Room temperature oxidation of silicon during and after etching

Ritter, J.C.; Robinson, McD.; Faraday, B. J.; Hoover, J.I.

doi:10.1016/0022-3697(65)90024-7

Cited by 8 publications

(2 citation statements)

References 9 publications

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“…For example, freshly etched 10 -3 ohm-ca wafers possess an ellipsometrically measured film 8.5-10A thick and an estimated (ESCA) initial oxide thickness of 2-4A. In contrast to the results of Ritter et al (22) which indicated that an anomalously thick oxide layer formed in air on etched, p-type 10 -2 ohm-cm silicon, p-type 10 -2 ohm-ca (1019/cm 3) silicon wafers exhibit an intermediate growth rate between that of 2 and 10 -3 ohm-ca silicon. The rate of subsequent oxide growth in air is more rapid on the heavily doped silicon and is indicated by both ellipsometry and ESCA.…”

Section: Table II Oxide Growth On Cleaved Silicon Samplesmentioning

confidence: 68%

Oxide Growth on Etched Silicon in Air at Room Temperature

Raider

Flitsch

Palmer

1975

J. Electrochem. Soc.

221

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Oxide growth on etched silicon wafers at room temperature was studied as a function of etching procedure, wafer orientation, dopant concentration, and exposure to ultraviolet light. An impurity film was rapidly deposited on the silicon surface after etching with hydrofluoric acid. Impurity adsorption was distinguished from oxide growth by x-ray photoelectron spectroscopy (E'SCA). The impurity film greatly reduced the initial oxide growth rate when compared with oxide, growth on a cleaved silicon surface. The thickness of oxide films formed on etched surfaces was determined and compared using ESCA and ellipsometry.* Electrochemical Society Active Member.

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Section: Table II Oxide Growth On Cleaved Silicon Samplesmentioning

confidence: 68%

Oxide Growth on Etched Silicon in Air at Room Temperature

Raider

Flitsch

Palmer

1975

J. Electrochem. Soc.

221

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“…However, T and even Q units were observed in Figure 1. The spectra indicate that the oxidative cleavage of Si-Si bonds in cyclopentasilane partially occurred during the sol–gel reaction to give Si–O–Si bonds [38,39,40,41,42,43,44]. Generally, when materials with Si–Si bonds on the surface are immersed into water or exposed to dry air, the Si–Si bonds are readily oxidized, and chemically stabilized Si–O–Si bonds are formed.…”

Section: Resultsmentioning

confidence: 99%

New Condensation Polymer Precursors Containing Consecutive Silicon Atoms—Decaisopropoxycyclopentasilane and Dodecaethoxyneopentasilane—And Their Sol–Gel Polymerization

et al. 2019

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The sol–gel polymerization of alkoxysilanes is a convenient and widely used method for the synthesis of silicon polymers and silicon–organic composites. The development of new sol–gel precursors is very important for obtaining new types of sol–gel products. New condensation polymer precursors containing consecutive silicon atoms—decaisopropoxycyclopentasilane (CPS) and dodecaethoxyneopentasilane (NPS)—were synthesized for the preparation of polysilane–polysiloxane material. The CPS and NPS xerogels were prepared by the sol–gel polymerization of CPS and NPS under three reaction conditions (acidic, basic and neutral). The CPS and NPS xerogels were characterized using N2 physisorption measurements (Brunauer–Emmett–Teller; BET and Brunauer-Joyner-Halenda; BJH), solid-state CP/MAS (cross-polarization/magic angle spinning) NMRs (nuclear magnetic resonances), TEM, and SEM. Their porosity and morphology were strongly affected by the structure of the precursors, and partial oxidative cleavage of Si-Si bonds occurred during the sol–gel process. The new condensation polymer precursors are expected to expand the choice of approaches for new polysilane–polysiloxane.

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Methoden und Ergebnisse optischer Untersuchungen an Halbleitergrenzflächen

Beckmann

1968

Angewandte Chemie

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Die Messung des Polarisationszustandes von reflektiertem Licht (Ellipsometrie) erlaubt die Bestimmung von Dicke und Brechungsindex dünner Schichten, die sich auf einer Grenzfläche bilden. IR‐spektroskopisch lassen sich nach der Methode der inneren Reflexion (Internal Reflection Spectroscopy, IRS) die Absorptionsspektren solch dünner Schichten aufnehmen und so Aussagen über ihre chemische Zusammensetzung gewinnen. Mit diesen Meßverfahren wurden Adsorptionsprozesse und die Bildung von Reaktionsschichten an Halbleiter‐Grenzflächen untersucht. Ferner eignen sich die Verfahren für Messungen an freien Ladungsträgern in der Raumladungsrandschicht sowie in Oberflächenzuständen.

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Room temperature oxidation of silicon during and after etching

Cited by 8 publications

References 9 publications

Oxide Growth on Etched Silicon in Air at Room Temperature

Oxide Growth on Etched Silicon in Air at Room Temperature

New Condensation Polymer Precursors Containing Consecutive Silicon Atoms—Decaisopropoxycyclopentasilane and Dodecaethoxyneopentasilane—And Their Sol–Gel Polymerization

Methoden und Ergebnisse optischer Untersuchungen an Halbleitergrenzflächen

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