Room-temperature tensile creep of a PZT wafer in short and open-circuit conditions

Lee, Chang-Hoan; Lee, Sooil; Kim, Sang-Joo

doi:10.2109/jcersj2.116.158

Cited by 6 publications

(3 citation statements)

References 9 publications

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“…The materials were melted at 10501150°C for 5 h and then slowly cooled down to 950 1050°C in air. The crystal was dark blue in color with the size of 2 © 2 © 2 mm 3 . The annealing at 1100°C for 5 h in air changed colors of the crystals from dark blue to white for KNN and to brown for Mn-KNN.…”

Section: Methodsmentioning

confidence: 99%

Effect of Mn doping on the leakage current and polarization properties in K0.14Na0.86NbO3 ferroelectric single crystals

Noguchi

Miyayama

2010

J. Ceram. Soc. Japan

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Single crystals of K 0.14 Na 0.86 NbO 3 (KNN) and Mn-substituted KNN (Mn-KNN, K 0.14 Na 0.86 Mn 0.005 Nb 0.995 O y ) were grown by a flux method, and the effects of Mn substitution on the leakage current, polarization and dielectric properties were investigated along [100] cubic . As-grown and annealed (850°C in air) crystals did not show an apparent polarization hysteresis loop due to its large leakage current density (³10 ¹3 A/cm 2 ). The annealing at 1100°C in air led to a marked decrease in leakage current density of the order of ³10 ¹6 A/cm 2 for KNN crystals. Mn-KNN crystals annealed at 1100°C in air exhibited a low leakage current density of ³10 ¹8 A/cm 2 . Electron spin resonance measurements and defect chemistry analysis show that the average valence increase of Mn by oxidation treatment (the annealing in air) absorbs electron hole, the carrier of the leakage current, which is suggested to be the origin of the low leakage current observed for Mn-KNN crystals.

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Section: Methodsmentioning

confidence: 99%

Effect of Mn doping on the leakage current and polarization properties in K0.14Na0.86NbO3 ferroelectric single crystals

Noguchi

Miyayama

2010

J. Ceram. Soc. Japan

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“…[1][2][3] Recently, Kim 4) proposed a thermo-electromechanical continuum free energy model based on the evolutions of phase fractions during domain switching to predict an electric field-induced phase transition behavior of the materials near the Curie temperature. Then his model was modified to integrate a so-called normally distributed Gibbs free energy 5) to predict the tensile creep behavior of a poled PZT wafer at room temperature reported by Lee et al 6) However, in order to complete the free energy model of normal distribution, more experimental observations on the time-dependent behavior of the materials under various types of thermo-electro-mechanical loadings should be collected, understood in terms of domain switching, and compared with model predictions. Besides, understanding high temperature behavior of ferroelectric ceramics is also important in the design of piezoelectric actuators that are subjected to temperature changes due to an ambient temperature variation as well as the generation of heat by inner dissipation of the functional materials.…”

Section: Introductionmentioning

confidence: 99%

Time-Dependent Behavior of a Lead Titanate Zirconate Wafer under Constant Electric Fields at High Temperatures

Kim¹,

Lee²,

Lee³

et al. 2009

Jpn. J. Appl. Phys.

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A general ray-trace method for calculating the effects of radiative transfer in a control volume (CV) fluid code is presented. The method makes use of the structured CV grid of the fluid code, and is suited for geometries with a point or axis of symmetry. In particular, the specific equations for spherical and cylindrical (without z dependence) configurations are developed. The application of this method to local thermal equilibrium (LTE) and non-LTE plasma models is discussed. Various opportunities for sacrificing precision for calculation speed are pointed out.As a case study, the effects of radiative transfer in a sulphur lamp are calculated. Since an LTE description of the molecular radiation yields a computed spectrum that differs significantly from a measured one, the possibility of a non-LTE vibrational distribution of the radiating S 2 -B state is investigated. The results indicate that the vibrational populations may be inversed.

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“…Guillon et al (2004) measured tensile behavior of PZT in short and open-circuit conditions and discussed about the differences between material responses in both types of electrical boundary conditions. Recently, Lee et al (2008) made tensile creep experiments on a PZT wafer poled in thickness direction and measured longitudinal strain and electric displacement in short and open-circuit conditions. They proposed power law equations for creep strain and electric displacement, which are similar to those of .…”

Section: Introductionmentioning

confidence: 99%

Creep behavior of a poled PZT wafer under longitudinal tensile stress and through thickness electric field

Kim¹,

Lee²

2009

International Journal of Solids and Structures

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a b s t r a c tA commercially available soft PZT wafer that is poled in thickness direction is subjected to three different sets of loading environment, and variations of electric displacement in thickness direction and longitudinal/transverse strains are measured over time. Pure tensile stress creep experiments are made in short and open-circuit conditions. Different material responses in the two electrical boundary conditions are explained by the effects of piezoelectrically produced internal electric field on linear material moduli and domain switching mechanisms. The material responses under pure antiparallel electric field load and combined load are compared with each other and the differences are explained by the opposite effects of longitudinal tensile stress on 90°domain switching.

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Room-temperature tensile creep of a PZT wafer in short and open-circuit conditions

Cited by 6 publications

References 9 publications

Effect of Mn doping on the leakage current and polarization properties in K<sub>0.14</sub>Na<sub>0.86</sub>NbO<sub>3</sub> ferroelectric single crystals

Effect of Mn doping on the leakage current and polarization properties in K<sub>0.14</sub>Na<sub>0.86</sub>NbO<sub>3</sub> ferroelectric single crystals

Time-Dependent Behavior of a Lead Titanate Zirconate Wafer under Constant Electric Fields at High Temperatures

Creep behavior of a poled PZT wafer under longitudinal tensile stress and through thickness electric field

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