Room-temperature interface state analysis of Au/Poly(4-vinyl phenol)/p-Si structure

Kavasoğlu, Neşe; Tozlu, Cem; Pakma, Osman; Kavasoğlu, A. Sertap; Özden, Şadan; Metin, Bengül; Birgi, Ozcan; Oktik, Ş.

doi:10.1016/j.synthmet.2009.06.015

Cited by 32 publications

(6 citation statements)

References 28 publications

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“…In the literature, n greater than unity (>2) is found [8]. For the reverse bias voltage region, a semi-log plot shows a clear discrepancy in current when diode is illuminated at 150 mW/cm².…”

Section: Preparation and Measurementsmentioning

confidence: 82%

Synthesis and properties of Au/PVP/p-Si/Al heterojunction diode

Benhaliliba

Ocak

Mokhtari

et al. 2014

2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)

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Properties of heterojunction diodes having polyvinyl pyrrolidone (PVP) on p-Si substrate are investigated. PVP layer has grown onto p type silicon substrate via the sol gel spin coating route @ 2000 rpm. The Front contacts have been thermally evaporated in vacuum onto the organic layer at low pressure of 10-6 T, having a diameter of 1.5 mm and a thickness around 250 ± 10 nm. In this research, the electronic parameters of Au/PVP/p-Si/Al structures have been investigated. The obtained values indicate that the electronic parameters of the diode, like ideality factor (n), saturation current, barrier height (Φ B ), and rectification coefficient (R) are respectively found to be (in dark) 2.2, 0.8 µA, 0.61 V, and 1.85x10 4 . The open circuit voltage V OC is about 0.2 V. A non-diode ideal behavior is observed and ideality factor exceeds the unity (n>5). Consequently, V OC only depends on the solar cell material. We fabricate the device in the aim to use it in solar cell, photodiode and photoconductor applications.

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Section: Preparation and Measurementsmentioning

confidence: 82%

Synthesis and properties of Au/PVP/p-Si/Al heterojunction diode

Benhaliliba

Ocak

Mokhtari

et al. 2014

2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)

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“…The Si wafers are washed with acetone and isopropanol, followed by mild base piranha wash, and then finally cleaned with plenty of deionized water. [47,48] OFETs (Bottom-gate/top-contact) is fabricated on heavily n + + -doped silicon substrates as a gate electrode (capacitance, C i = 8.3 nF) over which a thermally grown layer of SiO 2 (~300 nm) acts as the gate insulator. The semiconducting films were fabricated using the spin-coating technique.…”

Section: Ofet Characteristicsmentioning

confidence: 99%

High‐Performance Organic Field‐effect Transistors from Functionalized Zinc Meso‐Porphyrins

et al. 2022

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A series of new zinc porphyrins were synthesized, and their charge transport property was tuned by introducing various groups. Triarylamine was introduced to the porphyrin moiety at the meso‐position as an electron donor, enhancing the charge carrier mobility. All the synthesized zinc porphyrins are thermally stable with a decomposition temperature over 178 °C. High frontier molecular orbitals levels of these compounds make them stable donor materials. SEM analysis of zinc porphyrins fabricated by spin‐coating resulted in diversely self‐assembled films. Field‐effect transistors were fabricated using bottom‐gate/top‐contact architecture (BGTC) by solution‐processable technique. The higher charge carrier mobility of 5.17 cm2/Vs with on/off of 106 was obtained for trifluoromethyl substituted compound due to better molecular packing. In addition, GIXRD analysis revealed zinc porphyrins films crystalline nature, which supports its better charge carrier mobility. The present investigation has validated that zinc porphyrin building blocks are an attractive candidate for p‐channel OFET devices.

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“…şeklinde ifade edilebilir. Burada ters besleme doyma akımı, Boltzman sabiti, mutlak sıcaklık, seri direnç etkileri ve diyot için ideal davranıştan ne kadar uzak olduğunu gösteren idealite faktörüdür [5][6][7][8], Bu ifade göz önüne alınarak yüksek voltajlardaki seri direnç etkilerinin belirlenmesi için Norde'den başlayarak farklı yöntemler geliştirilmiş ve kullanılmıştır [9][10]. Bu yöntemlerin en yaygın kullanılanlarından biri Cheung yöntemidir [11] Grafik incelendiğinde seri direnç, Rs değerlerinin 70 -110 Ω arasında değerler aldığı ve iki farklı Cheung modelinin neredeyse tüm sıcaklıklarda aynı Rs değerlerini verdiği görülmektedir.…”

Section: Araştırma Bulgularıunclassified

Schottky diyot tabanlı UV detektörlerde seri direnç etkileri

Özden¹

2019

Balıkesir Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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Bu çalışmada GaN tabanlı UV algılayıcı GUVA S12SD Schottky diyotun sıcaklık bağımlı akım-voltaj karakteristikleri seri direnç etkileri yönünden incelenmiştir. Bu amaçla FPGA tabanlı, basit ve düşük maliyetli bir ölçüm sistemi hazırlanarak, başarıyla kullanılmıştır. Sonuçlar, aygıtın akım iletim mekanizmasının termiyonik yayılımla açıklanabileceğini göstermektedir. Seri direnç hesapları için iki farklı yöntem kullanılmış ve birbiri ile büyük uyuma sahip sonuçlar elde edilmiştir. İdealite faktörü ve seri direncin sıcaklık bağımlılığından, ara yüzeydeki durumların ve buradaki yük taşıyıcılarının aygıt karakteristikleri üzerinde etkin olduğu belirlenmiştir.

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Room-temperature interface state analysis of Au/Poly(4-vinyl phenol)/p-Si structure

Cited by 32 publications

References 28 publications

Synthesis and properties of Au/PVP/p-Si/Al heterojunction diode

Synthesis and properties of Au/PVP/p-Si/Al heterojunction diode

High‐Performance Organic Field‐effect Transistors from Functionalized Zinc Meso‐Porphyrins

Schottky diyot tabanlı UV detektörlerde seri direnç etkileri

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