2019 IEEE Radiation Effects Data Workshop 2019
DOI: 10.1109/redw.2019.8906528
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Room Temperature Radiation Testing of a 500 °C Durable 4H-SiC JFET Integrated Circuit Technology

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Cited by 5 publications
(6 citation statements)
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“…Small feature size complementary metal oxide semiconductor (CMOS) processes have led to an increase in the TID of Si semiconductors and ICs to 10 MGy [21]. Wide bandgap (WBG) semiconducting materials have been shown to withstand TIDs similar to that of Si JFETs, with an increase of neutron fluence rating of 1-2 orders of magnitude [1,7,9,10,[22][23][24]. This pathway is has the highest costs for design time and prototyping because it starts from a foundation-ally low TRL.…”
Section: Pathways To Rad-hard Electronic Systemsmentioning
confidence: 99%
“…Small feature size complementary metal oxide semiconductor (CMOS) processes have led to an increase in the TID of Si semiconductors and ICs to 10 MGy [21]. Wide bandgap (WBG) semiconducting materials have been shown to withstand TIDs similar to that of Si JFETs, with an increase of neutron fluence rating of 1-2 orders of magnitude [1,7,9,10,[22][23][24]. This pathway is has the highest costs for design time and prototyping because it starts from a foundation-ally low TRL.…”
Section: Pathways To Rad-hard Electronic Systemsmentioning
confidence: 99%
“…The effects of the collision cascade density on radiation damage in SiC remain poorly understood. [93][94][95][96][97][98][99][100][101][102][103][104][105][106][107][108][109] The damage buildup and defect interaction dynamics in 3C-SiC bombarded at 100 °C with either continuous or pulsed beams of 500 keV Ne, Ar, Kr, or Xe ions led to the conclusion that bombardment with heavier ions, which create denser collision cascades, results in a decrease in the dynamic annealing efficiency and an increase in both the amorphization crosssection constant and the time constant of dynamic annealing. [42][43][44][45] The cascade density behavior of these parameters is non-linear and appears to be uncorrelated.…”
Section: Total Dose and Single Event Upsetmentioning
confidence: 99%
“…Heavy ion data has been used to determine the threshold energy for SEB under biased operation of the devices. 63,[80][81][82][83][84][85][86][87][88][89][90][91][92][93][94][95][96][97][98] This requires 3-D TCAD modelling and heavy ion simulations to estimate the sensitive volume and identify range/energy particles necessary for initiating SEB. Simulations using the radiation transport tool Monte Carlo radiative energy deposition (MRED) have been used to identify secondary particles from neutron-induced nuclear reactions in SiC which deposit energy exceeding threshold energy criterion in the sensitive volume.…”
Section: Total Dose and Single Event Upsetmentioning
confidence: 99%
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