2007
DOI: 10.1103/physrevlett.98.126405
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Room-Temperature Polariton Lasing in Semiconductor Microcavities

Abstract: We observe a room-temperature low-threshold transition to a coherent polariton state in bulk GaN microcavities in the strong-coupling regime. Nonresonant pulsed optical pumping produces rapid thermalization and yields a clear emission threshold of 1 mW, corresponding to an absorbed energy density of 29 microJ cm-2, 1 order of magnitude smaller than the best optically pumped (In,Ga)N quantum-well surface-emitting lasers (VCSELs). Angular and spectrally resolved luminescence show that the polariton emission is b… Show more

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Cited by 943 publications
(673 citation statements)
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“…1,2 Consequently, proposals for electrically pumped polariton lasers are a subject of much discussion in the literature. [3][4][5] For the realization of room-temperature polariton lasers and the optimization of their characteristics several requirements need to be satisfied.…”
Section: Introductionmentioning
confidence: 99%
“…1,2 Consequently, proposals for electrically pumped polariton lasers are a subject of much discussion in the literature. [3][4][5] For the realization of room-temperature polariton lasers and the optimization of their characteristics several requirements need to be satisfied.…”
Section: Introductionmentioning
confidence: 99%
“…emergence of spontaneous coherence. Designing semiconductor structures with required characteristics and controlling the parameters of the exciton system gives an opportunity to study various types of exciton condensates.A condensate of exciton-polaritons was recently realized in semiconductor microcavities [9][10][11][12][13]. This condensate is characterized by a strong coupling of excitons to the optical field and a short lifetime of the polaritons.…”
mentioning
confidence: 99%
“…Thus, a portion of the polariton laser research attention was transferred to wide-bandgap material systems, including GaN and ZnO, which provide a much higher exciton binding energy and oscillator strength for supporting stable roomtemperature (RT) operation. Thus far, the GaN-based polariton lasers have been demonstrated in planar MCs inserted with different types of excitonic structures including bulk GaN, 29 GaN/AlGaN multiple quantum wells (MQWs) 30 and GaN nanowires. 31 The exciton binding energy of the bulk GaN is comparable to the RT thermal energy of approximately 26 meV.…”
Section: Progress Historymentioning
confidence: 99%