Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 μm

Vicet, A.; Nicolas, Jean-Christophe; Genty, F.; Rouillard, Y.; Skouri, E. M.; Баранов, А. Н.; Alibert, C.

doi:10.1049/ip-opt:20000298

Cited by 16 publications

(6 citation statements)

References 6 publications

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“…This open path configuration has to be considered apart from the con- figuration using a cell filled with the gas to analyse at a reduced pressure. Thanks to the reduction of the absorption line widths, sensitivities as low as 10 ppm of CH 4 at 100 torr were obtained using the so-called 'direct absorption spectroscopy' technique (Vicet et al . 2000).…”

Section: Gas Spectroscopymentioning

confidence: 99%

Edge and vertical surface emitting lasers around 2.0–2.5 μm and their applications

Rouillard

Genty

Pérona

et al. 2001

Philosophical Transactions of the Royal Society of London. Seri

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Section: Gas Spectroscopymentioning

confidence: 99%

Edge and vertical surface emitting lasers around 2.0–2.5 μm and their applications

Rouillard

Genty

Pérona

et al. 2001

Philosophical Transactions of the Royal Society of London. Seri

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“…The quantum ring nanostructures of InAs are prepared using the droplet epitaxy process on GaSb substrate [10]. A GaSb-based laser diode emission within 2-3 μm [11] has been shown to be appropriate for gas detection. Similarly, GaSb-based vertical-cavity-surface-emitting lasers are also being explored [12,13].…”

Section: Introductionmentioning

confidence: 99%

Engineering of the band gap and optical properties of In_xGa_1−x(As/Sb) via across composition alloying for solar cell applications using density functional theory-based approaches

et al. 2019

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The optoelectronic properties of InxGa1−x(As/Sb) are analyzed using density functional theory by employing a modified potential scheme of Trans and Blaha as developed in WIEN2k code. The indium doping in GaAs and GaSb tune the band gap from 1.56 to 0.43 eV and 0.82 to 0.30 eV, respectively, which highlights their significance for solar cell related applications. The optical characteristics are assessed by studying the dielectric constant, refraction, absorption, optical conductivity and optical loss of light energy. The static dielectric constant related to the optical band gap through Penn’s model and with static refractive index = n2(0) increase consistently between the calculated results. The maximum absorption and small optical loss factor for visible to near UV regions can enhance the optical efficiency for solar cell and optoelectronic applications. Moreover, higher optical conductivity within 3.5–4.5 eV allows forward current, which is attractive for practical applications.

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“…GaSb-based III-V semiconductor quantum well diode lasers cover this particular wavelength range. CH 4 has a very strong absorption line at 2.3 µm wavelength [2][3][4], and therefore GaInAsSb/AlGaAsSbbased lasers emitting at that particular wavelength are of high interest [5][6][7][8]. For such diode lasers, Al 0.9 Ga 0.1 As y Sb 1-y lattice-matched to GaSb is used as cladding layers [5,[9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Dopant incorporation in Al 0.9 Ga 0.1 As 0.06 Sb 0.94 grown by molecular beam epitaxy

Patra

Tran

Vines

et al. 2017

Journal of Crystal Growth

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Incorporation of beryllium (Be) and tellurium (Te) dopants in epitaxially grown Al 0.9 Ga 0.1 As 0.06 Sb 0.94 layers was investigated. Carrier concentrations and mobilities of the doped layers were obtained from room temperature Hall effect measurements, and dopant densities from secondary ion mass spectrometry depth profiling. An undoped Al 0.3 Ga 0.7 As cap layer and side wall passivation were used to reduce oxidation and improve accuracy in Hall effect measurements. The measurements on Be-doped samples revealed high doping efficiency and the carrier concentration varied linearly with dopant density up to the highest

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Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 μm

Cited by 16 publications

References 6 publications

Edge and vertical surface emitting lasers around 2.0–2.5 μm and their applications

Edge and vertical surface emitting lasers around 2.0–2.5 μm and their applications

Engineering of the band gap and optical properties of In_xGa_1−x(As/Sb) via across composition alloying for solar cell applications using density functional theory-based approaches

Dopant incorporation in Al 0.9 Ga 0.1 As 0.06 Sb 0.94 grown by molecular beam epitaxy

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Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 μm

Cited by 16 publications

References 6 publications

Edge and vertical surface emitting lasers around 2.0–2.5 μm and their applications

Edge and vertical surface emitting lasers around 2.0–2.5 μm and their applications

Engineering of the band gap and optical properties of InxGa1−x(As/Sb) via across composition alloying for solar cell applications using density functional theory-based approaches

Dopant incorporation in Al 0.9 Ga 0.1 As 0.06 Sb 0.94 grown by molecular beam epitaxy

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Engineering of the band gap and optical properties of In_xGa_1−x(As/Sb) via across composition alloying for solar cell applications using density functional theory-based approaches