Room temperature photoluminescence and spectroscopic ellipsometry of reactive co-sputtered Cu-doped ZnO thin films

Singh, M. P.; Ambedkar, Anit K.; Tyagi, Shrestha; Kumar, Virendra; Yadav, Prashant; Kumar, Ashwani; Gautam, Yogendra K.; Singh, Beer

doi:10.1016/j.ijleo.2022.168860

Cited by 12 publications

(8 citation statements)

References 41 publications

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“…57,60 Since in the CZO sample, no peak related to green emission has been found, we can thus say that doping of copper does not produce oxygen vacancy in CZO thin films; perhaps Cu substituted Zn in host ZnO, which is also confirmed by XRD and XPS results. A similar result was also reported by Singh et al 61 and Sreedhar et al 59 The color coordinates of PL on the CIE 1931 X−Y chromaticity diagram are shown in Figure 6d. The color points of the UZO and CZO thin films were found at (0.254, 0.0.175) and (0164, 0.026), correspondingly.…”

Section: Resultssupporting

confidence: 89%

“…Nowadays, various physical, as well as chemical, techniques have been used to synthesize copper-doped ZnO (CZO) thin films such as pulsed laser deposition (PLD), RF/DC sputtering, and the vapor–liquid–solid (VLS) method. – Out of these techniques, sputtering is inexpensive and one of the best techniques to synthesize uniform and adhesive films of CZO.…”

Section: Introductionmentioning

confidence: 99%

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Enhanced Visible-Light Photodetection with Undoped and Doped ZnO Thin-Film Self-Powered Photodetectors

Singh,

Ambedkar,

Tyagi

et al. 2023

ACS Omega

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Photodetection plays an essential role in the visiblelight zone and is important in modern science and technology owing to its potential applications in various fields. Fabrication of a stable photodetector remains a challenge for researchers. We demonstrated a high-response/recovery and self-powered undoped ZnO (UZO) and Cu-doped ZnO (CZO) thin film-based visible-light photodetector fabricated on a cost-effective Si substrate using reactive cosputtering. The structural, morphological, and optical properties of CZO and UZO thin films have been examined using X-ray diffraction, field emission scanning electron microscopy, X-ray photoelectron spectroscopy, atomic force microscopy, and photoluminescence spectroscopy. The results of the CZO/n-Si photodetector compared with those of the undoped ZnO (UZO)/n-Si photodetector show that the CZO/n-Si exhibits a higher on/off ratio, responsivity, and detectivity than UZO/n-Si. Also, the CZO/ n-Si photodetector shows high stability and reproducibility over 20 cycles after 180 days. A relative study of CZO/n-Si-and UZO/n-Si-based photodetectors reveals the enhanced performance of the CZO/n-Si photodetector, which has a high on/off ratio of ∼300 with a high specific detectivity of 2.8 × 10 10 Jones for 75 mW visible light. The prepared self-powered CZO/n-Si/Ag thin film-based visible-light photodetector paves the way for the development of high-performance photodetector designs.

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Section: Resultssupporting

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Enhanced Visible-Light Photodetection with Undoped and Doped ZnO Thin-Film Self-Powered Photodetectors

Singh,

Ambedkar,

Tyagi

et al. 2023

ACS Omega

Self Cite

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“…It indicates the existence of physical or chemical phenomena that do not necessarily correspond to the crystalline structure of the semiconductor. In the Lorentzian signal, the native defects were not generated from external dopants but intrinsic [50,51]. It is also possible to observe a signal with maximum luminescence in the green color at 490 nm.…”

Section: Photoluminescence Spectrum Of Zno (A)mentioning

confidence: 98%

Role of native defects on the opto-electronic properties of p-type ZnO synthesized during the most straightforward method: only water

Zagal-Padilla

Gamboa

2023

Appl. Phys. A

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The influence of predominant native defects in forming ZnO with p-type conductivity is discussed in this work when the semiconductor is synthesized only in water. The semiconductor was prepared by dissolving a Zn-salt in deionized water at 80 °C. The powders were thermally treated at 400 °C in an air atmosphere to obtain well-defined crystalline ZnO. XRD, SEM, EDS, Raman spectroscopy, diffuse reflectance, photoluminescence, and Seebeck effect techniques were used to characterize the synthesized material. The results showed a well-crystalline semiconductor in wurtzite phase. The crystal-oriented growth was the (002) plane. The sample morphology was formed by highly ordered sticks-like. The optoelectronic characterization showed that the synthesized ZnO had a lower band gap than that reported in the literature. It was related to deep energy levels corresponding to oxygen interstitials as the predominant native defects. Raman, EPR, and photoluminescence spectra analysis corroborated the existence of native defects in the crystalline structure. The p-type conductivity of the sample was determined by Seebeck coefficient analysis. A synthesis reaction mechanism involving the formation of oxygen interstitials was proposed in this work. Understanding the effects of native defects in wide band gap semiconductors is necessary to design new materials for sensors or energy conversion applications.

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“…Karali et al reported that copper ions may replace zinc in the host lattice, resulting in visible light emission [38]. Manohar Singh also reported strong violet emissions from copper-doped ZnO, which may be due to zinc vacancies [39]. The Full Width Half Maxima (FWHM) of the peaks reflects the range of wavelengths that can optically activate the devices.…”

Section: Fig 5 Transmission Spectra Of Znomentioning

confidence: 99%

Fabrication and Analysis of Ion-Engineered ZnO Device Structures for Optoelectronic Applications

Younus,

Shuja,

Ali

2023

IEEE Photonics J.

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Abstract-ZnO-based devices are highly promising for applications involving light-matter interaction. This work explores the impact of light-matter interaction on ion-induced ZnO structures and their respective energy band profiles. Incorporation of various ions, (Au + , B + , Cu + , P + ) into the ZnO lattice, deposited via magnetron sputtering on an n-type Si substrate was investigated in detail. To assess the impact of these ions on the ZnO surface, monte-carlo simulations at low energies were performed and optimal ion dose and energy conditions were determined. The resulting post-fabrication devices underwent comprehensive structural, morphological, optical, and electrical diagnostics. X-ray diffraction (XRD) analysis confirmed the wellmaintained crystal structure of the ZnO lattice along the <100> direction for all implant sequences. Notably, the gold (Au + ) implant exhibited the highest light extinction into the ZnO matrix, as indicated by the extinction coefficient and refractive index data. This observation suggested that Au + implantation could effectively generate electron-hole pairs. The photovoltage and dark/light current measurements provided further evidence of enhanced light-matter interactions and responsivity in the Au + -implanted devices owing to light-induced currents. Furthermore, the energy bands of all implant cases were profiled by Charge Deep Level Transient Spectroscopy (Q-DLTS) measurements by evaluating discrete energy states within the ZnO lattice.

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Room temperature photoluminescence and spectroscopic ellipsometry of reactive co-sputtered Cu-doped ZnO thin films

Cited by 12 publications

References 41 publications

Enhanced Visible-Light Photodetection with Undoped and Doped ZnO Thin-Film Self-Powered Photodetectors

Enhanced Visible-Light Photodetection with Undoped and Doped ZnO Thin-Film Self-Powered Photodetectors

Role of native defects on the opto-electronic properties of p-type ZnO synthesized during the most straightforward method: only water

Fabrication and Analysis of Ion-Engineered ZnO Device Structures for Optoelectronic Applications

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