Room temperature growth of high crystalline quality Cu3N thin films by modified activated reactive evaporation

Sahoo, Guruprasad; Meher, S. R.; Jain, Mahaveer K.

doi:10.1016/j.mseb.2014.10.002

Cited by 42 publications

(17 citation statements)

References 33 publications

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“…However, this also has a direct impact on the optical properties and energy band gap of Cu 3 N, which is strongly dependent on its lattice constant. All estimates of the optical energy band gap determined previously from steady-state UV–vis absorption-transmission spectroscopy, − UV–vis reflectance-transmission, and spectroscopic ellipsometry ,, fall in the range of 1.2 to 2.4 eV. A single value for the optical band gap was determined in each case, but it was not clarified if this corresponds to the direct or indirect energy bandgap.…”

Section: Introductionmentioning

confidence: 99%

“…A single value for the optical band gap was determined in each case, but it was not clarified if this corresponds to the direct or indirect energy bandgap. Only Sahoo et al claimed that the indirect and direct band gaps determined from steady-state UV–vis spectroscopy fall in the ranges of 1.17–1.68 and 1.72–2.38 eV, respectively, by changing the pressure during deposition, but the optical properties were not really understood previously in terms of the electronic band structure of Cu 3 N.…”

Section: Introductionmentioning

confidence: 99%

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Observation of the Direct Energy Band Gaps of Defect-Tolerant Cu₃N by Ultrafast Pump-Probe Spectroscopy

et al. 2020

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Cu 3 N with a cubic crystal structure has been prepared from Cu on fused SiO 2 under a flow of NH 3 :O 2 between 400 and 600 °C. All Cu 3 N layers exhibited distinct maxima in differential transmission at ∼500, 550, and 630, 670 nm with the same spectral structure and shape on a ps timescale as shown by ultrafast pump-probe spectroscopy. We show that the maxima at 630 (≡1.97 eV) and 670 nm (≡1.85 eV) correspond to the M and R direct energy band gaps of Cu 3 N, in excellent agreement with density functional theory calculations of the electronic band structure. These findings are corroborated further by the fact that Cu 3 N as-deposited by reactive sputtering under 100% N 2 at 25 °C and 10 −2 mbar did not exhibit a fine spectral structure due to a smeared density of states, poor crystallinity, and a high density of defects, but annealing under NH 3 :H 2 at 300 °C revealed a similar spectral structure to Cu 3 N obtained from Cu under NH 3 :O 2 . In contrast to the above, we suggest that the peaks at 500 (≡2.48 eV) and 550 nm (≡2.25 eV) might correspond to the M and R direct gaps of certain regions of Cu 3 N under strain that changes the lattice constant and band gap. We discuss the charge carrier generation and recombination mechanisms in terms of Cu interstitials and vacancies that are known to be energetically located near the band edges, thus allowing the observation of the direct energy band gaps in this defect tolerant semiconductor.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Observation of the Direct Energy Band Gaps of Defect-Tolerant Cu₃N by Ultrafast Pump-Probe Spectroscopy

et al. 2020

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“…In contrast, it was reported that pyrolysis of Cu 3 N becomes remarkable in a vacuum atmosphere when the sample temperature exceeds 350 °C. 37 Cu 3 N does not seem as thermodynamically stable as other nitrides, e.g., AlN and Si 3 N 4 . It is thus expected that copper nitride will react easily with atomic hydrogen.…”

