Room temperature photoluminescence properties of ZnO nanorods grown by hydrothermal reaction

Iwan, S.; Fauzia, Vivi; Umar, Akrajas Ali; Sun, Xiao Wei

doi:10.1063/1.4946934

Cited by 18 publications

(22 citation statements)

References 19 publications

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“…[63] The PL properties of the ZnO nanorods fabricated by a hydrothermal reaction on silicon substrate were investigated and reported by Iwan et al [63]. The ZnO seed layer was fabricated by depositing ZnO thin films on Si substrates by ultrasonic spray pyrolisis (USP) [63]. The annealing effects on the crystal structure and optical properties of ZnO nanorods were investigated [63].…”

Section: Zno Nanorods Devicesmentioning

confidence: 99%

“…Figure 12 shows the FESEM images of the ZnO nanorods prepared using growth precursor with a concentration of (a) 0.02 M (b) 0.06 M. Figure 13 shows the XRD pattern of ZnO nanorods prepared using growth precursor with a concentration of 0.02 M, 0.06 M and 0.1 M [62]. [63] The PL properties of the ZnO nanorods fabricated by a hydrothermal reaction on silicon substrate were investigated and reported by Iwan et al [63]. The ZnO seed layer was fabricated by depositing ZnO thin films on Si substrates by ultrasonic spray pyrolisis (USP) [63].…”

Section: Zno Nanorods Devicesmentioning

confidence: 99%

“…The ZnO seed layer was fabricated by depositing ZnO thin films on Si substrates by ultrasonic spray pyrolisis (USP) [63]. The annealing effects on the crystal structure and optical properties of ZnO nanorods were investigated [63]. The post annealing treatment was performed at 800°C with different environments [63].…”

Section: Zno Nanorods Devicesmentioning

confidence: 99%

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Recent Advances of ZnO Based Nanowires and Nanorods Devices

Nahhas¹

2018

AJN

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This paper presents the recent advances of the Zinc Oxide (ZnO) based nanowires and nanorods devices. ZnO has gained a substantial interest in the research area of the wide bandgap semiconductors due to its unique electrical, optical and structural properties. ZnO is considered as one of the major candidates for electronic and photonic applications. Also, it has distinguished and interesting electrical and optical properties. ZnO is considered as a potential contender in optoelectronic applications such as solar cells (SCs), surface acoustic wave devices, and ultraviolet (UV) emitters. The ZnO as a nanostructured material exhibits many advantages for nanodevices. ZnO nanostructured material has the ability to absorb UV radiation and immense in many optical applications. Recently, ZnO nanostructured based devices have gained much attention due to their various potential applications. ZnO as nanomaterial has been used in many devices such as UV photodetectors (PDs), light emitting diodes (LEDs), and transistors. The recent aspects of ZnO nanowires and nanorods based devices are presented and discussed.

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Section: Zno Nanorods Devicesmentioning

confidence: 99%

Section: Zno Nanorods Devicesmentioning

confidence: 99%

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Recent Advances of ZnO Based Nanowires and Nanorods Devices

Nahhas¹

2018

AJN

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“…In the past decade, ZnO thin films were fabricated using various methods (i.e., metal organic vapor deposition, molecular beam epitaxy, pulsed laser decomposition, sputtering, phase vapor transport, and ultrasonic spray pyrolysis (USP)) [6]. Among these methods, the USP offers simplicity and low cost for fabricating thin films [7,8].…”

Section: Introductionmentioning

confidence: 99%

Structural and Photoluminescence Properties of ZnO Thin Films Deposited by Ultrasonic Spray Pyrolysis

