Room-temperature laser cathode-ray tube based on an ZnCdSe/ZnSe superlattice

Basov, N.G.; Dianov, Evgenii M; Козловский, В. И.; Krysa, A. B.; Насибов, А. С.; Popov, Yurii M; Prokhorov, A M; Trubenko, P.A.; Shcherbakov, E A

doi:10.1070/qe1995v025n08abeh000454

Cited by 21 publications

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“…Introduction Distributed Bragg reflectors (DBRs) on transparent substrates are promising for light-emitting diodes with microcavity and vertical cavity surface emitting lasers, in particular for longitudinally pumped electron beam lasers [1]. To date, high reflectivity (R) II-VI DBRs grown by MOVPE have been obtained only on opaque GaAs substrates [2][3][4].…”

mentioning

confidence: 99%

MOCVD Growth of ZnSe/ZnS Distributed Bragg Reflectors on ZnSe(100) and GaAs(100) Substrates

Кузнецов

Jitov

Zakharov

et al. 2002

phys. stat. sol. (b)

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b) P. N. Lebedev Physical Institute, Russian Academy of Sciences, 53 Leninskii pr.,The possibility to increase the reflectivity of ZnS/ZnSe distributed Bragg reflectors (DBR) grown on GaAs(100) and ZnSe(100) substrates was studied by using metallorganic chemical vapour deposition (MOCVD) technique. As a result of growth optimization, a maximum reflectivity of the DBR mirror on GaAs substrate as high as 99% was achieved at a wavelength of 478 nm. The maximum reflectivity of the 20-pair ZnS/ZnSe DBR stack on transparent ZnSe substrate was 91% at wavelength of 495 nm while the transmission coefficient was 5% at maximum reflectivity. Scattering by surface roughness limited the increase of the ZnS/ZnSe DBR mirror reflectivity in this case. The ZnCdSe/ZnSe QW structure grown on the ZnS/ZnSe DBR mirror showed intense low temperature cathodoluminescence.Introduction Distributed Bragg reflectors (DBRs) on transparent substrates are promising for light-emitting diodes with microcavity and vertical cavity surface emitting lasers, in particular for longitudinally pumped electron beam lasers [1]. To date, high reflectivity (R) II-VI DBRs grown by MOVPE have been obtained only on opaque GaAs substrates [2][3][4]. In [2] R ¼ 91.2% was achieved at l ¼ 479 nm by using 10 pairs of ZnS/ZnSe alternating layers with a high difference of optical indices Dn > 0.3 in the blue spectral range. It is necessary to take into account that the real reflectivity of such a mirror has to be smaller than 80% if light passes through it from a microcavity based on ZnSe. However, the DBR surface was too rough to obtain higher reflectivity by increasing the number of pairs. The use of ZnMgS [3] and a superlattice of ZnSe/MgS [4] instead of ZnS did not lead to the necessary increase of the reflectivity of the BDR mirror. The surface roughness (RMS ¼ 14 nm) stayed too high. Moreover, the DBR had many defects due to strong lattice mismatching of ZnS and ZnSe layers or poor stability of cubic phase of ZnMgS and MgS layers. Therefore, there is a problem to grow qualitative active layers on such DBRs. In [4] only passive microcavity with II-VI DBR was demonstrated. Up to the present II-VI monolithic microcavity light emitting diodes (LED) were realized only by MBE technique [5]. However, the reflectivity of DBR mirrors was not high enough.When ZnSe was used as transparent substrate for the DBR, a maximum reflection coefficient of only 80% was achieved [6]. This result was obtained on ZnCdSe/ZnMgSe

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confidence: 99%

MOCVD Growth of ZnSe/ZnS Distributed Bragg Reflectors on ZnSe(100) and GaAs(100) Substrates

Кузнецов

Jitov

Zakharov

et al. 2002

phys. stat. sol. (b)

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“…The sample was then glued by epoxy to a sapphire holder and the GaAs substrate and buffer removed by polishing, followed by etching in KOH-NH 3 …”

