Room temperature photoluminescence spectrum modeling of hydrogenated amorphous silicon carbide thin films by a joint density of tail states approach and its application to plasma deposited hydrogenated amorphous silicon carbide thin films

The Evolution of Photoluminescence Properties of PEA2SnI4 Upon Oxygen Exposure: Insight into Concentration Effects

“…With the joint DOS increase, the absorption coefficient increase, which consist with experimental phenomena of PL increase under low oxygen concentration. [ 31 ] As the oxygen concentration increases, oxygen trend to adsorb on the iodide ion sites and subsequently diffuse into the iodine vacancies, accompanying the introduction of defect states in the forbidden band and the reduction of radiative recombination probability of system. When the oxygen concentration further increase, defective states can be introduced into the band gap with the bonding between oxygen and Sn, resulting in PL quenching.…”

Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process

“…Therefore, the research works on a-SiC:H have reported different bands of light emission, some of which have associated the PL to quantum confinement effects (if there are silicon nanocrystals in the amorphous matrix [1,8]) and others to radiative recombination in the band gap [7,9,10]; however, the majority have related the intensity and position of PL to the carbon content [2,11,12]. Nevertheless, there are few studies in which thermal annealing has been performed to study its effect on light emission.…”