Room-Temperature Plasticity of InAs

Bourhis, Eric Le; Patriarche, G.

doi:10.1002/1521-396x(200005)179:1<153::aid-pssa153>3.0.co;2-z

Cited by 14 publications

(5 citation statements)

References 13 publications

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“…This is direct evidence supporting the idea that the initial yield in these materials occurs over a finite volume [1]. Others have also reported a square root dependence of plastic zone size with load examining the surface deformation around Berkovich indents in InAs [14]. Examining the ratio of the plastic zone dimensions (w/d) there is a slight increase with load.…”

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confidence: 65%

Effect of coherency strain on the deformation of In_xGa₁₋_xAs superlattices under nanoindentation and bending

Lloyd

P’ng

Clegg

et al. 2005

Philosophical Magazine

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It has been shown elsewhere that the room temperature yield pressure of In x Ga 1Àx As superlattices measured by nanoindentation, decreases from a high value as the volume averaged strain modulation is increased, while at 500 C under uniaxial compression or tension the yield stress increases from a low value with increasing strain modulation. We have used cross-sectional transmission electron microscopy to examine the deformation mechanisms in these two loading regimes. At room temperature both twinning and dislocation flow was found with the proportion of twinning decreasing with increasing strain modulation. The coherency strain of the superlattice is retained in a twin but partially relaxed by dislocation flow. The strain energy released by the loss of coherency assists dislocation flow and weakens the superlattice. Twins are only nucleated when a critical elastic shear of about 7 is achieved at the surface. The plastic zone dimensions under the indent are finite at the yield point, with a width and depth of approximately 1.3 mm and 1.1 mm respectively. Under uniaxial compression and tension at 500 C the superlattices deform by dislocation flow along {111} planes. The most highly strained samples also partially relax through the formation of misfit dislocations.

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Section: Sample Label Number Of Repeatsmentioning

confidence: 65%

Effect of coherency strain on the deformation of In_xGa₁₋_xAs superlattices under nanoindentation and bending

Lloyd

P’ng

Clegg

et al. 2005

Philosophical Magazine

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“…For the A face most dislocations were observed to be perfect and along the [-110], [0-11] and directions and some stacking faults were observed to be aligned along the opposite directions. Although not well understood yet, indentation in GaAs(001) revealed anisotropic microtwinning [7], contrary to InP [8], InAs [18] or GaSb [19]. Indeed while GaAs showed microtwinning in only one of the rosette arms, microtwinning was reported to appear in both rosette arms in the other compound semiconductors.…”

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confidence: 99%

Polarity influence on the nanoindentation response of GaAs

Patriarche¹,

Bourhis²,

Largeau³

et al. 2005

phys. stat. sol. (c)

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We have studied the polarity influence in the nanoindentation response of GaAs{111}. The nanoindentations were made under a large range of loads (F max between 0.2 mN and 50 mN) at room temperature on {111} faces of A (Ga) or B (As) character. Transmission electron microscopy (TEM) was used to observe the nanoindentation structures generated at the two polar surfaces. The indentation rosettes possess a 3-fold symmetry with arms developed along the <110> directions parallel to the surface. For a A-polar face, the rosette arms are constituted by two arms a long arm (LA, α dislocations) and a short arm (SA, β dislocations) while at the B surface only the LA (β dislocations) are formed. Furthermore, only for an A polar face microtwinning was observed to form and this is found to be in good agreement with previous observations of anisotropic microtwinning at GaAs(001) surfaces.

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“…The natures, however, are di erent in the two cases and this will be discussed in more detail below. Discontinuities in the loading curves (pop-in) have already been reported for several III±V semiconducting bulk materials and were attributed to the poor density of native defects (Hainsworth et al 1995, Le Bourhis and Patriarche 1999, 2000. Pop-in corresponds to an abrupt plastic¯ow generated by a strong dislocation activity (nucleation and propagation).…”

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confidence: 88%

“…It should be noted that no interfacial layer (oxide or amorphous) could be detected in the vicinity of the interface (®gure 1). Furthermore, no dislocations were observed at the interface, contrary to what was reported for compliant layers bonded with a low twist angle Le Bourhis 2000, Patriarche et al 2000). This result could be con®rmed by TEM plan-view observations and agrees very well with predictions made by Jesser et al (1999).…”

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Onset of plasticity in a Σ = 5 GaAs compliant structure

Bourhis¹,

Patriarche²

2001

Philosophical Magazine Letters

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Compliant structures have been fabricated in which a thin GaAs layer (thickness between 10 and 20 nm) was bonded on top of a GaAs substrate with a large twist angle (about 37°). This twist angle value was chosen so that the energy of the boundary (coincident boundary of type Sˆ5 …001 †) was minimized. The structure of the interface was characterized and the onset of plasticity in such a compliant substructure was investigated using nanoindentation that allowed the low-load deformation regime to be observed. The results are compared with those obtained under the same conditions on a GaAs bulk substrate alone. No plastic zone was observed by transmission electron microscopy in the compliant structure under loads below 0.25 mN while, under the same loads, plastic deformation was observed in the bulk substrate. For higher loads (2 mN), plastic-¯ow enhancement was observed in the compliant structure. The results are discussed in the light of the arrangement of dislocations observed in the plastic zones. } 1. Introduction Heteroepitaxy of III±V semiconductors is commonly used to fabricate electronic and optoelectronic devices that require materials of high structural quality. Above a critical thickness of the layers (which decreases rapidly with increasing mis®t), the epitaxial layers relax plastically through the introduction of mis®t dislocations at the interface. Unfortunately, this relaxation process also generates a large density of threading dislocations extending from the interface with the substrate to the top surface of the heterostructure. These dislocations adversely a ect the performance of the devices. The various procedures tried to eliminate the dislocations in standard epitaxy have so far remained insu ciently e ective.The compliant substrate was introduced to overcome this problem. The original idea was to relax the mis®t strain in a small region underneath the active region. The ideal situation is a free-standing layer set on the original substrate that can deform elastically, or even plastically, to relax the mis®t strain between the substrate and the Philosophical Magazin e Letters ISSN

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Room-Temperature Plasticity of InAs

Cited by 14 publications

References 13 publications

Effect of coherency strain on the deformation of In_xGa₁₋_xAs superlattices under nanoindentation and bending

Effect of coherency strain on the deformation of In_xGa₁₋_xAs superlattices under nanoindentation and bending

Polarity influence on the nanoindentation response of GaAs

Onset of plasticity in a Σ = 5 GaAs compliant structure

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Room-Temperature Plasticity of InAs

Cited by 14 publications

References 13 publications

Effect of coherency strain on the deformation of InxGa1−xAs superlattices under nanoindentation and bending

Effect of coherency strain on the deformation of InxGa1−xAs superlattices under nanoindentation and bending

Polarity influence on the nanoindentation response of GaAs

Onset of plasticity in a Σ = 5 GaAs compliant structure

Contact Info

Product

Resources

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Effect of coherency strain on the deformation of In_xGa₁₋_xAs superlattices under nanoindentation and bending

Effect of coherency strain on the deformation of In_xGa₁₋_xAs superlattices under nanoindentation and bending