Room temperature NO2 sensing performance of free-standing mesh-structure vanadium dioxide nanorods by a chemical vapour deposition method

Liang, Jiran; Li, Wenjiao; Liu, Junfeng; Hu, Ming

doi:10.1016/j.jallcom.2016.06.142

Cited by 29 publications

(16 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The TEM image in Figure 11 c demonstrates a smooth surface and a monoclinic structure of VO 2 NWs. Similarly, Liang et al [ 84 ] synthesized free-standing VO 2 NWs by using rough surfaces of a ceramic substrate, as shown in Figure 11 e. The preparation schematic diagram of VO 2 NWs is shown in Figure 11 d. V 2 O 5 powder was employed as the evaporation source and was uniformly placed on a rough-surface substrate. The substrate for depositing products was placed in the range of 0.5 cm from the evaporation source.…”

Section: Methods For the Growth Of Vo 2 Nanostrmentioning

confidence: 99%

Section: The Growth Of Vo 2 Nanowires (Nws)mentioning

confidence: 98%

“…( g ) Nucleation and evolution of nanostructures in precursor droplets. Reproduced from [ 84 ], with permission from Elsevier, 2016.…”

Section: Figurementioning

confidence: 99%

See 2 more Smart Citations

Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives

et al. 2021

View full text Add to dashboard Cite

Vanadium dioxide (VO2) is a typical metal-insulator transition (MIT) material, which changes from room-temperature monoclinic insulating phase to high-temperature rutile metallic phase. The phase transition of VO2 is accompanied by sudden changes in conductance and optical transmittance. Due to the excellent phase transition characteristics of VO2, it has been widely studied in the applications of electric and optical devices, smart windows, sensors, actuators, etc. In this review, we provide a summary about several phases of VO2 and their corresponding structural features, the typical fabrication methods of VO2 nanostructures (e.g., thin film and low-dimensional structures (LDSs)) and the properties and related applications of VO2. In addition, the challenges and opportunities for VO2 in future studies and applications are also discussed.

show abstract

Section: Methods For the Growth Of Vo 2 Nanostrmentioning

confidence: 99%

Section: The Growth Of Vo 2 Nanowires (Nws)mentioning

confidence: 98%

See 1 more Smart Citation

Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives

et al. 2021

View full text Add to dashboard Cite

show abstract

“…[15][16][17][18][19] Some VO 2 nanowire-based transistors, sensors, and thermal detectors are based on unique MIT characteristics and can work at near room temperature. [20][21][22] For 1D nanowires and heterostructures, nanoscale chemical engineering is generally required to manipulate multifunctional characteristics (e.g., band alignment, carrier transport, etc.) toward functional nanomaterials and devices.…”

mentioning

confidence: 99%

“…1D VO 2 nanowires or nanobeams are with near‐perfect crystalline structures and have shown promises in condensed matter physics and advanced devices . Some VO 2 nanowire‐based transistors, sensors, and thermal detectors are based on unique MIT characteristics and can work at near room temperature . For 1D nanowires and heterostructures, nanoscale chemical engineering is generally required to manipulate multifunctional characteristics (e.g., band alignment, carrier transport, etc.)…”

mentioning

confidence: 99%

Modulated Metal–Insulator Transition Behaviors in Vanadium Dioxide Nanowires with an Artificial Oxidized Domain

Wei

Huang

Wang

et al. 2019

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

Correlated vanadium dioxide (VO2) has shown promises in functional materials and advanced electronic devices with outstanding metal–insulator transition (MIT). The manipulations of MIT and structural phase transition in correlated oxides are among the major challenges in both fundamental science and technological applications. Herein, the modulation of MIT behaviors in one VO2 nanowire with an artificial oxidized domain induced by selected‐area chemical nanoengineering is described. The formation of an artificial oxidized domain enables to suppress MIT and stabilize the insulating phase above the MIT temperature of pristine VO2 nanowires, which leads to an enhanced MIT hysteresis and temperature. The creation of artificial domains and the modulation of MIT in correlated oxide nanowires help to both investigate the essential physics behind correlated nanomaterials and fabricate nanoscale multifunctional devices.

show abstract

Selected‐Area Chemical Nanoengineering of Vanadium Dioxide Nanostructures Through Nonlithographic Direct Writing

Wang

Wei

Huang

et al. 2018

Adv Materials Inter

View full text Add to dashboard Cite

the characteristics of chemically sensitive nanostructures. Achieving flexible selected-area compositions governed at the nanoscale is thus challenging but urgent for constructing functional nanostructures and advanced devices. In particular, such study is necessary for understanding the essential physics and extending device functions to further engineer and manipulate individual 1D nanostructures. [8] Vanadium dioxide (VO 2 ) is a prototypical correlated material with a metalinsulator transition and has attracted considerable interest in modern electronics and fundamental physics research. The structural phase transition of VO 2 occurs near room temperature, accompanied by a simultaneous change in electronic and optical characteristics. [9] Meanwhile, VO 2 1D nanobeams or nanowires have attracted significant attention in the metal-insulator transition communities. Vanadium oxides are sensitive to chemical reagents, and thus the artificial manipulation of local doping and valence in correlated VO 2 nanostructures (e.g., nanowire) is important for understanding metal-insulator transition and building Mott field-effect transistors. Recent interest has been focused on the metal-insulator transition [10] and the dynamic behaviors from the monoclinic to rutile phases, [11] while selected-area control of the oxidation states of vanadium oxides (e.g., VO, V 2 O 3 , VO 2 , and V 2 O 5 ) in nanoscale has been left underexplored. [12] Here, we present selected-area chemical nanoengineering (SACNE) of VO 2 nanostructures by nonlithographic directwriting processes. In SACNE processes, artificial chemical changes were triggered by a laser without the assistance reagents and sacrificial layer. Accordingly, alternative VO 2+x patterns were fabricated in the VO 2 nanoparticles and nanobeams. SACNE will provide more opportunities to directly engineer correlated oxides at the nanoscale to achieve functional electronic devices based on metal-insulator transitions.Before initiating SACNE processes, VO 2 nanoparticles were prepared by atomic layer deposition (ALD) and an annealing process while VO 2 nanobeams were prepared by chemical vapor deposition. [13] Figure 1a,b shows the morphologies and structures of an as-prepared VO x film and VO 2 nanoparticles on SiO 2 /Si substrate. The VO x film is uniform and smooth with a thickness of ≈72 nm, while randomly distributed VO 2 particles have a radius of ≈100-200 nm after the annealing Nanoscale selected-area chemical engineering is challenging but critical to manipulate carrier transport and realize multifunctional characteristics in advanced devices. Undesired chemical contaminants might occur in conventional lithographic processes and would degrade the characteristics of chemical-sensitive vanadium oxide nanostructures. Here, a facile strategy is introduced to chemically engineer VO 2 nanostructures using a nonlithographic direct-writing process without chemical reagents and sacrificial layers. Nanoscale selected-area photooxidation promotes the formation of VO 2+x patterns in VO ...

show abstract

Room temperature NO2 sensing performance of free-standing mesh-structure vanadium dioxide nanorods by a chemical vapour deposition method

Cited by 29 publications

References 36 publications

Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives

Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives

Modulated Metal–Insulator Transition Behaviors in Vanadium Dioxide Nanowires with an Artificial Oxidized Domain

Selected‐Area Chemical Nanoengineering of Vanadium Dioxide Nanostructures Through Nonlithographic Direct Writing

Contact Info

Product

Resources

About