Room temperature photoluminescence characterization of Si surface passivation and dielectric/Si interface quality

Polarized Raman Signals from Si Wafers: Dependence of In-Plane Incident Orientation of Probing Light

“…Three major spectral lines (457.9, 488.0 and 514.5 nm), from a multi-wavelength Ar + ion laser, are used as the excitation source, which allow crystal quality, stress and strain to be characterized at different depths. [12][13][14][15][16][17] The configuration of the polychromator-based multiwavelength Raman system is illustrated in Fig. 1.…”

“…[12][13][14] The symmetry of the Raman signal suggests that the system has extremely low image distortion. The wavenumber resolution at the excitation wavelengths of 457.9, 488.0 and 514.5 nm are 0.105, 0.085, and 0.071 cm −1 /pixel, respectively, before curve fitting.…”

“…It becomes 2.673 pm at the Si Raman peak under 514.5 nm excitation. The unique, no-moving-part design of the multiwavelength Raman spectroscopy system minimizes the uncertainties in absolute wavenumber of the Raman signal by eliminating the common mechanical problems, [12][13][14][15][16][17] such as calibration errors, optical misalignment from vibration, and backlash of moving parts, seen in conventional Raman systems. This is to get the measurement resolution, stability and repeatability required to make useful determination of these physical characteristics of a Si wafer.…”

“…Raman signals from a bare Si (100) reference wafer, under all three excitation wavelengths, are centered at 520.3 cm −1 and are highly symmetrical. [12][13][14] The symmetry of the Raman signal suggests that the system has extremely low image distortion. The wavenumber resolution at the excitation wavelengths of 457.9, 488.0 and 514.5 nm are 0.105, 0.085, and 0.071 cm −1 /pixel, respectively, before curve fitting.…”