Room temperature photoluminescence of amorphous GaAs

Brown, Gail J.

doi:10.1016/j.matlet.2009.08.047

Cited by 4 publications

(3 citation statements)

References 17 publications

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“…As an effort to explain the absence of Raman modes associated to the cubic-ZB phase of the GaAsN samples, see XRD patterns in figure 2, centered at (111) reflection of ZB-GaAs and/or ZB-GaAs:N. This diffractogram was fitted using five Lorentzian curves (tagged A to E), as it was suggested by the experimental XRD lineshape by following some of its visible features (see figures 2 and 6). In accordance with this deconvolution the XRD pattern is composed by a small band (band A) centered at 2θ = 26.52 • , that is, originated by crystalline ZB of GaAs or/and N doped GaAs [24]. The reflections at 2θ around 24 • and 29 • (B and C bands) are the result of the phase transformation of the GaAs:N nanocrystalline material to rhombohedral symmetry.…”

Section: Resultssupporting

confidence: 55%

“…The L point modes together with X ones, which appear mixed with Γ point modes, have been observed by other authors in the Raman spectra of GaAsN [19,24]. In some cases, because of disorder introduced by N and the symmetry loss, selection rules are no longer valid and other transitions, otherwise forbidden ones, mix with those at the Γ point [30].…”

Section: Resultsmentioning

confidence: 61%

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Rhombohedral symmetry in GaAs₁₋ _x N _x nanostructures

Zelaya-Ángel¹,

Jiménez‐Sandoval²,

Álvarez-Fregoso³

et al. 2021

Semicond. Sci. Technol.

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Nanocrystalline structures of GaAs1−x N x thin films were prepared on 7059 Corning glass substrates by means of an RF magnetron sputtering system using a GaAs target and N2 as ambient-gas, at several values of substrate temperature (T s). The range of T s was chosen from room temperature to 400 °C. The nitrogen concentration into the GaAsN layers is (1.0% ± 0.2%). The average energy band gap of the GaAsN nanostructures, calculated from their optical absorption spectra, is 2.9 ± 0.2 eV. The Raman scattering spectra exhibit vibrational modes associated to the rhombohedral phase due to the crystalline structural transformation from the zincblende (ZB)-GaAs caused by the introduction of N into the lattice. From x-ray diffraction (XRD) patterns the ZB structure was identified with two additional pairs of peaks which were associated to two types of cubic to rhombohedral crystalline phase changes of the material. One type has a low deformation to a moderately elongated unit cell, and the second type has a higher deformation to a more elongated unit cell. The rhombohedral symmetry of the crystalline lattice in the GaAsN nanostructures has been calculated from XRD data to confirm experimental evidences. The total average grain size was determined from the Scherrer formula: 3.3 ± 1.2 nm. The photoluminescence spectra are characterized by a very broad emission band which encompasses photon energies from near infrared to UV (775–310 nm, i.e. 1.6–4.0 eV).

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Section: Resultssupporting

confidence: 55%

Section: Resultsmentioning

confidence: 61%

Rhombohedral symmetry in GaAs₁₋ _x N _x nanostructures

Zelaya-Ángel¹,

Jiménez‐Sandoval²,

Álvarez-Fregoso³

et al. 2021

Semicond. Sci. Technol.

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“…By selecting specific types of background gases, one can govern the interactions between the plasma and the gas molecules during the deposition process. Furthermore, it is possible to dictate the crystalline structure and orientation of the film by choosing different substrate materials, their lattice orientations, and adjusting the substrate temperature, enabling the creation of various crystalline forms such as monocrystalline [6], polycrystalline [7], and amorphous [8] structures. The angle of deposition can also be adjusted to guide the growth of nanostructures like nanopillars and nanowires [9].…”

Section: Introduction To Pld 1background and Developmentsmentioning

confidence: 99%

Review on Preparation of Perovskite Solar Cells by Pulsed Laser Deposition

Lu,

Fan,

Zhang

et al. 2024

Inorganics

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Pulsed laser deposition (PLD) is a simple and extremely versatile technique to grow thin films and nanomaterials from a wide variety of materials. Compared to traditional fabrication methods, PLD is a clean physical vapour deposition approach that avoids complicated chemical reactions and by-products, achieving a precise stochiometric transfer of the target material onto the substrate and providing control over the film thickness. Halide perovskite materials have attracted extensive attention due to their excellent photoelectric and photovoltaic properties. In this paper, we present an overview of the fundamental and practical aspects of PLD. The properties and preparation methods of the halide perovskite materials are briefly discussed. Finally, we will elaborate on recent research on the preparation of perovskite solar cells by PLD, summarize the advantages and disadvantages of the PLD preparation, and prospect the all-vacuum PLD-grown solar cells in a full solar cell structure.

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