Room temperature GaAs exciton-polariton light emitting diode

Abstract

Room temperature GaAs polariton emission is demonstrated under electrical injection. Temperature and angle-resolved electroluminescence measurements on a polariton light emitting diode clearly show the persistence of Rabi splitting and anticrossing behavior at temperatures as high as 315 K. We show that by increasing the number of quantum wells in the structure, the cutoff temperature for the strong coupling regime can be pushed beyond room temperature, in good agreement with theory. Our results suggest that optimally designed GaAs microcavities are perfectly suited for room temperature polaritronics.

Unconditional generation of bright coherent non-Gaussian light from exciton-polariton condensates

“…A standard microcavity quantum well system is used, where exciton-polaritons are pumped by an excitation laser or electrical injection [42]. A secondary injection locking laser is introduced at normal incidence of variable intensity.…”

Oriented polaritons in strongly-coupled asymmetric double quantum well microcavities

“…A Ω V RS ∼ 5.6 meV Rabi splitting is measured at 10 K in this structure. Polariton LEDs are processed into 400 µm diameter mesas with a ring-shaped Ti/Pt electrode deposited after a second etch step to contact the lower p-layers, improving the series resistance (details in [6,22]). …”

GaN-based microcavity polariton light emitting diodes

“…For electrical driven aspect, the electrically excited microcavity polariton emitter had been demonstrated in organic semiconductors and a GaAs/AlGaAs quantum cascade structure previously [10,11]. Due to the lattice-matched substrate and mature epitaxial technology, electrically pumped polariton LEDs have been demonstrated in commonly used GaAs based multiple quantum wells (MQWs) system at temperature from 10K to 315 K [12][13][14][15]. Although RT polariton LED is realized in GaAs system [13], they still suffers from small exciton binding energy and oscillator strength, from this point of view, wide bandgap materials with larger exciton binding energy and oscillator strength provide more a reliable RT operation for practical polariton devices.…”