Room-temperature organic magnetoresistance based on interfacial ground charge transfer state

Abstract

We propose the organic magnetoresistance (OMR) based on weak interfacial ground charge transfer (IGCT) state at m-MTDATA/Alq3 heterojunction. The maximum OMR reaches 13.2% at room temperature under the external magnetic field of 300 mT, which is well interpreted by the different roles of singlet and triplet IGCT states in hole transport. As demonstrated, the hole transport is blocked by the singlet IGCT and passed through by the triplet IGCT. By manipulating the Larmor frequencies (∆ω=∆gµBB/ℏ) of mixing singlet and triplet IGCT states through Δg mechanism under external magnetic field, the hole current is modulated, thus generating OMR. Furthermore, OMR can be further enhanced to 15.4% at 300 mT and 27.9% at 1000 mT by inserting a thin BCP interlayer between m-MTDATA and Alq3 layers. This picture will help to implement a giant OMR by interfacial CT states in the future.

Photocontrolled All-Organic Magnetoelectric Switch Based on Two Types of Charge Transfer Complexes at Room Temperature

“…Meanwhile, CT includes excited or ground states, which have completely different MFE polarities. In previous reports, , we have realized a device with excited or ground CT states, proving that CT states can be effective modules to construct purely organic, flexible, well-responsive, and multifunctional logical spintronic devices without any ferromagnetic electrodes at room temperature.…”