Room-temperature heteroepitaxy of single-phase Al1−xInxN films with full composition range on isostructural wurtzite templates

Hsiao, Ching‐Lien; Pališaitis, Justinas; Junaid, Muhammad; Persson, Per; Jensen, Jens; Zhao, Qingxiang; Hultman, Lars; Chen, Li‐Chyong; Chen, Kuei‐Hsien; Birch, Jens

doi:10.1016/j.tsf.2012.09.072

Cited by 28 publications

(43 citation statements)

References 48 publications

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“…Details about strain formation in the Al 1-x In x N layers can be found elsewhere. 19 The low-loss spectra in Fig. 3 contain only one strong signal that is attributed to the bulk plasmon, which is a collective oscillation of the valence electrons.…”

Section: Discussionmentioning

confidence: 96%

“…19 Two of the samples are multilayer Al 1-x In x N samples (ML) of different composition grown on ZnO (0001) (ML-ZnO) and Al 2 O 3 (0001) (ML-Al 2 O 3 ) substrates, respectively. The ML samples consist of six layers covering the full compositional range starting from a pure AlN layer and followed by additional Al 1-x In x N layers where the In content increases for each layer until a pure InN layer is accomplished.…”

Section: Methodsmentioning

confidence: 99%

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Effect of strain on low-loss electron energy loss spectra of group-III nitrides

et al. 2011

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Thin films of AlN experiencing different strain states were investigated with a scanning transmission electron microscope (STEM) by low-loss electron energy loss spectroscopy (EELS). The results conclude that the low-loss properties and in particular, the plasmon peak position is shifted as a direct consequence of the inherent strain of the sample. The results reveal that strain, even minor levels, can be measured by STEM-EELS. These results were further corroborated by full potential calculations and expanded to include the similar III nitrides GaN and InN. It is found that a unit-cell volume change of 1% results in a bulk plasmon peak shift of 0.159, 0.168, and 0.079 eV for AlN, GaN, and InN, respectively, according to simulations. The AlN peak shift was experimentally corroborated with a corresponding peak shift of 0.156 eV. The unit-cell volume is used here since it is found that regardless of in-and out-of-plane lattice augmentation, the low-loss properties appear near identical for constant volume. These results have an impact on the interpretation of the plasmon energy and its applicability for determining and separating stress and composition. It is found that while the bulk plasmon energy can be used as a measure of the composition in a group-III nitride alloy for relaxed structures, the presence of strain significantly affects such a measurement. The strain is found to have a lower impact on the peak shift for Al 1-x In x N (∼3% compositional error per 1% volume change) and In 1-x Ga x N alloys compared to significant variations for Al 1-x Ga x N (16% compositional error for 1% volume change). Hence a key understanding in low-loss studies of III nitrides is that strain and composition are coupled and affect one another.

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Section: Discussionmentioning

confidence: 96%

Section: Methodsmentioning

confidence: 99%

Effect of strain on low-loss electron energy loss spectra of group-III nitrides

et al. 2011

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“…Total superlattice thickness was kept constant at 240 nm, while the number of periods was varied between 15 and 30 for Λ=16 and Λ=8 nm, respectively. InyAl1-yN in-plane lattice constants were obtained using Vegard's rule, based on a study of magnetron sputtered InN by Hsiao et al [22]. Concentrations x and y were chosen such that the in-plane lattice mismatch δ=(aScAlN-aInAlN)/aInAlN varied from -3% to + 7% throughout the deposition series.…”

Section: Methodsmentioning

confidence: 99%

“…The more Sc is incorporated in the ScxAl1-xN/AlN superlattice, the larger the lattice mismatch becomes, laterally compressing the ScxAl1-xN layers more and more if non-relaxed epitaxy is sustained. On the other hand, if the in-plane lattice parameter of InyAl1-yN is tune [22], lattice match to ScxAl1-xN can be achieved, or, in the case of In-rich InyAl1-yN, tensile biaxial stress can be induced in ScxAl1-xN during the initial stages of the growth. However, as the individual stress and strain states in the ScxAl1-xN layers are unknown, we will refer only to the lattice mismatch further on.…”

