Room-temperature preparation of metal-oxide nanostructures by DUV lithography from metal-oxo clusters

Stehlin, Fabrice; Wieder, Fernand; Spangenberg, Arnaud; Meins, Jean‐Marc Le; Soppera, Olivier

doi:10.1039/c3tc31326c

Cited by 55 publications

(71 citation statements)

References 29 publications

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“…After 600 s DUV irradiation, the content of C was largely reduced from 50.16% to 21.611%. Stehlin et al described a reaction pathway of DUV‐mineralization process for MAA modified titanium tetraisopropoxide (TiOMAA) as follows . Under DUV irradiation, MAA dissociates from TiOMAA and then decomposes into CO 2 and carbon alkane radicals.…”

Section: Resultssupporting

confidence: 60%

“…After spin‐coating, the sol–gel films are exposed to DUV light. Although no previous study illustrated the underlying photoreactions of ZnMAA irradiated by DUV light, based on other studies focusing on the effect of DUV to transition metals complexed with acid carboxylic compounds, we establish the assumptions as follows . The energy of DUV light is absorbed by ZnMAA causing π to π * electronic transition in the complex.…”

Section: Resultsmentioning

confidence: 99%

“…Recently, metal oxide patterns derived from solution process combined with direct‐patterning techniques have been demonstrated. Deep ultra‐violet (DUV) lithography, extreme ultra‐violet (EUV) lithography, and electron‐beam (e‐beam) lithography have shown their abilities to direct‐pattern metal oxide structures in submicro‐ or nanoscale dimensions. In comparison to conventional lithography processes including photoresist coating, wet etching and photoresist stripping, direct‐patterning techniques are not only photoresist‐free but also able to pattern structures of nanoscale dimensions which is, in contrast, difficult for wet etching process.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, DUV direct patterning avoids multistep processes, showing excellent controllability on dimension and position. Zinc methacrylate (ZnMAA) was chosen as a photosensitive precursor due to its high stability and because C=C bond in the molecular structure which was proven to be photosensitive to light in DUV range . In this work, ZnMAA was used for the first time to form ZnO structures from microscale to nanoscale dimension by a direct‐patterning method.…”

Section: Introductionmentioning

confidence: 99%

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Controllable Formation of Zinc Oxide Micro‐ and Nanostructures via DUV Direct Patterning

Yeh

Liu

Chuang

et al. 2016

Adv Materials Inter

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Various kinds of zinc oxide (ZnO) nanostructures, such as ZnO nanowires, ZnO nanobelts, ZnO nanosheets, and ZnO nanorods are promising building blocks for nanoscale systems. However, to precisely control the size, shape, and to make a controlled assembly of synthesized ZnO nanostructures are major diffi culties in the development of bottom-up devices. To overcome the challenge regarding reproducibility and positioning, a new method is proposed, deep ultra-violet (DUV) direct photo-patterning, to create ZnO microand nanostructures.A sol-gel formulation sensitive to DUV light and based on zinc methacrylate precursor is developed, and the photoreactions of zinc methacrylate under DUV light are carefully investigated by in situ spectroscopic ellipsometry, in situ FTIR, and XPS analysis. Then, the sol-gel solution is used as a negative tone resist in DUV lithography to evaluate its performance in producing high-resolution patterns. The results indicate that small patterns from micro-to nanoscale can be obtained in a simple and direct way.

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Section: Resultssupporting

confidence: 60%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Controllable Formation of Zinc Oxide Micro‐ and Nanostructures via DUV Direct Patterning

Yeh

Liu

Chuang

et al. 2016

Adv Materials Inter

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“…This solution can be used to prepare thin films by spin coating and these films can be solidified by DUV irradiation via photo‐induced crosslinking condensation reactions. The photocrosslinking process relies on a DUV‐induced photolysis of the ZnMAA complex followed by condensation reaction, as schematized in Figure a . It was shown previously that the DUV treatment is effective for crosslinking but some organic molecules remain in the film, even for long irradiation.…”

mentioning

confidence: 99%

Nanoscale Ferromagnetic Cobalt‐Doped ZnO Structures Formed by Deep‐UV Direct‐Patterning

