2020
DOI: 10.1016/j.vacuum.2019.108999
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Room temperature photoluminescence in plasma treated rutile TiO2 (110) single crystals

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Cited by 8 publications
(6 citation statements)
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“…intensity 530 nm–2.5 eV), 580–725 nm (2.14 eV–1.7 eV), 840 nm (1.48 eV), 990 nm (1.25 eV) and 1050 nm (1.18 eV) was revealed. Green and red emissions are usually associated with the presence of oxygen vacancies and Ti 3+ defects, respectively [ 46 , 47 ]. Oxygen vacancies can be located in a wide range of states (mid-gap), i.e., 2.269 eV (447 nm) to 2.719 eV (456 nm).…”
Section: Resultsmentioning
confidence: 99%
“…intensity 530 nm–2.5 eV), 580–725 nm (2.14 eV–1.7 eV), 840 nm (1.48 eV), 990 nm (1.25 eV) and 1050 nm (1.18 eV) was revealed. Green and red emissions are usually associated with the presence of oxygen vacancies and Ti 3+ defects, respectively [ 46 , 47 ]. Oxygen vacancies can be located in a wide range of states (mid-gap), i.e., 2.269 eV (447 nm) to 2.719 eV (456 nm).…”
Section: Resultsmentioning
confidence: 99%
“…As the Ar plasma treatment time increased to 60 s, the optical bandgap increased by 0.07 eV from 3.47 to 3.54 eV (figure 5(c)). The increase in defects in the AZO thin film owing to the Ar ion bombardment led to an increase in the charge carrier concentration, thereby increasing the optical bandgap [40]. In contrast, as the treatment time increased in the O 2 plasma, the optical bandgap slightly decreased by 0.03 eV from 3.47 to 3.44 eV.…”
Section: Resultsmentioning
confidence: 99%
“…These variations in TiO 2– x CL intensity may indicate an increase in OV concentrations. It is well known that OVs can appear in a variety of charged states: (i) single ionized ( Vo • ), (ii) double ionized ( Vo •• ), and (iii) neutral state ( Vo ) . As a result of the OV arrangement, energy levels form within the band gap, which in principle contribute to different luminescence bands.…”
Section: Resultsmentioning
confidence: 99%