Room‐Temperature Gate‐Tunable Nonreciprocal Charge Transport in Lattice‐Matched InSb/CdTe Heterostructures

Abstract

InSb channel. The designed device structure was later exported to the Sdevice tool, wherein the 2D Poisson solver (including both electrons and holes) was used to obtain the real-space band diagram and carrier distribution under different gate-voltage biases.

Light-induced giant enhancement of nonreciprocal transport at KTaO3-based interfaces

“…The fitting range of the magnetic field is set to be ±0.7 T. The corresponding curves and parameters of the dark condition are also included in ( b , d – f ) for comparison. g The summarized graph for γ of various material systems, such as InSb/CdTe 17 , BiTeBr 26 , Bi 2 Se 3 /Cu 54 , (Ge,Mn)Te 16 and LaAlO 3 /SrTiO 3 22 , that utilize various methods for the nonreciprocal transport modulation. …”

“…A phenomenological expression for this directional transport is expressed by generalizing Onsager’s theorem as follows 9 , 10 where R 0 , β , γ , I, and B represent the resistance at zero magnetic field, the coefficient of the normal magnetoresistance (MR), the nonreciprocal transport coefficient, electric current, and the external in-plane magnetic field perpendicular to I , respectively. Experimentally, nonreciprocal charge transport has been demonstrated in a variety of low-symmetry systems, including topological insulators/semimetals 11 – 14 , polar semiconductors 15 , 16 , semiconductor heterostructures 17 , superconducting systems 18 – 21 and correlated oxide heterostructures 22 – 24 . Achieving a high magnitude of this directional charge transport is of vital importance towards the next-generation two-terminal rectification and spin-orbitronic devices 20 , 25 .…”

“…Achieving a high magnitude of this directional charge transport is of vital importance towards the next-generation two-terminal rectification and spin-orbitronic devices 20 , 25 . To date, considerable efforts have been devoted to achieving the larger γ value via gate bias 17 , 22 and ionic-liquid gating 26 . However, these electric-field-effect gating means remain highly limited to manipulate the Rashba spin-orbit coupling (SOC) strength and the Fermi level due to the relatively weak carrier tunability 22 , thus seriously restricting the γ enhancement.…”

Fe Single-Atoms Combined with Chitosan for Enhanced Electromagnetic Wave Absorption

“…Among them, carbon material has attracted wide attention of scientists because of its excellent electrical conductivity, light weight, porous structure, large specific surface area and other advantages. These carbon materials include graphene, MXene, carbon nanotubes, carbon fiber, carbon quantum dots, and so on [5][6][7] . However, the excessive electrical conductivity of these carbon materials leads to poor impedance matching.…”