Sugihartono¹,

Handoko²,

Fauzia³

et al. 2018

MST

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Zinc oxide (ZnO) thin films on a silicon (Si) (111) substrate were grown herein using ultrasonic spray pyrolysis at 450 °C with different Zn concentrations. The ZnO thin films had X-ray diffraction patterns of a polycrystalline hexagonal wurtzite structure. The (002) and (101) peak intensities changed under different Zn concentrations. Furthermore, according to Scherer's and Stokes-Wilson equations, the crystallite size and the internal strain of the ZnO thin films in the (002) and (101) peaks changed with the Zn concentration. Optically, the photoluminescence spectra indicated that the ratio of the UV/GB emission of the ZnO thin films was the highest at the Zn concentration of 0.02 mol/mL. We predicted that by increasing the Zn concentrations, the nonradiative transitions, which originated from defects, such as lattice and surface defect, become dominant. In conclusion, the ZnO thin films with the Zn concentration of 0.02 mol/mL had a better crystalline and optical quality. Abstrak Karakteristik Struktur dan Fotoluminisen dari Lapisan Tipis ZnO yang Dideposisikan menggunakan Pengkabutan Ultrasonik. Lapisan tipis seng oksida (ZnO) telah ditumbuhkan di atas substrat silikon (111) menggunakan pengkabutan ultrasonik dengan variasi konsentrasi Zn pada suhu 450 °C. Berdasarkan pengujian difraksi sinar-X, lapisan tipis ZnO memiliki struktur wurtzite berbentuk hexagonal polikristalin. Dua buah puncak yang memiliki orientasi bidang (002) dan (101) memiliki perubahan intensitas akibat adanya variasi konsentrasi Zn. Begitupula hasil perhitungan yang mengacu pada persamaan Scherer's dan Stokes-Wilson, memberikan informasi bahwa ukuran kristallite dipengaruhi oleh konsentrasi Zn. Secara optik, perbandingan emisi UV/GB yang teramati dari spektrum fotoluminisen memiliki nilai tertinggi ketika konsentrasi Zn 0.02 mol/mL. Kami memprediksikan bahwa penambahan konsentrasi Zn, transisi non-radiative yang berasal dari defek-defek (defek kisi dan permukaan) menjadi dominan. Sebagai kesimpulan, lapisan tipis ZnO yang memiliki konsentrasi Zn 0.02 mol/mL memiliki kualitas kristal dan optik yang lebih optimal.

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“…ZnO nanorods composition testing performed using dispersive x-ray energy (EDX) confirmed the number of Zn elements that have the greatest composition compared to other elements. [5][6]. Pada teknik hidrotermal memiliki beberapa keunggulan diantaranya mudah dalam eksperimen dan memiliki temperatur kerja yang relatif rendah [7][8].…”

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EFEK PERLAKUAN PANAS LARUTAN PREKURSOR PADA PROSES PENUMBUHAN ZnO NANORODS

Mekarsari¹,

Sugihartono²,

Handoko³

2019

Prosiding Seminar Nasional Fisika (E-Journal) snf2019 Unj

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AbstrakTeknik penumbuhan ZnO nanorods dilakukan menggunakan dua tahap, yaitu tahap deposisi lapisan benih dan penumbuhan nanorods. Deposisi lapisan benih dilakukan menggunakan teknik ultrasonic nebulizer 1.7 MHz dan penumbuhan nanorods menggunakan teknik hidrotermal pada suhu 95 o C selama 2 jam. Fokus penelitian ini adalah mengamati pengaruh perlakuan panas larutan prekursor pada penumbuhan ZnO nanorods. Morfologi ZnO nanorods akan diamati menggunakan scanning electron microscopy (SEM) dan analisis komposisi menggunakan EDX. Hasil pengamatan mengkonfirmasi ZnO nanorods tumbuh di atas substrat dengan orientasi acak dan ukuran diameter yang bervariasi. Pengujian komposisi ZnO nanorods dilakukan menggunakan energy dispersive x-ray (EDX) memberikan konfirmasi jumlah elemen Zn yang memiliki komposisi paling besar dibandingkan dengan elemen lainnya. Kata-kata kunci:ZnO nanorods, perlakuan panas, morfologi, struktur Kristal Abstract Prosiding Seminar Nasional Fisika (E-Journal) SNF2019

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Room temperature photoluminescence properties of ZnO nanorods grown by hydrothermal reaction

Cited by 18 publications

References 19 publications

Recent Advances of ZnO Based Nanowires and Nanorods Devices

Recent Advances of ZnO Based Nanowires and Nanorods Devices

Structural and Photoluminescence Properties of ZnO Thin Films Deposited by Ultrasonic Spray Pyrolysis

EFEK PERLAKUAN PANAS LARUTAN PREKURSOR PADA PROSES PENUMBUHAN ZnO NANORODS

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