Room-temperature magnetoresistance in magnetic tunnel junctions with Fe3O4 electrode

Kado, Tetsuo; Saito, H.; Ando, Koji

doi:10.1063/1.2713045

Cited by 13 publications

(14 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The P value of material can be evaluated from a TMR ratio using Julliere's formula. 13 However, it is very sensitive to interface states at the ferromagnet/insulator interfaces in MTJ, [14][15][16] making it difficult to determine the P value. Also, the sign of b cannot be determined from a conductance curve in the PCAR measurement.…”

Section: Introductionmentioning

confidence: 99%

Negative spin polarization at the Fermi level in Fe4N epitaxial films by spin-resolved photoelectron spectroscopy

Ito

Okamoto

Harada

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

Related Articles Electronic band structure and optical phonons of BaSnO3 and Ba0.97La0.03SnO3 single crystals: Theory and experiment J. Appl. Phys. 112, 044108 (2012) Electronic, structural, and elastic properties of metal nitrides XN (X = Sc, Y): A first principle study AIP Advances 2, 032163 (2012) Effects of strain, d-band filling, and oxidation state on the surface electronic structure and reactivity of 3d perovskite surfaces

show abstract

Section: Introductionmentioning

confidence: 99%

Negative spin polarization at the Fermi level in Fe4N epitaxial films by spin-resolved photoelectron spectroscopy

Ito

Okamoto

Harada

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Even though very high P values (-80 %) have been observed in epitaxial magnetite films [5], the possibility to obtain full spin polarization in this material is still disputed [4,6]. The large number of recent publications on this topic underlines the high interest in this material [5][6][7][8][9][10][11][12][13][14][15][16], but the practical achievement of (the expected) high performances in functional spintronic devices like magnetic tunnel junctions (MTJ) incorporating Fe 3 O 4 has not been reached yet [9][10][11]13].…”

Section: Introductionmentioning

confidence: 99%

“…Thin Fe 3 O 4 films are mainly produced by pulsed laser deposition [10][11][12][13], magnetron sputtering [7-9, 14, 15], and molecular beam epitaxy [16]. We propose a simple and cost-effective method for growing magnetite thin films based on a chemical vapour deposition (CVD) process [17].…”

Section: Introductionmentioning

confidence: 99%

CVD synthesis of polycrystalline magnetite thin films: structural, magnetic and magnetotransport properties

Mantovan¹,

Lamperti²,

Georgieva³

et al. 2010

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Abstract. Magnetite (Fe 3 O 4 ) is predicted to be half metallic at room temperature and it shows the highest Curie temperature among oxides. The use of Fe 3 O 4 thin films is therefore promising for spintronic devices such as magnetic tunnel junctions and magnetoresistive sensors. The structural, magnetic, and magnetotransport properties of magnetite are reported to be strongly dependent on the growth conditions. We have developed a very simple deposition chamber for growing thin magnetite films via a chemical vapor deposition process based on the Fe 3 (CO) 12 carbonyl precursor. The structural, morphological and magnetic properties of the as deposited Fe 3 O 4 films have been investigated by means of time of flight secondary ion mass spectrometry, grazing incidence X-ray diffraction, X-ray reflectivity, atomic force microscopy, conversion electron Mössbauer spectroscopy, and superconducting quantum interference device magnetometry. Magnetotransport measurements show magnetoresistance up to -2.4% at room temperature at the maximum applied field of 1.1 T.Resistivity measurements in the 100-300 K temperature range reveal that the magnetotransport properties of the Fe 3 O 4 films are governed by inter-granular tunneling of the spin polarized electrons.The spin polarization is estimated to be around -16%. A possible route for increasing the spinpolarized performances of our magnetite films is proposed. We have also deposited Fe 3 O 4 /MgO/Co stacks by using a combined chemical vapor-and atomic layer-deposition process. The trilayer's hysteresis curve evidences the presence of two distinct switching fields making it promising for magnetite-based magnetic tunnel junction applications.

show abstract

“…These unexpectedly small negative MR ratios may be due to the difficulty of preparing Fe 3 O 4 /insulator interfaces. An earlier study experimentally investigating fully epitaxial Fe 3 O 4 / MgO / CoFe MTJs with MgO barrier layer grown at RT obtained a MR ratio of −14% at 293 K. 7 Although this negative MR ratio is the largest RT value that has been reported, in that study, normal MTJs with positive MR ratios up to 10% were also found on the same wafer. Because the sign of the MR ratio is affected by other iron oxides in the vicinity of the interface, such as ferromagnetic ␥-Fe 2 O 3 ͑Ref.…”

mentioning

confidence: 68%

Large room-temperature inverse magnetoresistance in tunnel junctions with a Fe3O4 electrode

Kado

2008

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

Magnetic tunnel junctions ͑MTJs͒ consisting of Fe 3 O 4 and three-dimensional ferromagnetic metal electrodes with MgO or MgO / Al 2 O 3 as a barrier layer have been fabricated. Fe 3 O 4 / MgO͑5 nm͒ / Al 2 O 3 ͑1 nm͒ / CoFe MTJs had room-temperature ͑RT͒ magnetoresistance ͑MR͒ ratios ranging from −26% to 18%, and Fe 3 O 4 / MgO͑6 nm͒ / CoFe MTJs with a mildly heat-treated Fe 3 O 4 / MgO interface had only inverse tunneling MR ratios that were as large as −8% at RT. The sign of the MR ratio changed when the absolute value of the bias voltage V was about 1 V, and normal MR was evident when ͉V͉ Ͼ 1 V because the nontunneling current was dominant.

show abstract

Room-temperature magnetoresistance in magnetic tunnel junctions with Fe3O4 electrode

Cited by 13 publications

References 15 publications

Negative spin polarization at the Fermi level in Fe4N epitaxial films by spin-resolved photoelectron spectroscopy

Negative spin polarization at the Fermi level in Fe4N epitaxial films by spin-resolved photoelectron spectroscopy

CVD synthesis of polycrystalline magnetite thin films: structural, magnetic and magnetotransport properties

Large room-temperature inverse magnetoresistance in tunnel junctions with a Fe3O4 electrode

Contact Info

Product

Resources

About