Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

Mirzaei, Ali; Huh, Jeung Soo; Kim, Sang Sub; Kim, Hyoun Woo

doi:10.1007/s13391-018-0033-2

Cited by 49 publications

(17 citation statements)

References 94 publications

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“…The ternary chalcopyrites and pnictides semiconductor compounds have attracted a considerable research attention because of their peculiar crystal structure as mentioned above and unique physical properties such as high melting point, high index of refraction and nonlinear susceptibility, and so on 26‐28 . These properties present the chalcopyrites and pnictides as promising candidates for potential device applications in the fields of semiconductor radiation detectors, 2 electronic, 29 nonlinear optics, 30,31 solar energy, and thermoelectricity 32‐36 …”

Section: Introductionmentioning

confidence: 99%

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Proposal of new stable ABC ₂ type ternary semiconductor pnictides K ₃ Cu ₃ P ₂ and K ₃ Ni ₃ P ₂

2020

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Summary The ABC2 type ternary semiconductors have attracted much attention owing to their increasing fundamental and technological interest in optoelectronic, thermoelectric and nuclear detector applications. In this paper, using first‐principles methods, we first time reported on structural, optoelectronic, and thermophysical properties of two newly designed ABC2 type ternary semiconductor pnictides namely, K3Cu3P2 and K3Ni3P2. For the comparative analysis of the properties derived from density‐functional‐theory, we employed the most accurate full‐potential linearized augmented plane wave method. To count for electronic correlation and exchange interactions in compounds K3Cu3P2 and K3Ni3P2, we employed modified‐Becke‐Johnson potential and generalized‐gradient‐approximation (GGA) subjected to Hubbard potential U in the form of GGA + U method, respectively. Both the compounds are found to be stable mechanically and thermodynamically, and hence could be synthesized. From the calculated electronic band structures we predict direct band gap semiconducting nature of the compounds with band gap values of order 1.7 eV (spin up)and 1.82 eV (spin down)for K3Ni3P2 and 1.8 eV for K3Cu3P2. The density of states revealed that Ni‐3d and Cu‐3d states contribute mainly in the valence band of the compounds, having moderate spin symmetry in up and down spin polarized states. The calculated optical band gap for K3Ni3P2 is 1.9 eV (spin up) and 1.88 eV (spin down); while for K3Cu3P2 it is 1.8 eV. The optical spectra also showed that the main peak occurred due to hybridization of Ni/Cu‐d states. The optical dispersive spectra exhibit that both materials are efficient absorbers of photons in the UV region. On the other hand, the value of reflectivity is low in IR to visible region, while strong reflectivity is observed in UV part of the spectrum. To investigate the magnetic nature, the computed cell magnetic moment for K3Ni3P2 is 3.0 μB. As such, these materials are suitable in thermophysical and optoelectronic devise applications.

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Section: Introductionmentioning

confidence: 99%

“…For the types and structural properties of compound semiconductor the readers are referred to Reference 1. For instance, compound semiconductor materials are more suitable for semiconductor radiation detectors withstanding extreme conditions of high temperature and pressure 2 owing to high atomic number, high density, etc.…”

Section: Introductionmentioning

confidence: 99%

Proposal of new stable ABC ₂ type ternary semiconductor pnictides K ₃ Cu ₃ P ₂ and K ₃ Ni ₃ P ₂

2020

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“…In addition, semiconductor-based solid-state radiation sensors are widely used because they can generate numerous electron–hole pairs in response to incident radiation generated at low photon or particle energies, compared to conventional scintillators [ 15 ]. Solid-state radiation sensors and the materials used in them can be classified into two main classes: single detectors, which are mainly fabricated using silicon, germanium, or metals (e.g., platinum) and compound detectors, containing at least two elements (e.g., thallium bromide or thallium gallium selenide), which were proposed because Si and Ge single detectors need low temperatures to work efficiently at low noise levels [ 16 , 17 , 18 ].…”