Yeh

Colis

Fioux

et al. 2017

Adv Materials Inter

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COMMUNICATION (1 of 8)structures patterned by holographic dissolution technique. [1] Photopatterned metal oxide structures have shown excellent electrical, optical, and magnetic properties. [2][3][4][5][6] Compared to conventional lithography techniques, photopatterning technologies significantly simplify the process, avoiding in particular the etching step that is delicate on metal oxide and requires toxic chemicals and sophisticated setup. The feature line-width of photo patterned metal oxide structures is related to both photosensitivity of metal oxide precursor and the wavelength of light source. Submicroor nanoscale dimensions can be achieved with the use of high photosensitive metal oxide precursors and short wavelengths light sources such as deep-UV (DUV) (193 nm) and extreme UV (13.5 nm), making photopatterning a promising technology for fabricating micro or even nanoscale devices. [7][8][9][10] Moreover, photopatterning can be applied to obtain multielement metal oxide materials by mixing photosensitive precursor in conditions that control their dispersion at the atomic scale. [11] In recent years, wide bandgap diluted magnetic semiconductors (DMSs) such as transition metal (TM)-doped ZnO and TM-doped TiO 2 are catching intense interest due to their expected potential applications in spin transistors, spin light emitting diodes, spin filters, sensors, and memories. [12][13][14][15][16][17][18] By using photopatterning techniques, TM-doped metal oxide structures can be easily integrated in complex systems. In previous studies, Chen et al. have used photosensitive precursors and UV light to fabricate Co-doped ZnO and Co-doped TiO 2 patterns. [19,20] However, these DMS structures are in microscale dimensions (>100 µm), which cannot be integrated into small-dimension devices. In addition, the effect of photopatterning on the magnetic properties of the TM-doped metal oxides was not investigated. In the present work, we used DUV (193 nm) lithography and photosensitive zinc methacrylate (ZnMAA) precursor doped with cobalt (II) acetate to fabricate Co:ZnO films. At first, the effect of DUV-patterning as well as thermal annealing on the magnetic properties of Co:ZnO films derived from Co-doped ZnMAA precursor was investigated. Then, DUV nano patterning of the photosensitive solutions was demonstrated.In a previous study, zinc methacrylate was used to prepare ZnMAA resist with photosensitivity to DUV light of 193 nm. [21] Cobalt (II) acetate is mixed with zinc methacrylate (ZnMAA) to form a photopatternable Co-doped zinc oxide precursor. By using deep-UV (DUV) interference lithography, Co-doped ZnMAA precursor can be patterned as negative tone resist and transformed into ferromagnetic Co:ZnO films after thermal treatment. Moreover, Co:ZnO patterns as small as 300 nm line-width can be easily obtained. To have an in-depth understanding to the effect of DUVpatterning process as well as thermal annealing on Co:ZnO films derived from Co-doped ZnMAA precursor, optical, magnetic, and electrical characterizations are perf...

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Photon‐Pen Writing for Metal Oxide‐Based Versatile Nanosensors

Bae

Kim

Jang

et al. 2022

Adv Funct Materials

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Low‐temperature processes and simplification of lithographic techniques are key challenges for the fabrication of solution‐processed metal oxide‐based nanodevices. Recent breakthroughs in location‐specific synthetic methodologies involving inkjet printing and photon‐activation routes have enabled lithography‐free and bottom‐up fabrication of such devices. However, a revolutionary strategy to resolve room‐temperature direct fabrication of metal oxide‐based materials still remains elusive. Here, a pertinent route enabling wafer‐scale, location‐specific direct‐writing, termed “photon‐pen writing (PPW),” of functional metal oxide‐based devices is proposed. Using PPW, fabrication of elaborate patterns of metal oxides is demonstrated through location‐specific dechlorination and subsequent oxidation via thermal energy transfer of a focused infrared laser in ambient environment. By tailoring process parameters, precise manipulation of the chemical and structural features of the PPW‐produced metal‐oxide patterns are demonstrated. The versatility of the PPW process by realizing a highly sensitive, stable, uniform, and wafer‐scale nanosensor array for gas and light detection using PPW‐ZnO channel and PPW‐ITO electrodes is demonstrated, with 4.1% of response at 50 ppb NO2 and 2.93 ± 0.23 µA of photocurrent for 0.76 mW cm−2, 254 nm UV light. A new route toward wafer‐scale production of bespoke nanosensor arrays onto single chip for next‐generation nanoelectronics is introduced.

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Room-temperature preparation of metal-oxide nanostructures by DUV lithography from metal-oxo clusters

Cited by 55 publications

References 29 publications

Controllable Formation of Zinc Oxide Micro‐ and Nanostructures via DUV Direct Patterning

Controllable Formation of Zinc Oxide Micro‐ and Nanostructures via DUV Direct Patterning

Nanoscale Ferromagnetic Cobalt‐Doped ZnO Structures Formed by Deep‐UV Direct‐Patterning

Photon‐Pen Writing for Metal Oxide‐Based Versatile Nanosensors

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