Room Temperature Light Emission from the Low-Dimensional Semiconductors AZrPS<sub>6</sub> (A = K, Rb, Cs)

Banerjee, Santanu; Szarko, Jodi M.; Yuhas, Benjamin D.; Malliakas, Christos D.; Chen, Lin X.; Kanatzidis, Mercouri G.

doi:10.1021/ja1004653

Cited by 43 publications

(47 citation statements)

References 61 publications

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“…Group 15 chalcogenides are very interesting not only because of their potential application as thermoelectric materials, such as Sb 2 Te 3 [1], AgPb 18 SbTe 20 [2], Mo 3 Sb 5 Te 2 [3], and AgSb x Bi 3−x S 5 [4], and nonlinear optical materials, such as AAsQ 2 (A = Li, Na; Q = S, Se) [5,6], A 3 Ta 2 AsS 11 (A = K, Rb) [7], AZrPQ 6 (A = K, Rb, Cs; Q = S, Se) [8,9], but also because of their structural diversity [10], which arises partly from the various local coordination environments centered by group 15 elements. Unlike its heavier homologues Sb and Bi, trivalent arsenic exhibits a remarkable reluctance to adopt hypervalent coordination polyhedra in its chalcogenido anions [11,12].…”

Section: Introductionmentioning

confidence: 99%

Synthesis, crystal structures, and optical properties of NaCdPnS3 (Pn=As, Sb)

Bensch

2012

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Synthesis, crystal structures, and optical properties of NaCdPnS3 (Pn=As, Sb)

Bensch

2012

Journal of Alloys and Compounds

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“…[6] These are the compounds AZrPS 6 (A = K, Rb, Cs). They crystallize in two different polymorphic forms, a-and b-AZrPS 6 .…”

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“…The two polymorphs crystallize in similar structures. [6,7] In each case anionic 1/1[ZrPS 6 ] À chains are formed along the a axis (Figure 2 c), which are linked through the alkali-metal ions (Figure 2 b). The Zr 4+ ions are in each case coordinated in a distorted bicapped trigonal-prismatic fashion by S atoms and are also connected by corner-sharing PS 4 units.…”

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Luminescent Semiconductors

Wickleder

2010

Angew Chem Int Ed

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The investigation of the optical properties of inorganic solids is currently a very topical theme, not least because of the dramatic changes being made in the use of illuminants. In fact, the energy saved by replacing incandescent bulbs and even energy-saving lamps with the highly efficient light-emitting diodes (LEDs) is considerable, [1,2] since approximately 20 % of the electric energy is used for illumination purposes. In this context two different technologies are employed to produce white light: [3] either three semiconductor diodes in the colors blue/green/red are used (multi-chip LED), or a blue diode is coated with a yellow phosphor (usually Ce-YAG; Figure 1) or with a green and red phosphor (phosphor-converted LEDs). In each case the primary radiation is brought about by semiconductor luminescence. Semiconductors that emit efficiently in the long wavelength range have been known for some time, yet surprisingly the great breakthrough in their use in lighting technology did not come until the semiconductor Ga/InN, which emits in the near UV/blue/green range, was developed in the 1990s.[4] For other applications too, such as display backlighting, general and medical sensor technology, or photovoltaics, luminescent inorganic semiconductors are the future materials of choice owing to their usually hightemperature and long-term stability, environmental tolerance, and their non-toxicity.From a chemical materials viewpoint the number of semiconductor materials with a large band gap used in the optical area is, however, rather limited.[5] Normally these are typically binary II/VI or III/V semiconductors or their mixed crystals. Thus ZnO, ZnS, and CdS have been investigated thoroughly at a relatively early stage, whereas today III/V semiconductors are more likely to be used. GaN, which emits in the near-UV (NUV) range at a wavelength of 364 nm, is particularly suitable for applications with short wavelength emissions. Moreover, there is an adequately efficient emission since unlike GaP, GaN is a direct band-gap emitter, that is, the transition takes place with conservation of momentum. With indirect emitters, the electrons in the conduction band have a different momentum than the holes in the valence band, the transitions are therefore forbidden, and such materials are unsuitable for applications as illuminants. In addition, GaN is relatively insensitive towards defects so that a high efficiency can also be achieved with a high defect concentration. Substitution of some of the Ga ions by In leads to a decrease of the band gap so that depending on the In content blue and green light-emitting diodes, up to an emission wavelength of l max = 540 nm, can be obtained (Figure 1).Modern red and yellow LEDs also contain III/V semiconductor compounds, for example, (AlGaIn)P, in which the wavelength can be varied by variation of the cation ratio. At 650 nm an internal efficiency of almost 100 % is achieved, which however, falls considerably at shorter wavelengths. Moreover, to date it is not possible to obtain efficient hig...

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“…[5] In Halbleiter mit großer Bandlücke beschrieben haben. [6] Dabei handelt es sich um die Verbindungen AZrPS 6 (A = K, Rb, Cs). Diese kristallisieren in zwei unterschiedlichen Polymorphen, a-und b-AZrPS 6 .…”

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“…[6,8] Die optischen Eigenschaften der Verbindungen sind äu-ßerst bemerkenswert. Die Absorptionsspektren zeigen einen steilen Anstieg bei der gleichen Energie, unabhängig vom Alkalimetallion und von der Struktur, was einer Bandlücke von ungefähr 2.1 eV (17 000 cm À1 ) entspricht (Abbildung 3 a), in Einklang mit der orangenen Farbe der Verbindungen.…”

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Leuchtende Halbleiter

Wickleder

2010

Angewandte Chemie

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Room Temperature Light Emission from the Low-Dimensional Semiconductors AZrPS₆ (A = K, Rb, Cs)

Cited by 43 publications

References 61 publications

Synthesis, crystal structures, and optical properties of NaCdPnS3 (Pn=As, Sb)

Synthesis, crystal structures, and optical properties of NaCdPnS3 (Pn=As, Sb)

Luminescent Semiconductors

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Room Temperature Light Emission from the Low-Dimensional Semiconductors AZrPS6 (A = K, Rb, Cs)

Cited by 43 publications

References 61 publications

Synthesis, crystal structures, and optical properties of NaCdPnS3 (Pn=As, Sb)

Synthesis, crystal structures, and optical properties of NaCdPnS3 (Pn=As, Sb)

Luminescent Semiconductors

Leuchtende Halbleiter

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Room Temperature Light Emission from the Low-Dimensional Semiconductors AZrPS₆ (A = K, Rb, Cs)