2022
DOI: 10.1039/d2na00442a
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Room-temperature magnetoresistance in Ni78Fe22/C8-BTBT/Ni78Fe22 nanojunctions fabricated from magnetic thin-film edges using a novel technique

Abstract: The paper presents room-temperature magnetoresistance in molecular spintronic nanodevices fabricated using magnetic thin-film edges.

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Cited by 3 publications
(1 citation statement)
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“…In particular, NiFe (Permalloy) is a material with excellent properties such as high relative permeability, low coercivity, and near-zero magnetostriction, and it is widely used in fields such as magnetic shielding and magnetic sensors. In recent years, magnetic tunnel junctions (MTJs) and spin valves (SVs), stacks of magnetic layers with insulators, metal layers, or molecular materials, have attracted significant attention for application in highly sensitive magnetic sensors and magnetic memory (storage) devices that leverage their unique magnetoresistance and magnetocapacitance effects. However, the formation of microelectrodes on these magnetic devices requires not only the precise fabrication of electrodes with nanoscale precision but also extra work to remove the oxide layer of a few nm formed on the NiFe surface by additional dry/wet etching or annealing processes . Therefore, for the formation of micro- and nano-sized spintronics devices, it is important to have a technology to easily fabricate microelectrodes that exhibit good conductivity at the desired position on the device with nanoscale precision.…”
Section: Introductionmentioning
confidence: 99%
“…In particular, NiFe (Permalloy) is a material with excellent properties such as high relative permeability, low coercivity, and near-zero magnetostriction, and it is widely used in fields such as magnetic shielding and magnetic sensors. In recent years, magnetic tunnel junctions (MTJs) and spin valves (SVs), stacks of magnetic layers with insulators, metal layers, or molecular materials, have attracted significant attention for application in highly sensitive magnetic sensors and magnetic memory (storage) devices that leverage their unique magnetoresistance and magnetocapacitance effects. However, the formation of microelectrodes on these magnetic devices requires not only the precise fabrication of electrodes with nanoscale precision but also extra work to remove the oxide layer of a few nm formed on the NiFe surface by additional dry/wet etching or annealing processes . Therefore, for the formation of micro- and nano-sized spintronics devices, it is important to have a technology to easily fabricate microelectrodes that exhibit good conductivity at the desired position on the device with nanoscale precision.…”
Section: Introductionmentioning
confidence: 99%