Room temperature plasma enriching oxygen vacancies of WO3 nanoflakes for photoelectrochemical water oxidation

Electronic structure engineering for electrochemical water oxidation

“…Additionally, oxygen vacancies positively improve OER performance by significantly altering the energy level, conductivity, and adsorption properties of the materials. Various synthetic methods were used to generate oxygen vacancies, such as thermal treatment, reduction by NaBH 4 , 82,83 ion exchange, plasma treatment, 84,85 doping of ionic liquid 86 , and in-situ electrochemical activation.…”

Limitation of WO3 in Zn-Co3O4 Nanopolyhedra by the Pyrolysis of H3PW12O40@BMZIF: Synergistic Effect of Heterostructure and Oxygen Vacancies for Enhanced Nitrogen Fixation

“…As shown in Figure S6, the positive slope of the Mott−Schottky plot confirms that WO 3 is an ntype semiconductor, and the flat band potential (Efb vs SCE) is −1.43 eV. 54 However, the negative slope of the Mott− Schottky plot confirms that Zn-Co 3 O 4 is a p-type semiconductor, and the flat band potential (Efb vs SCE) is 1.09 eV. 55 Finally, the minimum conduction band (CBM) of WO 3 and Zn-Co 3 O 4 can be estimated to be −1.39 and − 0.11 eV, and the calculated VBM of both are 1.23 and 1.53 eV, respectively.…”

“…The Tauc curve shows that the band gap energies of WO 3 and Zn-Co 3 O 4 are 2.62 and 1.64 eV, respectively (Figure b,c). As shown in Figure S6, the positive slope of the Mott–Schottky plot confirms that WO 3 is an n-type semiconductor, and the flat band potential (Efb vs SCE) is −1.43 eV . However, the negative slope of the Mott–Schottky plot confirms that Zn-Co 3 O 4 is a p-type semiconductor, and the flat band potential (Efb vs SCE) is 1.09 eV .…”

Synergy of oxygen vacancies and Bi nanoparticles on BiOBr nanosheets for enhanced photocatalytic H2O2 production

“…More importantly, an oxygen vacancy, as a typical coordination unsaturated site, can adsorb and enrich O 2 efficiently, and the strong chemisorption thus promotes the transfer of photoexcited electrons to the oxygen space. 27 For example, compared to pristine BiVO 4 , Zhang 28 et al have found that OV-rich BiVO 4 enhanced the O 2 adsorption and interfacial electron transfer rate of O 2 by 19 and 23 times, respectively, resulting in a more than 32-fold increase in H 2 O 2 production. Li 29 et al also confirmed that the increase of surface OVs on Bi 2 MoO 6 hollow microspheres facilitated the generation and separation of charge carriers as well as enhanced the adsorption and activation of reactant molecules.…”