Room-temperature InAsSb photovoltaic detectors for mid-infrared applications

Growth of InAsSb/InPSb heterojunctions for mid-IR detector applications

“…The room-temperature R 0 A products (Table 1) of the devices with a wider bandgap InPSb barrier layer show some improvement over the InAsSb homojunction devices. These values are comparable to the previously reported data [11,12] for InAsSb photodetectors with AlInAsSb barrier layers. The dependence of the room-temperature zero-bias resistance of InPSb/InAsSb diodes on device size is plotted in Fig.…”

The Composition Effect on the Dynamics of Electrons in Sb-Based QD-SOAs

“…Mid-to-far-infrared wavelength range (2000-30000 nm) has a variety of applications including remote sensing, medical diagnostic, free-space optical communications, atmospheric pollution monitoring, chemical sensing, thermal imaging, high power and midinfrared light sources [6]. Although HgCdTe material is already used to build devices working at these ranges, it suffers from slow response, high-power dissipation and undesired noise [7].…”

Monolithic Integration of an Active InSb-Based Mid-Infrared Photopixel With a GaAs MESFET

“…All authors are with the Electronics and Nanoscale Division in the School of Engineering at the University of Glasgow, Glasgow G12 8LT, U.K. band gap or unique band-structure alignments [2][3][4]. In order to make an imaging device, such as a focal plane array (FPA), it is required that the photodiodes must be individually addressable using row and column decoding.…”