Room-Temperature Radiation Detectors Based on Large-Volume CdZnTe Single Crystals

Chaudhuri, Sandeep K.; Mandal, Krishna C.

doi:10.1007/978-3-030-76461-6_10

Cited by 7 publications

(2 citation statements)

References 55 publications

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“…Due to their higher material density, semiconductor detectors have much higher stopping power for penetrating gamma photons. Among semiconductor imaging detectors, a wide bandgap compound semiconductor CdZnTe (CZT), stands out because of its high atomic number (Z) constituents and roomtemperature operability [11]- [14]. Being a high-Z semiconductor, CZT stops gamma-rays much more effectively than conventional silicon or silicon carbide detectors [15], [16] and because of its wide bandgap (> 1.6 eV) CZT detectors can be operated at room-temperature and above unlike silicon or germanium x-/gamma-ray detectors.…”

Section: Introductionmentioning

confidence: 99%

Deep Learning-Based Classification of Gamma Photon Interaction in Room-Temperature Semiconductor Radiation Detectors

Chaudhuri,

Li,

Mandal

et al. 2024

IEEE Access

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Photon counting radiation detectors have become an integral part of medical imaging modalities such as Positron Emission Tomography or Computed Tomography. One of the most promising detectors is the wide bandgap room temperature semiconductor detectors, which depends on the interaction gamma/x-ray photons with the detector material involves Compton scattering which leads to multiple interaction photon events (MIPEs) of a single photon. For semiconductor detectors like CdZnTeSe (CZTS), which have a high overlap of detected energies between Compton and photoelectric events, it is nearly impossible to distinguish between Compton scattered events from photoelectric events using conventional readout electronics or signal processing algorithms. Herein, we report a deep learning classifier CoPhNet that distinguishes between Compton scattering and photoelectric interactions of gamma/x-ray photons with CdZnTeSe (CZTS) semiconductor detectors. Our CoPhNet model was trained using simulated data to resemble actual CZTS detector pulses and validated using both simulated and experimental data. These results demonstrated that our CoPhNet model can achieve high classification accuracy over the simulated test set. It also holds its performance robustness under operating parameter shifts such as Signal-Noise-Ratio (SNR) and incident energy. Our work thus show a positive direction for developing next-generation high energy gamma-rays detectors for better biomedical imaging.

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Section: Introductionmentioning

confidence: 99%

Deep Learning-Based Classification of Gamma Photon Interaction in Room-Temperature Semiconductor Radiation Detectors

Chaudhuri,

Li,

Mandal

et al. 2024

IEEE Access

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“…[ 2 ] Focusing on photon energy resolution, high‐sensitivity criteria in addition to the easiness of its use, the HPGe still provides one of the best results, despite the need for cryogenic operation. On the other hand, RT detection is still a major problem as the other known candidate materials exhibit a higher defect concentration [ 3 ] and/or are not easy to grow into large crystals unlike the case of HPGe crystals. In future, development of cryogenic cooling fridges for HPGe detectors will eliminate the currently used liquid nitrogen (LN 2 ) cryogenic installations.…”

Section: Introductionmentioning

confidence: 99%

Development of Large‐Diameter and Very High Purity Ge Crystal Growth Technology for Devices

Sumathi

Gybin

Gradwohl

et al. 2023

Cryst. Res. Technol.

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High‐purity germanium (HPGe) single crystals find their applications as radiation detectors especially for spectroscopy of high‐energy photons and particles in nuclear physics. Growing “detector‐grade” HPGe single crystals, with tailored structural defects and controlled impurity content, uniform throughout the crystal is a challenging task in this type of crystalline semiconductor material. All different process steps for HPGe, namely, i) reducing germanium dioxide powder into Ge metal; ii) zone refining of intrinsic source material (6 N) up to an ultrahigh purity (13 N); iii) Czochralski growth of high‐purity single crystals, are developed in house. A specific preparatory coating process for zone refining is entrenched as part of this work. Gallium, a dominant impurity usually found in HPGe, can be avoided. Using these advanced process know‐hows, a technology to grow volume Ge single crystals of large diameter (3 in.) with very high purity (net carrier concentration ≈ 5 × 1010 cm−3 or equivalent to 1 part per trillion level) is successfully developed. The zone‐refined Ge bars and the crystals show p‐type conductivity. Some crystals exhibit n‐type conductivity, and n–p or p–n transition is encountered in a single growth experiment. Besides the first results of encompassing very high‐purity crystals with uniform diameter, a controlled dislocation density (≈104 cm−2) can be realized.

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Investigation of Charge Transport Properties and the Role of Point Defects in CdZnTeSe Room Temperature Radiation Detectors

Chaudhuri

Nag

Kleppinger

et al. 2023

High-Z Materials for X-Ray Detection

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Room-Temperature Radiation Detectors Based on Large-Volume CdZnTe Single Crystals

Cited by 7 publications

References 55 publications

Deep Learning-Based Classification of Gamma Photon Interaction in Room-Temperature Semiconductor Radiation Detectors

Deep Learning-Based Classification of Gamma Photon Interaction in Room-Temperature Semiconductor Radiation Detectors

Development of Large‐Diameter and Very High Purity Ge Crystal Growth Technology for Devices

Investigation of Charge Transport Properties and the Role of Point Defects in CdZnTeSe Room Temperature Radiation Detectors

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