Room-Temperature Quantum Confinement Effects in Transport Properties of Ultrathin Si Nanowire Field-Effect Transistors

Abstract

Quantum confinement of carriers has a substantial impact on nanoscale device operations. We present electrical transport analysis for lithographically fabricated sub-5 nm thick Si nanowire field-effect transistors and show that confinement-induced quantum oscillations prevail at 300 K. Our results discern the basis of recent observations of performance enhancement in ultrathin Si nanowire field-effect transistors and provide direct experimental evidence for theoretical predictions of enhanced carrier mobility in strongly confined nanowire devices.

Inherent Control of Growth, Morphology, and Defect Formation in Germanium Nanowires

“…[1][2][3][4][5][6][7][8][9] Germanium (Ge) is of particular interest for high speed nanoelectronic applications due to its low band gap energy (0.67 eV at room temperature) and high hole mobility (2000-4000 cm 2 V -1 s -1 ). 10 High quality Ge nanowires with narrow diameter distributions are commonly grown using solid growth promoters, e.g.…”

Manipulating the Growth Kinetics of Vapor–Liquid–Solid Propagated Ge Nanowires

“…[1][2][3][4][5][6][7][8][9] High aspect ratio (length vs. diameter) nanowires inherently allow integration of high density device architectures, based on the novel electronic, optical and mechanical properties of nanowires, over large length scales. [10][11] A popular route for growing high aspect ratio onedimensional (1D) nanostructures is to use a metallic growth promoter in a liquid state, typically gold, as a catalytic seed via a vapor-liquid-solid (VLS) mechanism.…”

InAs Nanowire Devices with Strong Gate Tunability: Fundamental Electron Transport Properties and Application Prospects: A Review

“…Such quantum confined 1D transport is difficult to be observed in other NW systems except in some rare cases (e.g. Ge/Si, Si NWs at very low temperature (T) [19,20] , Si NW with sub-5 nm diameter [21] ). The small m * also leads to a large Bohr radius for excitons (~34 nm) in InAs [22] , making it convenient to study the quantum confinement effect of excitons.…”