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confidence: 99%

“…Consequently, it has therefore been proposed that multi-quantum well (MQW) lasers would have lower thresholds and higher output powers. Initially, MQW lasers with scanning e-beam longitudinal pumping (an analogue of VCSEL with injection pumping) were realized in the blue-green spectral range using MBE grown structures with 100-150 ZnCdSe/ZnSe QWs [3][4][5]. However, the threshold of these lasers was comparable to bulk lasers and high output powers were difficult to achieve.…”

Section: Introductionmentioning

confidence: 99%

Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/AlGaInP MQW structure

Bondarev

Kozlovsky

Krysa

et al. 2004

Journal of Crystal Growth

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“…Elimination of requirements to p doping is especially essential for wide band gap semiconductor structures formed based on Group II-VI and III-V elements. Electron energy in electron beam pumping is relatively high, namely, 5-100 keV [1,2]. The necessity of using such energies is associated with low efficiency of penetra tion of the electron beam into the solid.…”

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confidence: 99%

Field injection of low-energy electrons into the ZnSe/CdSe/ZnSe heterostructure with the use of an ultra-high-vacuum tunneling microscope

et al. 2012

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In lasers with electron beam pumping, the semi conductor crystal transforms the energy of the acceler ated electron beam into the laser emission with a wavelength corresponding to the band gap of the used semiconductor. Pumping with the fast electron beam is a universal method of lasing in semiconductor mate rials with any band gap E g and any starting resistivity. Such lasers make it possible to generate optical pulses with a power of several tens of megawatts in a broad spectral range from the mid IR to near UV range.The main advantage of the lasers with electron beam pumping is in the absence of necessity of doping the used semiconductor materials. Elimination of requirements to p doping is especially essential for wide band gap semiconductor structures formed based on Group II-VI and III-V elements. Electron energy in electron beam pumping is relatively high, namely, 5-100 keV [1,2]. The necessity of using such energies is associated with low efficiency of penetra tion of the electron beam into the solid. Upon varying the energy of electrons from 10 to 200 keV, their effec tive penetration depth varies from 1 to 60 μm [3]. The active region of the laser with transverse electron beam pumping is usually arranged at a distance of several micrometers from the surface. It was shown as a result of numerous experimental investigations of impact ionization [4, 5] that average energy 〈E〉 necessary for the formation of one pair of carriers under the effect of the primary electron is determined only by the band gap of semiconductor 〈E〉 ≈ 3E g . Therefore, electrons with an energy of several tens and hundreds of kilo electronvolts possess the deliberately excessive energy.The use of high energy electrons causes the problems associated with carrier thermalization to equilibrium temperatures. This leads to nonuniform heating of the crystal lattice, appearance of local mechanical stresses, and overheating of the quasi equilibrium electron-hole plasma (which appears during pair Coulomb collisions) in the active region of the laser [3]. A decrease in the excessive energy of the electron beam eliminates the problems associated with the sub sequent thermalization and, as a consequence, leads to a decrease in the threshold current density. In recent time, a stable tendency to decreasing the pump elec tron beam energy is observed. The use of the miniature field electron source in [6] made it possible to fabricate compact lasers operating at beam energies of 7-10 keV in the near IR range at 90-300 K.In this work, we evaluated the efficiency of the use of the low voltage field electron emission for electron beam pumping. As the electron source, the metal probe of an LS SPM ultra high vacuum probe micro scope (OMICRON) is used. The probe of the ultra high vacuum scanning tunneling microscope (STM) is moved closer to the heterostructure under study to a distance of several nanometers. With the negative bias voltage of several volts supplied to the metal probe, field electron emission from the metal surface appears under the effect of...

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Room-temperature laser cathode-ray tube based on an ZnCdSe/ZnSe superlattice

Cited by 21 publications

References 1 publication

MOCVD Growth of ZnSe/ZnS Distributed Bragg Reflectors on ZnSe(100) and GaAs(100) Substrates

MOCVD Growth of ZnSe/ZnS Distributed Bragg Reflectors on ZnSe(100) and GaAs(100) Substrates

Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/AlGaInP MQW structure

Field injection of low-energy electrons into the ZnSe/CdSe/ZnSe heterostructure with the use of an ultra-high-vacuum tunneling microscope

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