Section: Results and Discussionmentioning

confidence: 90%

Significant Improvement of Copper Dry Etching Property of a High-Pressure Hydrogen-Based Plasma by Nitrogen Gas Addition

et al. 2019

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The characteristics of copper (Cu) isotropic dry etching using a hydrogen-based plasma generated at 13.3 kPa (100 Torr) were improved dramatically by simply introducing a moderate amount of N 2 gas into the process atmosphere. A maximum Cu etch rate of 2.4 μm/min was obtained by nitrogen addition at a H 2 mixture ratio ( C H 2 ) of 0.9 and an input power of 70 W. The etch rate for the optimally N 2 -added plasma was 8 times higher than that for the pure H 2 plasma. The Cu etch rate increased with increasing input power. The maximum etch rate reached 3.1 μm/min at an input power of 100 W and a C H 2 of 0.9. The surface roughness of the etched copper decreased as a result of optimum N 2 addition. Furthermore, N 2 addition also improved the etch selectivity between Cu and SiO 2 such that the selectivity ratio reached 190. Finally, selective etching of a trench-patterned Si wafer with an electroplated Cu layer was demonstrated.

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“…By increasing ST, more nanorods growth on the planes leading to increasing the intensity. However, increasing the peaks at 37.52° , 38.30° , 37.54° , 38.01° and 38.08° by increasing Au ST demonstrating that the (111) plane is the preferred crystalline growth direction for Au nanorods [32][33][34][35][36] .…”

Section: Structural Propertiesmentioning

confidence: 99%

Negative permittivity and permeability of gold nanostructured thin films in UV–vis region

Jalilian

Edalati-Boostan

Moradian³

2018

J. Nanophoton.

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In this article, we report the growth of gold nanorods on glass substrates and copper nanoparticle thin films by cylindrical direct current magnetron sputtering (CDCMS) at room temperature. The grown gold nanorods have short lengths of < 20nm and show negative optical parameters in UV-Vis region. So far negative permittivity and permeability were only shown for complex artificial structures. In a case of simple structures like gold nanorods, the negative optical parameters were only predicted by simulation methods and considering ideal structures and they were not yet reported by experimental groups, who has grown or synthesis gold nanorods by physical or chemical methods. The small size of gold nanorods and thickness of our samples compare to other experimental groups could be the reason of negative permittivity and permeability in our case. Low loss metamaterials with simultaneously negative permittivity and permeability are desired for practical applications in many optical devices such as optical switching, waveguides, modulators, and plasmonic antenna arrays. The optical properties of the grown gold nanorods were defined by ultraviolet-visible (UV-Vis) spectroscopy and their quality was assessed through multi-technique characterization using transmission electron microscopy (TEM), field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and energy dispersed X-ray (EDX). KEYWORDSdc magnetron sputtering, localized surface plasmon resonance, metamaterials, nanorods, negative permittivity, negative permeability.------------

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Room temperature growth of high crystalline quality Cu3N thin films by modified activated reactive evaporation

Cited by 42 publications

References 33 publications

Observation of the Direct Energy Band Gaps of Defect-Tolerant Cu₃N by Ultrafast Pump-Probe Spectroscopy

Observation of the Direct Energy Band Gaps of Defect-Tolerant Cu₃N by Ultrafast Pump-Probe Spectroscopy

Significant Improvement of Copper Dry Etching Property of a High-Pressure Hydrogen-Based Plasma by Nitrogen Gas Addition

Negative permittivity and permeability of gold nanostructured thin films in UV–vis region

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Room temperature growth of high crystalline quality Cu3N thin films by modified activated reactive evaporation

Cited by 42 publications

References 33 publications

Observation of the Direct Energy Band Gaps of Defect-Tolerant Cu3N by Ultrafast Pump-Probe Spectroscopy

Observation of the Direct Energy Band Gaps of Defect-Tolerant Cu3N by Ultrafast Pump-Probe Spectroscopy

Significant Improvement of Copper Dry Etching Property of a High-Pressure Hydrogen-Based Plasma by Nitrogen Gas Addition

Negative permittivity and permeability of gold nanostructured thin films in UV–vis region

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Observation of the Direct Energy Band Gaps of Defect-Tolerant Cu₃N by Ultrafast Pump-Probe Spectroscopy

Observation of the Direct Energy Band Gaps of Defect-Tolerant Cu₃N by Ultrafast Pump-Probe Spectroscopy