Section: Ab Initio Calculations Show That the Structural Properties Omentioning

confidence: 99%

Stabilization of wurtzite Sc0.4Al0.6N in pseudomorphic epitaxial Sc Al1−N/In Al1−N superlattices

et al. 2015

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Pseudomorphic stabilization in wurtzite ScxAl1-xN/AlN and ScxAl1-xN/InyAl1-yN superlattices (x=0.2, 0.3, and 0.4; y=0.2-0.72), grown by reactive magnetron sputter epitaxy was investigated. X-ray diffraction and transmission electron microscopy show that in ScxAl1-xN/AlN superlattices the compressive biaxial stresses due to positive lattice mismatch in Sc0.3Al0.7N and Sc0.4Al0.6N lead to the loss of epitaxy, although the structure remains layered.For the negative lattice mismatched In-rich ScxAl1-xN/InyAl1-yN superlattices, a tensile biaxial stress promotes the stabilization of wurtzite ScxAl1-xN even for the highest investigated concentration x=0.4. Ab initio calculations with fixed in-plane lattice parameters show a reduction in mixing energy for wurtzite ScxAl1-xN under tensile stress when x≥0.375 and corroborate the experimental results.

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“…[11,12] The Thin Film Physics Division at Linköping University has a long history of employing and developing magnetron sputter epitaxy (MSE) technique, being one among only a few groups that use it successfully for the growth of group III-nitrides semiconductors. This knowledge gained by years of researching sputtering processes in ultrahigh vacuum (UHV) systems, conducted to the development of wurtzite III-nitrides semiconductors which include thin films, [13][14][15] but also nanostructures like: nanorods, [16,17] nanospirals, [18] or nanograss. [19] …”

Section: Introductionmentioning

confidence: 99%

Magnetron Sputter Epitaxy of Group III-Nitride Semiconductor Nanorods

Serban¹

2017

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The III-nitride semiconductors family includes gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and related ternary and quaternary alloys. The research interest on this group of materials is sparked by the direct bandgaps, and excellent physical and chemical properties. Moreover, the ternary alloys (InGaN, InAlN and AlGaN) present the advantage of bandgap tuning, giving access to the whole visible spectrum, from near infrared into deep ultraviolet wavelengths. The intrinsic properties of III-nitride materials can be combined with characteristical features of nanodimension and geometry in nanorod structures. Moreover, nanorods offer the advantage of avoiding problems arising from the lack of native substrates, like lattice and thermal expansion, film -substrate mismatch.The growth and characterization of group III-nitride semiconductos nanorods, namely InAlN and GaN nanorods, is presented in this thesis. All the nanostructures were grown by employing direct-current reactive magnetron sputter epitaxy. InxAl1−xN self-assembled, core-shell nanorods on Si (111) substrates were demonstrated. A comprehensive study of temperature effect upon the morphology and composition of the nanorods was realized. The radial nanorod heterostructure consists of In-rich cores surrounded by Al-rich shells with different thicknesses. The spontaneous formation of core-shell nanorods is suggested to originate from phase separation due to spinodal decomposition. As the growth temperature increase, In desorption is favored, resulting in thicker Al-rich shells and larger nanorod diameters.Both self-assembled and selective-area grown GaN nanorods are presented.

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Room-temperature heteroepitaxy of single-phase Al1−xInxN films with full composition range on isostructural wurtzite templates

Cited by 28 publications

References 48 publications

Effect of strain on low-loss electron energy loss spectra of group-III nitrides

Effect of strain on low-loss electron energy loss spectra of group-III nitrides

Stabilization of wurtzite Sc0.4Al0.6N in pseudomorphic epitaxial Sc Al1−N/In Al1−N superlattices

Magnetron Sputter Epitaxy of Group III-Nitride Semiconductor Nanorods

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