsmentioning

confidence: 54%

Magnetic properties of Mn doped ZnO: the role of synthesis route

Karmakar

Neogi

Midya

et al. 2016

J Mater Sci: Mater Electron

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“…As can be seen, the diamagnetism dominates in pure ZnO and Zn 0.995 Co 0.005 O, while paramagnetism dominates in other samples. RT FM can be clearly observed after the paramagnetic and diamagnetic contributions are separated out by subtracting the linear part in high fields [18]. From the M-H curves with high field in Fig.…”

Section: Resultsmentioning

confidence: 95%

Room-Temperature Ferromagnetism in Co-doped ZnO Prepared by Microemulsion

Zhang

Shen

et al. 2012

J Supercond Nov Magn

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Zn 1−x Co x O (x = 0, 0.005, 0.01, 0.02, 0.03, 0.06, 0.12) powders have been synthesized by the microemulsion method. XRD patterns confirm the pure wurtzite structure without any impurity phase. TEM images illustrate that Zn 1−x Co x O particles are formed by aggregation of small crystallites. The magnetization measurements show clear room-temperature ferromagnetism in Zn 1−x Co x O (x = 0, 0.005, 0.01), and the saturated ferromagnetic magnetization increased with increasing Co concentration to 0.01. However, the ferromagnetic magnetization decreased drastically with further increasing Co concentration (x > 0.01). PL spectra clearly show an increasing concentration of oxygen vacancies with increasing Co concentration to 0.01, and strong suppression of oxygen vacancies with further increasing Co concentration in Zn 1−x Co x O. We conclude that the high concentration of oxygen vacancies is the key origin for the observed ferromagnetism in Co-doped ZnO.

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“…Transition metal (TM) doped ZnO thin films have attracted tremendous attentions [1][2][3] in recent years since the theoretical predication of room-temperature ferromagnetism property was given by T. Ditel et al 4,5 However, the origin of ferromagnetism is still controversial. Some researchers proposed that the ferromagnetism in TM doped ZnO was tuned by point defects such as oxygen vacancy (V o ), 6 zinc interstitial (Zn i ) 7 and zinc vacancy (V Zn ).…”

Section: Introductionmentioning

confidence: 99%

Zinc vacancy and erbium cluster jointly promote ferromagnetism in erbium-doped ZnO thin film

et al. 2014

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Zn1-xErxO (0.005 ≤ x ≤ 0.04) thin films have been prepared by inductively coupled plasma enhanced physical vapor deposition method. Ferromagnetism, crystal structure, microstructure and photoluminescence properties of the films were characterized. It is found that the chemical valence state of Er is trivalent, and the Er3+ cations play an important role in ferromagnetism. Both saturated magnetization (Ms) and zinc vacancy (VZn) are decreased with the increase of x from 0.005 to 0.03. However, further increasing x to 0.04, the Ms is quenched due to the generation of Er clusters. It reveals that the intensity of Ms is not only associated with the VZn concentration, but also related to the Er clusters. The VZn concentration and the Er clusters can jointly boost the ferromagnetism in the Zn1-xErxO thin films.

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Room temperature ferromagnetism in Mn-doped dilute ZnO semiconductor: An electronic structure study using X-ray photoemission

Cited by 103 publications

References 36 publications

Magnetic properties of Mn doped ZnO: the role of synthesis route

Magnetic properties of Mn doped ZnO: the role of synthesis route

Room-Temperature Ferromagnetism in Co-doped ZnO Prepared by Microemulsion

Zinc vacancy and erbium cluster jointly promote ferromagnetism in erbium-doped ZnO thin film

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