Room-temperature scanning photoluminescence for mapping the lifetime and the doping density in compound semiconductors

Krawczyk, Stanisław; Nuban, M.F.

doi:10.1016/0921-5107(94)90104-x

Cited by 11 publications

(6 citation statements)

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“…6 The quadratic behavior was explained as being due to bipolar recombination via photogenerated electron and hole densities of states. A superposition of linear and quadratic dependence on laser intensity of spectrally integrated dc PL emission in layered semiconductors ͑InP/InGaAs/InP͒ has been reported by Nuban et al 7,8 Given the effective recombination lifetime…”

mentioning

confidence: 81%

“…5,7,8 In that limit, band-to-defect recombination may be dominated by the N ϫ P product of electron-hole density recombination, and a different mechanism for quadratic PL dependence on photocarrier density may have to be considered, as proposed by Guidotti et al 5 and Nuban et al 7,8 and discussed in the context of Eq. 1.…”

Section: H991mentioning

confidence: 97%

“…For both samples, the three-orders-of-magnitude higher intensities and shorter optical absorption depth at 523 nm are associated with increased nonlinearity exponents which tend to values closer to 2, a limiting value for electron-hole band-to-band bipolar recombination. 5,7,8 In that limit, band-to-defect recombination may be dominated by the N ϫ P product of electron-hole density recombination, and a different mechanism for quadratic PL dependence on photocarrier density may have to be considered, as proposed by Guidotti et al 5 and Nuban et al 7,8 and discussed in the context of Eq. 1.…”

Section: H990mentioning

confidence: 99%

“…͑W/m 2 ͒ 6.3 ϫ 107 6.3 ϫ 10 7 6.3 ϫ 10 7 6.3 ϫ 10 7 ⌬N ͑1/cm 3 ͒ 5.9 ϫ 10 20 3 ϫ 1019 5.5 ϫ 10 18 1.6 ϫ 10 18 of The Electrochemical Society, 154 ͑11͒ H983-H994 ͑2007͒ H990…”

mentioning

confidence: 99%

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Nonlinear Dependence of Photocarrier Radiometry Signals from p-Si Wafers on Optical Excitation Intensity

Tolev

Mandelis

Pawlak

2007

J. Electrochem. Soc.

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The dependence of the photocarrier radiometric ͑PCR͒ signal on the intensity of exciting superbandgap laser radiation was investigated. It was shown that the amplitude of the PCR signal exhibits a supralinear dependence on laser intensity I 0 ␤ , with nonlinearity coefficient/exponent ␤ such that 1 Յ ␤ Յ 2. The power dependence of the amplitude is an important indicator of the photoexcited carrier recombination physics in semiconductors ranging between monopolar ͑␤ = 1͒ and bipolar ͑␤ = 2͒ limits. The study was made with laser beams of varying wavelength, power, and spotsize and with semiconductor silicon wafers with different transport parameters, especially recombination lifetime. One-dimensional and three-dimensional models of the nonlinear PCR signal dependence on ␤ vs modulation frequency were developed. It was found that the conventional linear approach using ␤ = 1 is not always consistent with experimental slopes of amplitude vs power and it may yield erroneous values of the electronic transport properties. Consideration of the fundamental and second harmonic amplitudes and phases of the PCR signal showed that the physical origin of the nonlinear dependence of the PCR amplitude on laser intensity is consistent with high-optical-injection of free-carriers in the semiconductor. The value of ␤ can also be determined by the second harmonic-to-fundamental-amplitude ratio and is controlled by the carrier relaxation time dependence on the optically injected excess diffusive photocarrier density wave.Among the physical parameters of semiconductors, the electronic transport properties, namely, carrier recombination lifetime , carrier diffusion coefficient D, and front-and rear-surface recombination velocity S 1 and S 2 , have attracted great attention in semiconductor device manufacturing. Evaluation of these parameters is essential for characterizing semiconductor wafers, for defect and contamination monitoring, and for device modeling. 1 The technique of laserinduced infrared photocarrier radiometry ͑PCR͒ is an optoelectronic carrier density-wave diagnostic method for noncontact characterization of the electronic transport properties of semiconductors. This technique is a form of quantitative dynamic photoluminescence; it relies on the detection of modulated diffuse radiative emissions from semiconductors obeying Kirchhoff's law under conditions of nearthermodynamic equilibrium of an electronic solid when the latter is optically excited by intensity-modulated laser radiation with photon energy greater than the fundamental energy gap of the material. To determine the transport properties, both amplitude and phase of the PCR signal are simultaneously recorded as functions of angular modulation frequency ͑ = 2f͒ over several orders of magnitude and then fitted to suitable theoretical models ͓either one dimensional ͑1D͒ or three dimensional ͑3D͔͒ via a multiparameter fitting procedure. 2,3 To date, PCR has been developed as a linear technique, in the sense that the amplitude of the signal depends linearly on laser po...

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mentioning

confidence: 81%

Section: H991mentioning

confidence: 97%

Section: H990mentioning

confidence: 99%

mentioning

confidence: 99%

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Nonlinear Dependence of Photocarrier Radiometry Signals from p-Si Wafers on Optical Excitation Intensity

Tolev

Mandelis

Pawlak

2007

J. Electrochem. Soc.

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“…The room temperature (RT) PL used in this work permits evaluation of the minority carrier lifetime of carbonand zinc-doped InGaAs samples. The technique is based on PL measurements performed at different excitation levels [2][3][4][5]. The measured data, plotted as a function of excitation, are then fitted to a simple theoretical model of the PL emission by considering the linear and quadratic regime of this dependence in order to extract the minority carrier lifetime.…”

Section: Introductionmentioning

confidence: 99%

Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors

Cui¹,

Hubbard²,

Pavlidis³

et al. 2002

Semicond. Sci. Technol.

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The impact of doping and metalorganic chemical vapour deposition growth conditions on the minority carrier lifetime of zinc-and carbon-doped InGaAs is reported. Room temperature photoluminescence measurements have been employed to obtain direct information on the non-radiative lifetime of the materials. Low growth temperature and low V/III ratio lead to the lower carrier lifetime of the carbon-doped InGaAs samples. InP/InGaAs heterostructure bipolar transistors were grown and fabricated using both zinc-and carbon-doped InGaAs layers as the base regions. The current gain values measured for these devices agree well with the values calculated from the carrier lifetime and mobility/diffusion coefficient measurements.

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Semiconductors, Scanning Photoluminescence Evaluation of

Krawczyk

2001

Encyclopedia of Materials: Science and Technology

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Room-temperature scanning photoluminescence for mapping the lifetime and the doping density in compound semiconductors

Cited by 11 publications

References 10 publications

Nonlinear Dependence of Photocarrier Radiometry Signals from p-Si Wafers on Optical Excitation Intensity

Nonlinear Dependence of Photocarrier Radiometry Signals from p-Si Wafers on Optical Excitation Intensity

Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors

Semiconductors, Scanning Photoluminescence Evaluation of

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