Room-Temperature-Sputtered Nanocrystalline Nickel Oxide as Hole Transport Layer for p–i–n Perovskite Solar Cells

Aydın, Erkan; Troughton, Joel; Bastiani, Michele De; Ugur, Esma; Sajjad, Muhammad; Alzahrani, Areej; Neophytou, Marios; Schwingenschlögl, Udo; Laquai, Frédéric; Baran, Derya; Wolf, Stefaan De

doi:10.1021/acsaem.8b01263

Cited by 106 publications

(98 citation statements)

References 52 publications

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“…The VBM of ZnO (7.6 eV) is sufficient to block holes from the MAPbI 3 layer. The X‐ray diffraction (XRD) pattern of MAPbI 3 (Figure S1, Supporting Information) shows an intense signal corresponding to the perovskite alpha phase without secondary phases or PbI 2 traces, confirming the presence of well‐crystallized films which are matching well with the crystalline structure reported earlier …”

Section: Resultssupporting

confidence: 82%

“…Opaque devices were measured without an aperture. For semitransparent device fabrication, the NiO x layer was deposited on precleaned ITO substrates via RF magnetron sputtering with high uniformity as defined in the previous study . All the subsequent layer deposition keeps the same recipe as the opaque devices, an ultrathin layer of DPO was spin‐coated at 5000 rpm for 30 s from a 1 mg mL −1 solution in isopropanol.…”

Section: Methodsmentioning

confidence: 99%

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Triarylphosphine Oxide as Cathode Interfacial Material for Inverted Perovskite Solar Cells

Wang

Neophytou

Aydın

et al. 2019

Adv Materials Inter

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Metal halide perovskite solar cells (PSCs) in the inverted planar p‐i‐n configuration often employ phenyl‐C61‐butyric acid methyl ester (PC61BM) as electron transport layer, onto which Ag is deposited as outer electrode. However, the energy offset between PC61BM and Ag imposes an energy barrier for electron extraction. In this work, to improve the contact quality of this stack, a small organic molecule (2‐(1,10‐phenanthrolin‐3‐yl)naphth‐6‐yl)diphenylphosphine oxide (DPO) as a cathode interfacial material (CIM), inserted between PC61BM and Ag, is introduced. In devices with the indium tin oxide (ITO)/NiOx/methylammonium lead iodide (MAPbI3)/PC61BM/CIM/Ag configuration, it is found that this results in fill factor (FF) and short‐circuit current density values (JSC) that are up to ≈34% and ≈1 mA cm−2 higher, respectively, compared to DPO‐free devices. Inserting additional thin ZnO nanoparticle layers further improves the contact quality, leading to a power conversion efficiency of 18.2%. Semitransparent PSCs, utilizing DPO as an interlayer buffer layer are also realised. Resultant devices exhibit improved performance compared to DPO‐free devices. This proves that DPO withstands the sputtering of ITO, and may thus find application in perovskite‐based tandem devices. It is concluded that DPO acts as an excellent cathode modifier, opening new device‐engineering opportunities for p‐i‐n PSCs, especially in their semitransparent implementation.

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Section: Resultssupporting

confidence: 82%

Section: Methodsmentioning

confidence: 99%

Triarylphosphine Oxide as Cathode Interfacial Material for Inverted Perovskite Solar Cells

Wang

Neophytou

Aydın

et al. 2019

Adv Materials Inter

Self Cite

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“…is convenient to produce all sorts of large area uniform thin films (semiconductor (Aydin et al, 2018;Guo et al, 2018;Silva Filho et al, 2018) and alloy (Huang et al, 2015)) in industry and effective to control the morphology and crystallinity of film via sputter process, and which could be perfectly applied in thin ETL films preparation for large size PSMs.…”

Section: H O D S D U E T O I T S S O P H I S T I C a T E D A P P L I mentioning

confidence: 99%

High performance perovskite sub-module with sputtered SnO2 electron transport layer

Bai

et al. 2019

Solar Energy

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Hybrid perovskite solar cells (PSC) have gained stupendous achievement in single/tandem solar cell, semitransparent solar cell and flexible devices. Aiming for potential commercialization of perovskite photovoltaic technology, up scalable processing is crucial for all function layers in PSC. Herein we present a study on room temperature magnetron sputtering of tin oxide electron transporting layer (ETL) and apply it in a large area PSC for low cost and continues manufacturing. The SnO2 sputtering targets with varied oxygen and deposition models are used. Specifically, the working gas ratio of Ar/O2 during the radio frequency sputtering process plays a crucial role to obtain optimized SnO2 film. The sputtered SnO2 films demonstrate similar morphological and crystalline properties, but significant varied defect states and carrier transportation roles in the PSC devices. With further modification of thickness of SnO2, the PSCs based on sputtered SnO2 ETL shows a champion efficiency of 18.20% in small area and an efficiency of 14.71% in sub-module with an aperture area of 16.07 cm 2 , which is the highest efficiency of perovskite sub module with sputtered ETLs.

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“…Moreover, it is also effective for obtaining a better contact between the substrate and the semiconducting film. This compact layer of a nanometer size can be deposited by means of different techniques such as Atomic Layer Deposition (ALD) [46,47], spray-pyrolysis (SP) [48], sol-gel approach (SG) [49], sputtering [50], among others. In the present case, we chose electrodeposition, which is an industrially attractive route due to having low costs and a scale-up capability [51].…”

Section: Introductionmentioning

confidence: 99%

Electrochemically Deposited NiO Films as a Blocking Layer in p-Type Dye-Sensitized Solar Cells with an Impressive 45% Fill Factor

et al. 2020

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The enhancement of photoelectrochemical conversion efficiency of p-type dye-sensitized solar cells (p-DSSCs) is necessary to build up effective tandem devices in which both anode and cathode are photoactive. The efficiency of a p-type device (2.5%) is roughly one order of magnitude lower than the n-type counterparts (13.1%), thus limiting the overall efficiency of the tandem cell, especially in terms of powered current density. This is mainly due to the recombination reaction that occurs especially at the photocathode (or Indium-doped Tin Oxide (ITO))/electrolyte interface. To minimize this phenomenon, a widely employed strategy is to deposit a compact film of NiO (acting as a blocking electrode) beneath the porous electrode. Here, we propose electrodeposition as a cheap, easy scalable and environmental-friendly approach to deposit nanometric films directly on ITO glass. The results are compared to a blocking layer made by means of sol-gel technique. Cells embodying a blocking layer substantially outperformed the reference device. Among them, BL_1.10V shows the best photoconversion efficiency (0.166%) and one of the highest values of fill factor (approaching 46%) ever reported. This is mainly due to an optimized surface roughness of the blocking layer assuring a good deposition of the porous layer. The effectiveness of the implementation of the blocking layer is further proved by means of Electrochemical Impedance Spectroscopy.

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Room-Temperature-Sputtered Nanocrystalline Nickel Oxide as Hole Transport Layer for p–i–n Perovskite Solar Cells

Cited by 106 publications

References 52 publications

Triarylphosphine Oxide as Cathode Interfacial Material for Inverted Perovskite Solar Cells

Triarylphosphine Oxide as Cathode Interfacial Material for Inverted Perovskite Solar Cells

High performance perovskite sub-module with sputtered SnO2 electron transport layer

Electrochemically Deposited NiO Films as a Blocking Layer in p-Type Dye-Sensitized Solar Cells with an Impressive 45% Fill Factor

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