Section: Introductionmentioning

confidence: 99%

Monolayer Graphene Radiation Sensor with Backend RF Ring Oscillator Transducer

2022

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This paper proposes a new graphene gamma- and beta-radiation sensor with a backend RF ring oscillator transducer employed to convert the change in the graphene resistivity due to ionizing irradiation into a frequency output. The sensor consists of a CVD monolayer of graphene grown on a copper substrate, with an RF ring oscillator readout circuit in which the percentage change in frequency is captured versus the change in radiation dose. The novel integration of the RF oscillator transducer with the graphene monolayer results in high average sensitivity to gamma irradiation up to 3.82 kΩ/kGy, which corresponds to a percentage change in frequency of 7.86% kGy−1 in response to cumulative gamma irradiation ranging from 0 to 1 kGy. The new approach helps to minimize background environmental effects (e.g., due to light and temperature), leading to an insignificant error in the output change in frequency of the order of 0.46% when operated in light versus dark conditions. The uncertainty in readings due to background light was analyzed, and the error in the resistance was found to be of the order of 1.34 Ω, which confirms the high stability and selectivity of the proposed sensor under different background effects. Furthermore, the evolution of the graphene’s lattice defect density due to radiation was observed using Raman spectroscopy and SEM, indicating a lattice defect density of up to 1.780 × 1011/cm2 at 1 kGy gamma radiation, confirming the increase in the graphene resistance and proving the graphene’s sensitivity. In contrast, the graphene’s defect density in response to beta radiation was 0.683 × 1011/cm2 at 3 kGy beta radiation, which is significantly lower than the gamma effects. This can be attributed to the lower p-doping effect caused by beta irradiation in ambient conditions, compared with that caused by gamma irradiation. Morphological analysis was used to verify the evolution of the microstructural defects caused by ionizing irradiation. The proposed sensor monitors the low-to-medium cumulative range of ionizing radiations ranging from 0 to 1 kGy for gamma radiation and 0 to 9 kGy for beta radiation, with high resolution and selectivity, filling the research gap in the study of graphene-based radiation sensors at low-to-medium ionizing radiation doses. This range is essential for the pharmaceutical and food industries, as it spans the minimum range for affecting human health, causing cancer and DNA damage.

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“…An ideal room‐temperature X‐ray detection material should have a high Figure‐of‐merit, an easy preparation and a low cost . In recent years, dense‐phase semiconductor materials have attracted significant attention owing to their capability of directly converting X‐ray photons to charge carriers, while providing excellent energy and spatial resolution . In general, semiconductor materials used for X‐ray detection require high detection efficiency and sensitivity, which are strongly dependent on the following physical parameters: 1) a high atomic number (>40) for efficient radiation‐atom interactions; 2) a high mass density (≥5 g cm −3 ) to enable the detector to have sufficient blocking capacity; 3) an appropriate large band gap energy (1.5–2.5 eV) to maintain a low intrinsic carrier concentration and a low leakage current; 4) a high resistivity (≥10 8 Ω cm) that suppresses dark current, thereby ensuring that excitation caused by ionizing radiation is detected, rather than that caused by thermal energy; 5) a high mobility‐lifetime product (μτ) to obtain a high signal‐to‐noise ratio (SNR) .…”

Section: Introductionmentioning

confidence: 99%

A Photoconductive X‐ray Detector with a High Figure of Merit Based on an Open‐Framework Chalcogenide Semiconductor

Liang

Zhang

et al. 2020

Angewandte Chemie

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Awide range of tunability in the physical parameters of as emiconductor used for X-ray detection is desirable to achieve targeted performance optimization. However,i n adense-phase semiconductor,fine-tuning one parameter often leads to unwanted changes in other parameters.H erein, the intrinsic openness in an open-framework semiconductor has been confirmed, for the first time,tobeakey structural factor that weakens the mutual exclusivity of the adjustable physical parameters owingt oan on-linear control mechanism. The controllable doping of Si nazeolitic In-Se host results in an optimal balance between resistivity,b and gap,a nd carrier mobility,w hich finally results in an excellent X-rayd etector with ah igh figure of merit for the mobility-lifetime product (7.12 10 À4 cm 2 V À1); this value is superior to that of ac ommercial a-Se detector.T he current strategy of choosing openframework semiconductor materials opens an ew windowf or targeting high-performance X-ray detection.

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Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

Cited by 49 publications

References 94 publications

Proposal of new stable ABC ₂ type ternary semiconductor pnictides K ₃ Cu ₃ P ₂ and K ₃ Ni ₃ P ₂

Proposal of new stable ABC ₂ type ternary semiconductor pnictides K ₃ Cu ₃ P ₂ and K ₃ Ni ₃ P ₂

Monolayer Graphene Radiation Sensor with Backend RF Ring Oscillator Transducer

A Photoconductive X‐ray Detector with a High Figure of Merit Based on an Open‐Framework Chalcogenide Semiconductor

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Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

Cited by 49 publications

References 94 publications

Proposal of new stable ABC 2 type ternary semiconductor pnictides K 3 Cu 3 P 2 and K 3 Ni 3 P 2

Proposal of new stable ABC 2 type ternary semiconductor pnictides K 3 Cu 3 P 2 and K 3 Ni 3 P 2

Monolayer Graphene Radiation Sensor with Backend RF Ring Oscillator Transducer

A Photoconductive X‐ray Detector with a High Figure of Merit Based on an Open‐Framework Chalcogenide Semiconductor

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Proposal of new stable ABC ₂ type ternary semiconductor pnictides K ₃ Cu ₃ P ₂ and K ₃ Ni ₃ P ₂

Proposal of new stable ABC ₂ type ternary semiconductor pnictides K ₃ Cu ₃ P ₂ and K ₃ Ni ₃ P ₂